Sign In | Join Free | My entremaqueros.com
entremaqueros.com
Products
 Search by Category
Home >

Positive Temp Coefficient

positive temp coefficient

1,754 Results
All Verified positive temp coefficient suppliers & positive temp coefficient manufacturers have passed our Business License Check, they can provide quality positive temp coefficient products.
650V 50A IGBT Power Transistor HXY MOSFET APT45GR65B-HXY Suitable for UPS EV Charger Energy Storage Manufactures
650V 50A IGBT Power Transistor HXY MOSFET APT45GR65B-HXY Suitable for UPS EV Charger Energy Storage
Model Number: APT45GR65B-HXY Pd - Power Dissipation: 250W
Td(off): 110ns Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.916nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Powerful HXY MOSFET RGWS00TS65GC13-HXY 650V 50A IGBT Suitable for UPS EV Chargers and Solar Inverters Manufactures
Powerful HXY MOSFET RGWS00TS65GC13-HXY 650V 50A IGBT Suitable for UPS EV Chargers and Solar Inverters
Model Number: RGWS00TS65GC13-HXY Pd - Power Dissipation: 250W
Td(off): 110ns Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.916nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability Manufactures
High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability
Model Number: RJH1CV7DPQ-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
power control HXY MOSFET IRGP4266-EPBF-HXY for EV charger UPS and solar string inverter applications Manufactures
power control HXY MOSFET IRGP4266-EPBF-HXY for EV charger UPS and solar string inverter applications
Model Number: IRGP4266-EPBF-HXY Pd - Power Dissipation: 330W
Td(off): 130ns Td(on): 20ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 23pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
IGBT power device HXY MOSFET AOK50B65M2 with RoHS compliance halogen free and green device options Manufactures
IGBT power device HXY MOSFET AOK50B65M2 with RoHS compliance halogen free and green device options
Model Number: AOK50B65M2 Td(off): 122ns
Pd - Power Dissipation: 300W Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 92pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Robust IGBT HXY MOSFET AOK75B65H1 featuring low saturation voltage and high DC collector current for EV charger modules Manufactures
Robust IGBT HXY MOSFET AOK75B65H1 featuring low saturation voltage and high DC collector current for EV charger modules
Model Number: AOK75B65H1 Pd - Power Dissipation: 330W
Td(off): 130ns Td(on): 20ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 23pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
HXY MOSFET RGTH80TS65GC13 IGBT transistor featuring low EMI and maximum junction temperature of 175C Manufactures
HXY MOSFET RGTH80TS65GC13 IGBT transistor featuring low EMI and maximum junction temperature of 175C
Model Number: RGTH80TS65GC13-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
1200V 75A Insulated Gate Bipolar Transistor HXY MOSFET APT75GP120B2G-HXY for High Power Applications Manufactures
1200V 75A Insulated Gate Bipolar Transistor HXY MOSFET APT75GP120B2G-HXY for High Power Applications
Model Number: APT75GP120B2G-HXY Td(off): 185ns
Pd - Power Dissipation: 930W Td(on): 46ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 61pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High current IGBT HXY MOSFET STGWA40HP65FB-HXY designed for UPS and renewable energy systems applications Manufactures
High current IGBT HXY MOSFET STGWA40HP65FB-HXY designed for UPS and renewable energy systems applications
Model Number: STGWA40HP65FB-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
1200V 50A power transistor HXY MOSFET IXYR50N120C3D1-HXY designed for UPS EV charger and solar inverter Manufactures
1200V 50A power transistor HXY MOSFET IXYR50N120C3D1-HXY designed for UPS EV charger and solar inverter
Model Number: IXYR50N120C3D1-HXY Td(off): 216ns
Pd - Power Dissipation: 600W Td(on): 55ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 42pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
switching device HXY MOSFET MIW40N120FLA-BP-HXY offering low VCE saturation and avalanche energy capability Manufactures
switching device HXY MOSFET MIW40N120FLA-BP-HXY offering low VCE saturation and avalanche energy capability
Model Number: MIW40N120FLA-BP-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High voltage HXY MOSFET NGTB35N65FL2WG HXY IGBT suitable for demanding power electronics applications Manufactures
High voltage HXY MOSFET NGTB35N65FL2WG HXY IGBT suitable for demanding power electronics applications
Model Number: NGTB35N65FL2WG-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
EconoDUAL3 Infineon FF450R17ME4 IGBT module with isolated base plate and high power density design Manufactures
EconoDUAL3 Infineon FF450R17ME4 IGBT module with isolated base plate and high power density design
Model Number: FF450R17ME4 Description: Single IGBTs RoHS
Mfr. Part #: FF450R17ME4
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
1200 Volt TRENCHSTOP IGBT 7 Technology Device Featuring Infineon IKZA75N120CH7XKSA1 for Industrial Manufactures
1200 Volt TRENCHSTOP IGBT 7 Technology Device Featuring Infineon IKZA75N120CH7XKSA1 for Industrial
Model Number: IKZA75N120CH7XKSA1 Td(off): 38ns
Pd - Power Dissipation: 549W Td(on): 15ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Input Capacitance(Cies): 193nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
HXY MOSFET APT45GP120B2DQ2G HXY 1200V 50A IGBT transistor module for solar and EV charging solutions Manufactures
HXY MOSFET APT45GP120B2DQ2G HXY 1200V 50A IGBT transistor module for solar and EV charging solutions
Model Number: APT45GP120B2DQ2G-HXY Td(off): 216ns
Pd - Power Dissipation: 600W Td(on): 55ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 42pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Semiconductor Device HXY MOSFET IXYH40N65C3H1 HXY Suitable for EV Charger and Renewable Energy Systems Manufactures
Power Semiconductor Device HXY MOSFET IXYH40N65C3H1 HXY Suitable for EV Charger and Renewable Energy Systems
Model Number: IXYH40N65C3H1-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Industrial Grade Infineon FF150R12RT4 IGBT Module with Isolated Base Plate and Standard Housing Design Manufactures
Industrial Grade Infineon FF150R12RT4 IGBT Module with Isolated Base Plate and Standard Housing Design
Model Number: FF150R12RT4 Pd - Power Dissipation: 790W
Td(off): 300ns Td(on): 130ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Input Capacitance(Cies): 9.35nF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
62mm C Series IGBT module Infineon FF200R17KE4 with fast Trench Fieldstop IGBT4 and Emitter Controlled diode Manufactures
62mm C Series IGBT module Infineon FF200R17KE4 with fast Trench Fieldstop IGBT4 and Emitter Controlled diode
Model Number: FF200R17KE4 Pd - Power Dissipation: 1.25kW
Td(off): 700ns Td(on): 240ns
Collector-Emitter Breakdown Voltage (Vces): 1.7kV Input Capacitance(Cies): 18nF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
IGBT transistor HXY MOSFET IXYP15N65C3D1M-HXY for energy storage UPS and three phase solar inverters Manufactures
IGBT transistor HXY MOSFET IXYP15N65C3D1M-HXY for energy storage UPS and three phase solar inverters
Model Number: IXYP15N65C3D1M-HXY Td(off): 156ns
Pd - Power Dissipation: 250W Td(on): 46ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 11pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High power Infineon FZ600R12KE4 IGBT module with 1200 volt voltage and 600 amp continuous current rating Manufactures
High power Infineon FZ600R12KE4 IGBT module with 1200 volt voltage and 600 amp continuous current rating
Model Number: FZ600R12KE4 Pd - Power Dissipation: 3kW
Td(off): 610ns Td(on): 240ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 1.7nF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
< 40 41 42 43 44 45 46 47 48 49 50 NEXT >
Go To Page GO
Inquiry Cart 0
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
Fair Trading Service

Report fraud supplier Report IPR Products

Friendly Links: www.everychina.com

Home| Products| Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们

Copyright © 2009 - 2026 entremaqueros.com. All rights reserved.