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MDD Microdiode Semiconductor BC807-40 PNP Bipolar Transistor Designed for Electronic Circuit Performance

Categories Single Bipolar Transistors
Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA
Pd - Power Dissipation: 300mW
Transition frequency(fT): 100MHz
type: PNP
Number: 1 PNP
Current - Collector(Ic): 500mA
Collector - Emitter Voltage VCEO: 45V
Description: 300mW PNP 500mA 45V SOT-23 Single Bipolar Transistors RoHS
Mfr. Part #: BC807-40
Model Number: BC807-40
Package: SOT-23
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MDD Microdiode Semiconductor BC807-40 PNP Bipolar Transistor Designed for Electronic Circuit Performance

Product Overview

The BC807 is a PNP type bipolar transistor in a SOT-23 plastic-encapsulated package. It is ideally suited for automatic insertion and features an epitaxial planar die construction. A complementary NPN type, the BC817, is also available.

Product Attributes

  • Brand: microdiode
  • Package Type: SOT-23
  • Complementary NPN Type: BC817

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBOIC= -10A, IE=0-50V
Collector-Emitter VoltageVCEOIC= -10mA,IB=0-45V
Emitter-Base VoltageVEBOIE= -1A,IC=0-5V
Collector CurrentIC-500mA
Collector Power DissipationPC300mW
Thermal Resistance Junction To AmbientRJA417/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150
Collector Cut-off CurrentICBOVCB= -45V, IE=0-0.1A
Emitter Cut-off CurrentIEBOVEB= -4V, IC=0-0.1A
DC Current GainhFE(1)VCE= -1V, IC= -100mA100600
Collector-Emitter Saturation VoltageVCE(sat)IC= -500mA, IB= -50mA-0.7V
Base-Emitter Saturation VoltageVBE(sat)IC= -500mA, IB= -50mA-1.2V
Transition FrequencyfTVCE= -5V, IC= -10mA100MHz

2411121102_MDD-Microdiode-Semiconductor-BC807-40_C2992933.pdf

Quality MDD Microdiode Semiconductor BC807-40 PNP Bipolar Transistor Designed for Electronic Circuit Performance for sale
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