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Transistor Bipolar Bjt Single Configuration

transistor bipolar bjt single configuration

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Power Amplifier Transistor Minos MJE15033G Featuring Silicon Bipolar Epitaxial Planar Construction and High Breakdown Voltage Manufactures
Power Amplifier Transistor Minos MJE15033G Featuring Silicon Bipolar Epitaxial Planar Construction and High Breakdown Voltage
Model Number: MJE15033G Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 1mA Pd - Power Dissipation: 50W
Transition frequency(fT): 30MHz type: PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
NPN bipolar transistor XCH S8050T featuring 0.5A collector current and 0.3W power dissipation for switching Manufactures
NPN bipolar transistor XCH S8050T featuring 0.5A collector current and 0.3W power dissipation for switching
Model Number: S8050T Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA DC Current Gain: 400@50mA,1V
Transition frequency(fT): 150MHz Vce Saturation(VCE(sat)): 600mV@500mA,50mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
PNP Bipolar Transistor XZT BC807-25 High Current Gain and Low Saturation Voltage for AF Applications Manufactures
PNP Bipolar Transistor XZT BC807-25 High Current Gain and Low Saturation Voltage for AF Applications
Model Number: BC807-25 Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA DC Current Gain: 160@100mA,1V
Transition frequency(fT): 100MHz Vce Saturation(VCE(sat)): 700mV@500mA,50mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
General Purpose PNP Bipolar Transistor YANGJIE BC807-40WQ UL 94 V 0 Flammability Rated for Switching Manufactures
General Purpose PNP Bipolar Transistor YANGJIE BC807-40WQ UL 94 V 0 Flammability Rated for Switching
Model Number: BC807-40WQ Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA DC Current Gain: 600@100mA,1V
Transition frequency(fT): 100MHz Vce Saturation(VCE(sat)): 700mV@500mA,50mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Insulated Gate Bipolar Transistor HXY MOSFET FGH60N60SFDTU HXY for in UPS and Motor Drive Systems Manufactures
Insulated Gate Bipolar Transistor HXY MOSFET FGH60N60SFDTU HXY for in UPS and Motor Drive Systems
Model Number: FGH60N60SFDTU-HXY Pd - Power Dissipation: 250W
Td(off): 124ns Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems Manufactures
1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems
Model Number: APT40GR120B-HXY Td(off): 195ns
Pd - Power Dissipation: 417W Td(on): 48ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 35pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
insulated gate bipolar transistor HXY MOSFET RGS00TS65DHRC11-HXY with trench and field stop technology Manufactures
insulated gate bipolar transistor HXY MOSFET RGS00TS65DHRC11-HXY with trench and field stop technology
Model Number: RGS00TS65DHRC11-HXY Td(off): 122ns
Pd - Power Dissipation: 300W Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 92pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
650V 50A Insulated Gate Bipolar Transistor HXY MOSFET AIGW50N65H5-HXY for UPS EV Chargers and Solar Inverters Manufactures
650V 50A Insulated Gate Bipolar Transistor HXY MOSFET AIGW50N65H5-HXY for UPS EV Chargers and Solar Inverters
Model Number: AIGW50N65H5-HXY Pd - Power Dissipation: 250W
Td(off): 110ns Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.916nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Insulated Gate Bipolar Transistor HXY MOSFET DGTD65T50S1PT-HXY with Halogen Free and RoHS Compliance Manufactures
Insulated Gate Bipolar Transistor HXY MOSFET DGTD65T50S1PT-HXY with Halogen Free and RoHS Compliance
Model Number: DGTD65T50S1PT-HXY Td(off): 122ns
Pd - Power Dissipation: 300W Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 92pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
NPN Bipolar Transistor GOODWORK MMBTA05 in SOT23 Package Designed for Diverse Electronic Applications Manufactures
NPN Bipolar Transistor GOODWORK MMBTA05 in SOT23 Package Designed for Diverse Electronic Applications
Model Number: MMBTA05 Emitter-Base Voltage(Vebo): 4V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 300mW
Transition frequency(fT): 100MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
NPN Bipolar Transistor GOODWORK S9018 Suitable for High Frequency Signal Amplification and Switching Manufactures
NPN Bipolar Transistor GOODWORK S9018 Suitable for High Frequency Signal Amplification and Switching
Model Number: S9018 Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 50nA Pd - Power Dissipation: 200mW
Transition frequency(fT): 800MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
NPN Bipolar Transistor GOODWORK BC846A Designed to Deliver Consistent Results in Electronic Circuits Manufactures
NPN Bipolar Transistor GOODWORK BC846A Designed to Deliver Consistent Results in Electronic Circuits
Model Number: BC846A Current - Collector Cutoff: 100nA
Emitter-Base Voltage(Vebo): 6V Pd - Power Dissipation: 200mW
Transition frequency(fT): 100MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Lingxingic 2SC3356 LX Silicon Bipolar Transistor Designed for Microwave and RF Amplifier Circuits Manufactures
Lingxingic 2SC3356 LX Silicon Bipolar Transistor Designed for Microwave and RF Amplifier Circuits
Model Number: 2SC3356(LX) Emitter-Base Voltage(Vebo): 3V
Current - Collector Cutoff: 1uA Pd - Power Dissipation: 150mW
Transition frequency(fT): 6.5GHz Current - Collector(Ic): 100mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High voltage bipolar transistor Slkor CZT5401 featuring SOT223 package for electronic circuit design Manufactures
High voltage bipolar transistor Slkor CZT5401 featuring SOT223 package for electronic circuit design
Model Number: CZT5401 Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 50nA DC Current Gain: 100@10mA,5V
Transition frequency(fT): 300MHz Vce Saturation(VCE(sat)): 500mV@50mA,5mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
TOSHIBA HN1A01FU-YLF Silicon PNP Bipolar Transistor Featuring High Collector Current for Amplifiers Manufactures
TOSHIBA HN1A01FU-YLF Silicon PNP Bipolar Transistor Featuring High Collector Current for Amplifiers
Model Number: HN1A01FU-Y,LF Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA DC Current Gain: 120@2mA,6V
Transition frequency(fT): 80MHz Number: 2 PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Voltage NPN Bipolar Transistor TOSHIBA 2SC2712-GR TE85L F for Low Frequency and Audio Amplifiers Manufactures
High Voltage NPN Bipolar Transistor TOSHIBA 2SC2712-GR TE85L F for Low Frequency and Audio Amplifiers
Model Number: 2SC2712-GR(TE85L,F Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA DC Current Gain: 70@2mA,6V
Transition frequency(fT): 80MHz Vce Saturation(VCE(sat)): 250mV@100mA,10mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TBC847B LM for Low Frequency Amplifier Applications Manufactures
Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TBC847B LM for Low Frequency Amplifier Applications
Model Number: TBC847B,LM Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 30nA DC Current Gain: 200@2mA,5V
Transition frequency(fT): 100MHz Vce Saturation(VCE(sat)): 170mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Dual digital bipolar transistor ROHM UMA9NTR optimized for and space saving electronic circuit designs Manufactures
Dual digital bipolar transistor ROHM UMA9NTR optimized for and space saving electronic circuit designs
Model Number: UMA9NTR Output Voltage(VO(on)): 100mV
Input Resistor: 13kΩ Resistor Ratio: 1.2
Number: 2 PNP Pre-Biased Transistors Collector - Emitter Voltage VCEO: 50V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
TOSHIBA RN4984 LF CT Silicon NPN PNP Bipolar Transistor for Driver and Interface Circuit Applications Manufactures
TOSHIBA RN4984 LF CT Silicon NPN PNP Bipolar Transistor for Driver and Interface Circuit Applications
Model Number: RN4984,LF(CT DC Current Gain: 80@10mA,5V
Emitter-Base Voltage VEBO: 10V Current - Collector(Ic): 100mA
type: NPN+PNP Input Resistor: 47kΩ
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
switching NPN transistor Changzhou Starsea Elec S8050 designed for multiple electronic circuit needs Manufactures
switching NPN transistor Changzhou Starsea Elec S8050 designed for multiple electronic circuit needs
Model Number: S8050 Current - Collector Cutoff: 100nA
Emitter-Base Voltage(Vebo): 5V Pd - Power Dissipation: 300mW
Transition frequency(fT): 150MHz Current - Collector(Ic): 500mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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