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Transistor Bipolar Bjt Single Configuration

transistor bipolar bjt single configuration

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Pb free silicon bipolar RF transistor Infineon BFP405H6327XTSA1 with 1.25 dB noise figure at 1.8 GHz Manufactures
Pb free silicon bipolar RF transistor Infineon BFP405H6327XTSA1 with 1.25 dB noise figure at 1.8 GHz
Model Number: BFP405H6327XTSA1 Current - Collector Cutoff: 100nA
Emitter-Base Voltage(Vebo): 1.5V Pd - Power Dissipation: 75mW
Transition frequency(fT): 25GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers Manufactures
Low noise silicon bipolar RF transistor Infineon BFR183E6327HTSA1 for high gain broadband amplifiers
Model Number: BFR183E6327HTSA1 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 450mW
Transition frequency(fT): 8GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain Manufactures
Low noise broadband amplifier silicon bipolar RF transistor Infineon BFR93AE6327HTSA1 with high gain
Model Number: BFR93AE6327HTSA1 Current - Collector Cutoff: 100nA
Pd - Power Dissipation: 300mW Transition frequency(fT): 6GHz
type: NPN Current - Collector(Ic): 90mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low noise silicon bipolar RF transistor Infineon BFR92PE6327 suitable for broadband amplifiers up to 2 GHz Manufactures
Low noise silicon bipolar RF transistor Infineon BFR92PE6327 suitable for broadband amplifiers up to 2 GHz
Model Number: BFR92PE6327 Emitter-Base Voltage(Vebo): 2.5V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 280mW
Transition frequency(fT): 5GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon bipolar RF transistor Infineon BFP 181 E7764 optimized for broadband low noise amplification Manufactures
Silicon bipolar RF transistor Infineon BFP 181 E7764 optimized for broadband low noise amplification
Model Number: BFP 181 E7764 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 175mW
Transition frequency(fT): 8GHz type: -
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low noise silicon bipolar RF transistor Infineon BFR193E6327HTSA1 suitable for high gain amplifiers up to 2 GHz Manufactures
Low noise silicon bipolar RF transistor Infineon BFR193E6327HTSA1 suitable for high gain amplifiers up to 2 GHz
Model Number: BFR193E6327HTSA1 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 580mW
Transition frequency(fT): 8GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon bipolar RF transistor Infineon BFP 193 E6327 featuring AEC Q101 qualification for broadband amplifier Manufactures
Silicon bipolar RF transistor Infineon BFP 193 E6327 featuring AEC Q101 qualification for broadband amplifier
Model Number: BFP 193 E6327 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 580mW
Transition frequency(fT): 8GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon bipolar RF transistor Infineon BFP193WH6327XTSA1 with 8 GHz transition frequency and low noise figure Manufactures
Silicon bipolar RF transistor Infineon BFP193WH6327XTSA1 with 8 GHz transition frequency and low noise figure
Model Number: BFP193WH6327XTSA1 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 580mW
Transition frequency(fT): 8GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear broadband amplifier performance Manufactures
Silicon bipolar RF transistor Infineon BFR193WH6327 optimized for linear broadband amplifier performance
Model Number: BFR193WH6327 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 580mW
Transition frequency(fT): 8GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low noise figure silicon bipolar RF transistor Infineon BFR182WH6327XTSA1 broadband amplifier device Manufactures
Low noise figure silicon bipolar RF transistor Infineon BFR182WH6327XTSA1 broadband amplifier device
Model Number: BFR182WH6327XTSA1 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 30nA Pd - Power Dissipation: 250mW
Transition frequency(fT): 8GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High gain low noise silicon bipolar RF transistor Infineon BFP540FESDH6327XTSA1 with ESD protection Manufactures
High gain low noise silicon bipolar RF transistor Infineon BFP540FESDH6327XTSA1 with ESD protection
Model Number: BFP540FESDH6327XTSA1 Emitter-Base Voltage(Vebo): 1V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 250mW
Transition frequency(fT): 30GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure Manufactures
High gain broadband amplifier transistor Infineon BFR182E6327 silicon bipolar with low noise figure
Model Number: BFR182E6327 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 250mW
Transition frequency(fT): 8GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High gain broadband amplifier transistor Infineon BFP183WH6327XTSA1 low noise silicon bipolar device Manufactures
High gain broadband amplifier transistor Infineon BFP183WH6327XTSA1 low noise silicon bipolar device
Model Number: BFP183WH6327XTSA1 Pd - Power Dissipation: 450mW
Transition frequency(fT): 8.5GHz type: NPN
Current - Collector(Ic): 65mA Collector - Emitter Voltage VCEO: 12V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low noise bipolar RF transistor Infineon BFP760H6327 silicon germanium type for RF device integration Manufactures
Low noise bipolar RF transistor Infineon BFP760H6327 silicon germanium type for RF device integration
Model Number: BFP760H6327 Emitter-Base Voltage(Vebo): 1.2V
Current - Collector Cutoff: 40nA Pd - Power Dissipation: 240mW
Transition frequency(fT): 45GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
SOT89 Package Power Amplification Transistor KUU SS8050 NPN Bipolar Suitable Electronic Applications Manufactures
SOT89 Package Power Amplification Transistor KUU SS8050 NPN Bipolar Suitable Electronic Applications
Model Number: SS8050 Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 500mW
Transition frequency(fT): 100MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
NPN bipolar transistor JUXING BC817-25 designed for general AF applications featuring low saturation voltage Manufactures
NPN bipolar transistor JUXING BC817-25 designed for general AF applications featuring low saturation voltage
Model Number: BC817-25 Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 300mW
Transition frequency(fT): 100MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
SOT89 Package NPN Bipolar Transistor KUU BCX56 Series Ideal for Amplification and Switching Tasks Manufactures
SOT89 Package NPN Bipolar Transistor KUU BCX56 Series Ideal for Amplification and Switching Tasks
Model Number: BCX56 Current - Collector Cutoff: 100nA
Pd - Power Dissipation: 500mW Transition frequency(fT): 130MHz
type: NPN Current - Collector(Ic): 1A
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
NPN Bipolar Transistor KUU D882 SOT89 Package Suitable Electronic Applications Low Saturation Voltage Manufactures
NPN Bipolar Transistor KUU D882 SOT89 Package Suitable Electronic Applications Low Saturation Voltage
Model Number: D882 Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 1uA Pd - Power Dissipation: 500mW
Transition frequency(fT): 60MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Management Electronic Transistor KUU B772 PNP Bipolar Type with Low Saturation Voltage Feature Manufactures
Power Management Electronic Transistor KUU B772 PNP Bipolar Type with Low Saturation Voltage Feature
Model Number: B772 Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 1uA Pd - Power Dissipation: 500mW
Transition frequency(fT): 80MHz type: PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
MDD Microdiode Semiconductor BC807-40 PNP Bipolar Transistor Designed for Electronic Circuit Performance Manufactures
MDD Microdiode Semiconductor BC807-40 PNP Bipolar Transistor Designed for Electronic Circuit Performance
Model Number: BC807-40 Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 300mW
Transition frequency(fT): 100MHz type: PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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