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Cell Switching

cell switching

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Desktop Tensile Testing Equipment Double Column High Precision Load Cell Sensor Manufactures
Desktop Tensile Testing Equipment Double Column High Precision Load Cell Sensor
Brand Name: Kinte Certification: Certificate of conformity of quality management system certification
Model Number: WH-8812ES Minimum Order Quantity: 1 Set
Delivery Time: customized Payment Terms: L/C, T/T
Guangzhou Kinte Electric Industrial Co.,Ltd [Guangdong,China]
Active Member
N channel MOSFET GOODWORK 50N06 TO 252 with low gate charge and high cell density trench technology Manufactures
N channel MOSFET GOODWORK 50N06 TO 252 with low gate charge and high cell density trench technology
Model Number: 50N06(TO-252) Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 45A RDS(on): 11mΩ@10V,20A
Operating Temperature -: -55℃~+175℃ Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power conversion solution GOODWORK 20P06S P channel MOSFET with high cell density and low gate charge Manufactures
Power conversion solution GOODWORK 20P06S P channel MOSFET with high cell density and low gate charge
Model Number: 20P06S Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 18A RDS(on): 80mΩ@10V,8A
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density P channel MOSFET GOODWORK 9435 GK ideal for synchronous buck converter applications Manufactures
High cell density P channel MOSFET GOODWORK 9435 GK ideal for synchronous buck converter applications
Model Number: 9435-GK Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 5.3A Operating Temperature -: -55℃~+150℃
RDS(on): 36mΩ@10V,4.1A Gate Threshold Voltage (Vgs(th)): 1.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power MOSFET HUASHUO HSU6014 N Channel Device with High Cell Density Trench Technology and Low RDS Manufactures
Power MOSFET HUASHUO HSU6014 N Channel Device with High Cell Density Trench Technology and Low RDS
Model Number: HSU6014 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 20A Operating Temperature -: -55℃~+150℃
RDS(on): 40mΩ@10V,15A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trench N Channel MOSFET HUASHUO BSS138 Offering High Cell Density and Performance for Power Circuits Manufactures
Trench N Channel MOSFET HUASHUO BSS138 Offering High Cell Density and Performance for Power Circuits
Model Number: BSS138 Drain to Source Voltage: 50V
Current - Continuous Drain(Id): 230mA Operating Temperature -: -55℃~+150℃
RDS(on): 3.4Ω@10V,0.22A Gate Threshold Voltage (Vgs(th)): 1.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trenched n channel mosfet HUASHUO HSP6040 featuring high cell density and excellent cdv dt effect decline Manufactures
Trenched n channel mosfet HUASHUO HSP6040 featuring high cell density and excellent cdv dt effect decline
Model Number: HSP6040 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 140A Operating Temperature -: -55℃~+150℃
RDS(on): 5.2mΩ@10V,18A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trenched N channel MOSFET HUASHUO HSM4002 featuring low gate charge and high cell density technology Manufactures
Trenched N channel MOSFET HUASHUO HSM4002 featuring low gate charge and high cell density technology
Model Number: HSM4002 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 7.5A Operating Temperature -: -55℃~+150℃
RDS(on): 28mΩ@10V,5A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
40V P Channel MOSFET HUASHUO HSH4129 Featuring High Cell Density Trench Technology and Low Gate Charge Manufactures
40V P Channel MOSFET HUASHUO HSH4129 Featuring High Cell Density Trench Technology and Low Gate Charge
Model Number: HSH4129 Configuration: -
Drain to Source Voltage: 40V Current - Continuous Drain(Id): 180A
Operating Temperature -: -55℃~+150℃ RDS(on): 2.3mΩ@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trenched P channel MOSFET HUASHUO HSS2333 optimized for synchronous buck converter Manufactures
High cell density trenched P channel MOSFET HUASHUO HSS2333 optimized for synchronous buck converter
Model Number: HSS2333 Drain to Source Voltage: 12V
Current - Continuous Drain(Id): 8A Operating Temperature -: -55℃~+150℃
RDS(on): 18mΩ@4.5V,8A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trenched N channel MOSFET HSK5N04 ideal for synchronous buck converter applications Manufactures
High cell density trenched N channel MOSFET HSK5N04 ideal for synchronous buck converter applications
Model Number: HSK5N04 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 5A Operating Temperature -: -55℃~+150℃
RDS(on): 45mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
30V N channel MOSFET HUASHUO HSBA3004 with high cell density trench design and super low gate charge Manufactures
30V N channel MOSFET HUASHUO HSBA3004 with high cell density trench design and super low gate charge
Model Number: HSBA3004 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 58A Operating Temperature -: -55℃~+150℃
RDS(on): 8.5mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density N channel MOSFET HUASHUO HSBA8074A suitable for synchronous rectification circuits Manufactures
High cell density N channel MOSFET HUASHUO HSBA8074A suitable for synchronous rectification circuits
Model Number: HSBA8074A Drain to Source Voltage: 80V
Current - Continuous Drain(Id): 100A Operating Temperature -: -55℃~+150℃
RDS(on): 2.3mΩ@10V,20A Gate Threshold Voltage (Vgs(th)): 2.8V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
P channel MOSFET HUASHUO HSH4119 with high cell density trench technology and 100 percent EAS guaranteed Manufactures
P channel MOSFET HUASHUO HSH4119 with high cell density trench technology and 100 percent EAS guaranteed
Model Number: HSH4119 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 150A Operating Temperature -: -55℃~+150℃
RDS(on): 4.5mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density Trenched N Channel MOSFET HUASHUO HSH3024 for Synchronous Buck Converter Performance Manufactures
High Cell Density Trenched N Channel MOSFET HUASHUO HSH3024 for Synchronous Buck Converter Performance
Model Number: HSH3024 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 200A Operating Temperature -: -55℃~+150℃
RDS(on): 1.7mΩ@10V,30A Gate Threshold Voltage (Vgs(th)): 1.6V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N channel mosfet HUASHUO HSW2N15 with high cell density trench design providing switching and loss Manufactures
N channel mosfet HUASHUO HSW2N15 with high cell density trench design providing switching and loss
Model Number: HSW2N15 Drain to Source Voltage: 150V
Current - Continuous Drain(Id): 1.4A Operating Temperature -: -55℃~+150℃
RDS(on): 480mΩ@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power electronics MOSFET HUASHUO HSP8119 P channel with low gate charge and high cell density design Manufactures
Power electronics MOSFET HUASHUO HSP8119 P channel with low gate charge and high cell density design
Model Number: HSP8119 Drain to Source Voltage: 80V
Current - Continuous Drain(Id): 90A Operating Temperature -: -55℃~+150℃
RDS(on): 17mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
JHT3502 N-Channel Fast Switching MOSFET Trench Chip With SOT-23 Package for in 30V VDS Manufactures
JHT3502 N-Channel Fast Switching MOSFET Trench Chip With SOT-23 Package for in 30V VDS
Certification: ISO9001:2015, ISO14001:2015, IATF16949 Minimum Order Quantity: 3,000 Pieces
Delivery Time: Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays Payment Terms: LC, T/T, PayPal
Model NO.: JHT3502 Luminous Intensity: None Luminance
Jinan Jingheng Electronics Co., Ltd. [Shandong,China]
Verified Supplier
Fast Switching 30V Dual N-Channel MOSFETs JHS3202 YJS3404A for Speed and None Luminance Manufactures
Fast Switching 30V Dual N-Channel MOSFETs JHS3202 YJS3404A for Speed and None Luminance
Certification: ISO9001:2015, ISO14001:2015, IATF16949 Minimum Order Quantity: 3,000 Pieces
Delivery Time: Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays Payment Terms: LC, T/T, PayPal
Model NO.: JHS3202 Luminous Intensity: None Luminance
Jinan Jingheng Electronics Co., Ltd. [Shandong,China]
Verified Supplier
Silicon N-Channel 30V Fast Switching MOSFETs JHS3004 With SOP-8 Package for Industrial Manufactures
Silicon N-Channel 30V Fast Switching MOSFETs JHS3004 With SOP-8 Package for Industrial
Certification: ISO9001:2015, ISO14001:2015, IATF16949 Minimum Order Quantity: 3,000 Pieces
Delivery Time: Peak Season Lead Time: one month Off Season Lead Time: within 15 workdays Payment Terms: LC, T/T, PayPal
Model NO.: JHS3004 Luminous Intensity: None Luminance
Jinan Jingheng Electronics Co., Ltd. [Shandong,China]
Verified Supplier
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