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cell switching

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High Density Cell P Channel MOSFET ElecSuper FDS9435A ES Featuring Low Leakage Current and Operation Manufactures
High Density Cell P Channel MOSFET ElecSuper FDS9435A ES Featuring Low Leakage Current and Operation
Model Number: FDS9435A(ES) Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 5.8A RDS(on): 80mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 2V@250uA Type: P-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Density Cell Design P Channel MOSFET ElecSuper SI2307A ES with Low Gate Charge and Rugged Build Manufactures
High Density Cell Design P Channel MOSFET ElecSuper SI2307A ES with Low Gate Charge and Rugged Build
Model Number: SI2307A-ES Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 4.2A Operating Temperature -: -55℃~+150℃
RDS(on): 42mΩ@10V;49mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 800mV@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High density cell structure ElecSuper AO4435 MOSFET optimized for low RDS ON and avalanche rated performance Manufactures
High density cell structure ElecSuper AO4435 MOSFET optimized for low RDS ON and avalanche rated performance
Model Number: AO4435 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 10.5A Operating Temperature -: -55℃~+150℃
RDS(on): 13.5mΩ@10V;18.5mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High density cell design MOSFET ElecSuper ES3134KQ suitable for DC DC conversion and power switching Manufactures
High density cell design MOSFET ElecSuper ES3134KQ suitable for DC DC conversion and power switching
Model Number: ES3134KQ Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 880mA Operating Temperature -: -55℃~+150℃
RDS(on): 220mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 750mV@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
ElecSuper BSS84WQ 7 F ES P Channel MOSFET Offering Low RDS ON and High Density Cell Design for Power Manufactures
ElecSuper BSS84WQ 7 F ES P Channel MOSFET Offering Low RDS ON and High Density Cell Design for Power
Model Number: BSS84WQ-7-F(ES) Configuration: -
Drain to Source Voltage: 60V Current - Continuous Drain(Id): 180mA
RDS(on): 5.2Ω@10V Operating Temperature -: -55℃~+150℃
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High density cell N channel MOSFET ElecSuper AP180N03G ES for DC DC conversion and charging circuits Manufactures
High density cell N channel MOSFET ElecSuper AP180N03G ES for DC DC conversion and charging circuits
Model Number: AP180N03G-ES Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 123A RDS(on): 1.7mΩ@10V;2.6mΩ@4.5V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1.75V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
P Channel MOSFET ElecSuper IRLML9301TRPBF ES with High Density Cell Design and Low RDS ON Resistance Manufactures
P Channel MOSFET ElecSuper IRLML9301TRPBF ES with High Density Cell Design and Low RDS ON Resistance
Model Number: IRLML9301TRPBF(ES) Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 3.8A RDS(on): 46mΩ@10V;62mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 1.5V@250uA Type: P-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switching MOSFET ElecSuper AO4406AL N Channel with Low Gate Leakage and High Density Cell Design Manufactures
Power Switching MOSFET ElecSuper AO4406AL N Channel with Low Gate Leakage and High Density Cell Design
Model Number: AO4406AL Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 20A Operating Temperature -: -55℃~+150℃
RDS(on): 10mΩ@10V;17mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.6V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET ElecSuper SI2324A TP Offering Low RDS ON and High Density Cell Design for Switching Manufactures
N Channel MOSFET ElecSuper SI2324A TP Offering Low RDS ON and High Density Cell Design for Switching
Model Number: SI2324A-TP Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 2.6A Operating Temperature -: -55℃~+150℃
RDS(on): 90mΩ@10V;120mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.65V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density N Channel MOSFET FETek FKBA3052 Designed for Fast Switching and Loss Applications Manufactures
High Cell Density N Channel MOSFET FETek FKBA3052 Designed for Fast Switching and Loss Applications
Model Number: FKBA3052 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 52A RDS(on): 6.3mΩ@10V,20A
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power switching MOSFET ElecSuper NCE0106R-ES featuring rugged design and high density cell technology Manufactures
Power switching MOSFET ElecSuper NCE0106R-ES featuring rugged design and high density cell technology
Model Number: NCE0106R-ES Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 4A Operating Temperature -: -55℃~+150℃
RDS(on): 120mΩ@10V Gate Threshold Voltage (Vgs(th)): 1.7V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N channel MOSFET FETek FKBA3004 with high cell density trench technology and fast switching capability Manufactures
N channel MOSFET FETek FKBA3004 with high cell density trench technology and fast switching capability
Model Number: FKBA3004 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 58A Operating Temperature -: -55℃~+150℃
RDS(on): 8.5mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Load Switching N Channel MOSFET FUXINSEMI FS2312 with High Density Cell Design and Low On Resistance Manufactures
Load Switching N Channel MOSFET FUXINSEMI FS2312 with High Density Cell Design and Low On Resistance
Model Number: FS2312 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 6.8A RDS(on): 18mΩ@4.5V;22mΩ@2.5V;39mΩ@1.8V
Gate Threshold Voltage (Vgs(th)): 1V Reverse Transfer Capacitance (Crss@Vds): 75pF@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Plastic Encapsulated Mosfet Goodwork BSS123 With High Density Cell Design For Switching Applications Manufactures
Plastic Encapsulated Mosfet Goodwork BSS123 With High Density Cell Design For Switching Applications
Model Number: BSS123 Configuration: -
Drain to Source Voltage: 100V Current - Continuous Drain(Id): 170mA
Operating Temperature -: - RDS(on): 6Ω@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High density cell design transistor SI2302 with low RDS ON and high saturation current capability Manufactures
High density cell design transistor SI2302 with low RDS ON and high saturation current capability
Model Number: SI2302 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 4.3A RDS(on): 50mΩ@2.5V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1.1V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Density Cell N Channel Power MOSFET GOODWORK 65N06 Featuring High ESD Capability and Stability Manufactures
High Density Cell N Channel Power MOSFET GOODWORK 65N06 Featuring High ESD Capability and Stability
Model Number: 65N06 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 65A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 16mΩ@10V Gate Threshold Voltage (Vgs(th)): 3V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching P Channel MOSFET HUASHUO AO3415 Featuring 20V Rating and High Cell Density Trench Technology Manufactures
Fast Switching P Channel MOSFET HUASHUO AO3415 Featuring 20V Rating and High Cell Density Trench Technology
Model Number: AO3415 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 4.3A Operating Temperature -: -55℃~+150℃
RDS(on): 45mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 450mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trench n channel mosfet hsba3052 suitable for fast switching dc dc converter needs Manufactures
High cell density trench n channel mosfet hsba3052 suitable for fast switching dc dc converter needs
Model Number: HSBA3052 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 52A Operating Temperature -: -55℃~+150℃
RDS(on): 6.9mΩ@4.5V,15A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
P channel 40V MOSFET HUASHUO HSU4119 featuring super low gate charge and excellent switching performance Manufactures
P channel 40V MOSFET HUASHUO HSU4119 featuring super low gate charge and excellent switching performance
Model Number: HSU4119 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 120A Operating Temperature -: -55℃~+150℃
RDS(on): 3.5mΩ@10V;4.5mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
p channel mosfet HUASHUO HSM4435 designed for fast switching and high cell density trench technology Manufactures
p channel mosfet HUASHUO HSM4435 designed for fast switching and high cell density trench technology
Model Number: HSM4435 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 9.5A Operating Temperature -: -55℃~+150℃
RDS(on): 18mΩ@10V,6A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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