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cell switching

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High cell density trench technology p channel mosfet huashuo hsce3031 optimized for power switching Manufactures
High cell density trench technology p channel mosfet huashuo hsce3031 optimized for power switching
Model Number: HSCE3031 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 50A RDS(on): 5.2mΩ@10V;7mΩ@4.5V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1.6V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET Trenched Technology RoHS Compliant HUASHUO HSBA8048 for Fast Switching Applications Manufactures
N Channel MOSFET Trenched Technology RoHS Compliant HUASHUO HSBA8048 for Fast Switching Applications
Model Number: HSBA8048 Drain to Source Voltage: 80V
Current - Continuous Drain(Id): 48A Operating Temperature -: -55℃~+150℃
RDS(on): 4.3mΩ@10V,20A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trenched N Channel MOSFET HUASHUO HSM6006 Featuring High Cell Density and Fast Switching Performance Manufactures
Trenched N Channel MOSFET HUASHUO HSM6006 Featuring High Cell Density and Fast Switching Performance
Model Number: HSM6006 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 6.3A Operating Temperature -: -55℃~+150℃
RDS(on): 18mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trench technology MOSFET HUASHUO HSM3202 dual N channel 30V fast switching device Manufactures
High cell density trench technology MOSFET HUASHUO HSM3202 dual N channel 30V fast switching device
Model Number: HSM3202 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 7.8A Operating Temperature -: -55℃~+150℃
RDS(on): 18mΩ@10V,7A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Management with HUASHUO HSU3016 N Channel Fast Switching MOSFET and Low Gate Charge Technology Manufactures
Power Management with HUASHUO HSU3016 N Channel Fast Switching MOSFET and Low Gate Charge Technology
Model Number: HSU3016 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 96A Operating Temperature -: -55℃~+175℃
RDS(on): 4mΩ@10V,30A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trench technology MOSFET HUASHUO HSM2202 dual N channel 20V fast switching device Manufactures
High cell density trench technology MOSFET HUASHUO HSM2202 dual N channel 20V fast switching device
Model Number: HSM2202 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 8A Operating Temperature -: -55℃~+150℃
RDS(on): 15mΩ@2.5V Gate Threshold Voltage (Vgs(th)): 1.2V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast switching MOSFET HUASHUO HSP0026 featuring high cell density trench technology and low conduction losses Manufactures
Fast switching MOSFET HUASHUO HSP0026 featuring high cell density trench technology and low conduction losses
Model Number: HSP0026 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 50A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 16mΩ@10V,9A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density Trenched N Channel MOSFET HUASHUO HSU3018B Designed for Fast Switching Applications Manufactures
High Cell Density Trenched N Channel MOSFET HUASHUO HSU3018B Designed for Fast Switching Applications
Model Number: HSU3018B Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 110A Operating Temperature -: -55℃~+150℃
RDS(on): 2.4mΩ@10V,30A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching P Channel MOSFET HUASHUO HSH30P15 with Low Gate Charge and High Cell Density Design Manufactures
Fast Switching P Channel MOSFET HUASHUO HSH30P15 with Low Gate Charge and High Cell Density Design
Model Number: HSH30P15 Drain to Source Voltage: 150V
Current - Continuous Drain(Id): 30A Operating Temperature -: -55℃~+150℃
RDS(on): 70mΩ@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density Trenched MOSFET HUASHUO HSBA4006 Offering Fast Switching and Low RDS ON for Power Electronics Manufactures
High Cell Density Trenched MOSFET HUASHUO HSBA4006 Offering Fast Switching and Low RDS ON for Power Electronics
Model Number: HSBA4006 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 60A Operating Temperature -: -55℃~+150℃
RDS(on): 7.5mΩ@10V,12A Gate Threshold Voltage (Vgs(th)): 1.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trench technology MOSFET HUASHUO HSBA6224 dual N channel 60V fast switching device Manufactures
High cell density trench technology MOSFET HUASHUO HSBA6224 dual N channel 60V fast switching device
Model Number: HSBA6224 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 50A RDS(on): 16mΩ@10V,12A
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
P channel MOSFET HUASHUO HSP110P04 featuring high cell density and low gate charge for fast switching Manufactures
P channel MOSFET HUASHUO HSP110P04 featuring high cell density and low gate charge for fast switching
Model Number: HSP110P04 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 110A RDS(on): -
Operating Temperature -: -55℃~+150℃@(Tj) Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switching N Channel MOSFET HSP6048 Featuring Trench Design and High Cell Density for Operation Manufactures
Power Switching N Channel MOSFET HSP6048 Featuring Trench Design and High Cell Density for Operation
Model Number: HSP6048 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 150A Operating Temperature -: -55℃~+150℃
RDS(on): 3.6mΩ@10V,20A Gate Threshold Voltage (Vgs(th)): 2.3V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trenched P channel MOSFET HUASHUO HSBA100P03 with RoHS compliance and superior switching performance Manufactures
Trenched P channel MOSFET HUASHUO HSBA100P03 with RoHS compliance and superior switching performance
Model Number: HSBA100P03 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 100A Operating Temperature -: -55℃~+150℃
RDS(on): 3.3mΩ@10V,30A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density Trench Technology MOSFET HUASHUO HSM9926 Dual N Channel 20V Fast Switching Device Manufactures
High Cell Density Trench Technology MOSFET HUASHUO HSM9926 Dual N Channel 20V Fast Switching Device
Model Number: HSM9926 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 6A Operating Temperature -: -55℃~+150℃
RDS(on): 28mΩ@4.5V,6A Gate Threshold Voltage (Vgs(th)): 600mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching N channel MOSFET HUASHUO HSBA6074 with 60V voltage rating and high cell density design Manufactures
Fast Switching N channel MOSFET HUASHUO HSBA6074 with 60V voltage rating and high cell density design
Model Number: HSBA6074 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 100A Operating Temperature -: -55℃~+150℃
RDS(on): 3.2mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 2.3V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching N Channel MOSFET HUASHUO HSY012N10 Featuring Low RDS ON and High Cell Density SGT MOS Manufactures
Fast Switching N Channel MOSFET HUASHUO HSY012N10 Featuring Low RDS ON and High Cell Density SGT MOS
Model Number: HSY012N10 Description: TOLL-8 Single FETs, MOSFETs RoHS
Mfr. Part #: HSY012N10 Package: TOLL-8
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trench Technology Based P Channel MOSFET HUASHUO IRLML6401 20V Fast Switching for Power Applications Manufactures
Trench Technology Based P Channel MOSFET HUASHUO IRLML6401 20V Fast Switching for Power Applications
Model Number: IRLML6401 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 4.9A Operating Temperature -: -55℃~+150℃
RDS(on): 45mΩ@4.5V,4.9A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
20V P channel MOSFET HUASHUO HSW3415 featuring trench technology low gate charge and fast switching for power supplies Manufactures
20V P channel MOSFET HUASHUO HSW3415 featuring trench technology low gate charge and fast switching for power supplies
Model Number: HSW3415 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 5A Operating Temperature -: -55℃~+150℃
RDS(on): 35mΩ@4.5V,5A Gate Threshold Voltage (Vgs(th)): 900mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trench technology p channel mosfet hsba6115 fast switching 60v for power conversion Manufactures
High cell density trench technology p channel mosfet hsba6115 fast switching 60v for power conversion
Model Number: HSBA6115 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 35A Operating Temperature -: -55℃~+150℃
RDS(on): 25mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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