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cell switching

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High cell density complementary MOSFET HUASHUO HSM4614 offering fast switching and power efficiency Manufactures
High cell density complementary MOSFET HUASHUO HSM4614 offering fast switching and power efficiency
Model Number: HSM4614 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 7A;6A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 18mΩ@10V,5A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density Trench N Channel MOSFET HUASHUO HSD6016 Designed for Industrial Switching Solutions Manufactures
High Cell Density Trench N Channel MOSFET HUASHUO HSD6016 Designed for Industrial Switching Solutions
Model Number: HSD6016 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 47A Operating Temperature -: -55℃~+150℃
RDS(on): 12mΩ@10V,47A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trenched MOSFET HUASHUO HSBB3303 optimized for fast switching and power conversion Manufactures
High cell density trenched MOSFET HUASHUO HSBB3303 optimized for fast switching and power conversion
Model Number: HSBB3303 Configuration: -
Drain to Source Voltage: 30V Current - Continuous Drain(Id): 35A
RDS(on): 23mΩ@10V Operating Temperature -: -55℃~+150℃
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
fast switching N channel MOSFET HUASHUO HSU90N02 with super low gate charge and high cell density design Manufactures
fast switching N channel MOSFET HUASHUO HSU90N02 with super low gate charge and high cell density design
Model Number: HSU90N02 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 90A Operating Temperature -: -55℃~+175℃
RDS(on): 2.7mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power switching device HUASHUO HSP60N06 N channel MOSFET with trench technology and low gate charge Manufactures
Power switching device HUASHUO HSP60N06 N channel MOSFET with trench technology and low gate charge
Model Number: HSP60N06 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 60A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 12mΩ@10V,30A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET HUASHUO HSH6040 Featuring Trench Technology and Low Gate Charge for Power Switching Manufactures
N Channel MOSFET HUASHUO HSH6040 Featuring Trench Technology and Low Gate Charge for Power Switching
Model Number: HSH6040 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 140A Operating Temperature -: -55℃~+150℃
RDS(on): 5.2mΩ@10V,18A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low gate charge P channel MOSFET HUASHUO HSCB2307 designed for fast switching and power conversion Manufactures
Low gate charge P channel MOSFET HUASHUO HSCB2307 designed for fast switching and power conversion
Model Number: HSCB2307 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 8A Operating Temperature -: -55℃~+150℃
RDS(on): 18mΩ@4.5V,8A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density N Channel MOSFET HUASHUO HSU30N02 Designed for Power Management and Fast Switching Manufactures
High Cell Density N Channel MOSFET HUASHUO HSU30N02 Designed for Power Management and Fast Switching
Model Number: HSU30N02 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 30A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 8mΩ@4.5V,30A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching N Channel MOSFET HUASHUO HSU3004 Featuring Low RDS ON and High Cell Density Technology Manufactures
Fast Switching N Channel MOSFET HUASHUO HSU3004 Featuring Low RDS ON and High Cell Density Technology
Model Number: HSU3004 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 55A Operating Temperature -: -55℃~+175℃
RDS(on): 8.5mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
60V P channel MOSFET HUASHUO HSP6117 featuring low gate charge and trench technology for switching Manufactures
60V P channel MOSFET HUASHUO HSP6117 featuring low gate charge and trench technology for switching
Model Number: HSP6117 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 80A Operating Temperature -: -55℃~+150℃
RDS(on): 14mΩ@4.5V,12A Gate Threshold Voltage (Vgs(th)): -
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
80V P channel MOSFET HUASHUO HSU8119 fast switching with high cell density trench technology and RoHS compliance Manufactures
80V P channel MOSFET HUASHUO HSU8119 fast switching with high cell density trench technology and RoHS compliance
Model Number: HSU8119 Drain to Source Voltage: 80V
Current - Continuous Drain(Id): 70A Operating Temperature -: -55℃~+150℃
RDS(on): 17mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.8V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power switching N-channel MOSFET HUASHUO HSX120N20 featuring low RDS ON and high current capability Manufactures
Power switching N-channel MOSFET HUASHUO HSX120N20 featuring low RDS ON and high current capability
Model Number: HSX120N20 Drain to Source Voltage: 200V
Current - Continuous Drain(Id): 120A RDS(on): 11mΩ@10V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 4.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Synchronous buck converter MOSFET HUASHUO HSBB70N02 high cell density N channel device for switching Manufactures
Synchronous buck converter MOSFET HUASHUO HSBB70N02 high cell density N channel device for switching
Model Number: HSBB70N02 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 70A RDS(on): 3.8mΩ@4.5V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density Trenched P Channel MOSFET HUASHUO HSU6113 Suitable for Switching Applications Manufactures
High Cell Density Trenched P Channel MOSFET HUASHUO HSU6113 Suitable for Switching Applications
Model Number: HSU6113 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 13A Operating Temperature -: -55℃~+150℃
RDS(on): 132mΩ@4.5V,5A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Management MOSFETs HSBA0903 Featuring N Channel and P Channel Fast Switching Capabilities Manufactures
Power Management MOSFETs HSBA0903 Featuring N Channel and P Channel Fast Switching Capabilities
Model Number: HSBA0903 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 8A;6.2A Operating Temperature -: -55℃~+150℃
RDS(on): 200mΩ@4.5V,1.6A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching N channel MOSFET HSH18N20 Featuring Low RDS ON and High Cell Density Trench Technology Manufactures
Fast Switching N channel MOSFET HSH18N20 Featuring Low RDS ON and High Cell Density Trench Technology
Model Number: HSH18N20 Drain to Source Voltage: 200V
Current - Continuous Drain(Id): 18A Operating Temperature -: -55℃~+150℃
RDS(on): 170mΩ@10V,9A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low gate charge N Channel MOSFET HUASHUO HSBL020N08 with excellent RDS ON and switching performance Manufactures
Low gate charge N Channel MOSFET HUASHUO HSBL020N08 with excellent RDS ON and switching performance
Model Number: HSBL020N08 Drain to Source Voltage: 80V
Current - Continuous Drain(Id): 240A Operating Temperature -: -55℃~+150℃
RDS(on): 2mΩ@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
30V Fast Switching P Channel MOSFET HUASHUO HSH3119 with Superior RDS ON and Gate Charge Performance Manufactures
30V Fast Switching P Channel MOSFET HUASHUO HSH3119 with Superior RDS ON and Gate Charge Performance
Model Number: HSH3119 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 150A RDS(on): 3mΩ@10V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
60V P channel MOSFET HUASHUO HSP6115 featuring trench technology low gate charge and high cell density for power switching Manufactures
60V P channel MOSFET HUASHUO HSP6115 featuring trench technology low gate charge and high cell density for power switching
Model Number: HSP6115 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 45A Operating Temperature -: -55℃~+150℃
RDS(on): - Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
60V P channel MOSFET HUASHUO HSM6113 fast switching device with trench technology and low gate charge Manufactures
60V P channel MOSFET HUASHUO HSM6113 fast switching device with trench technology and low gate charge
Model Number: HSM6113 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 4.1A RDS(on): 90mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)): 2.5V Reverse Transfer Capacitance (Crss@Vds): 50pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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