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Positive Temp Coefficient

positive temp coefficient

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Durable IGBT transistor HXY MOSFET FGH40T65SQD-F155-HXY optimized for UPS and renewable energy power systems Manufactures
Durable IGBT transistor HXY MOSFET FGH40T65SQD-F155-HXY optimized for UPS and renewable energy power systems
Model Number: FGH40T65SQD-F155-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
switching transistor HXY MOSFET RGS00TS65EHRC11-HXY for UPS motor drives boost converter applications Manufactures
switching transistor HXY MOSFET RGS00TS65EHRC11-HXY for UPS motor drives boost converter applications
Model Number: RGS00TS65EHRC11-HXY Td(off): 122ns
Pd - Power Dissipation: 300W Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 92pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Powerful HXY MOSFET FGHL50T65SQ-HXY 650V 50A IGBT with Easy Paralleling and Low Gate Charge Features Manufactures
Powerful HXY MOSFET FGHL50T65SQ-HXY 650V 50A IGBT with Easy Paralleling and Low Gate Charge Features
Model Number: FGHL50T65SQ-HXY Pd - Power Dissipation: 250W
Td(off): 110ns Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.916nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
IGBT HXY MOSFET RGS00TS65HRC11-HXY featuring low saturation voltage and low electromagnetic interference Manufactures
IGBT HXY MOSFET RGS00TS65HRC11-HXY featuring low saturation voltage and low electromagnetic interference
Model Number: RGS00TS65HRC11-HXY Pd - Power Dissipation: 250W
Td(off): 110ns Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.916nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Industrial Grade IGBT Module Infineon FS50R12KT4B15 Suitable for Auxiliary Inverters and Motor Drives Manufactures
Industrial Grade IGBT Module Infineon FS50R12KT4B15 Suitable for Auxiliary Inverters and Motor Drives
Model Number: FS50R12KT4B15 Td(off): 300ns
Pd - Power Dissipation: 280W Td(on): 130ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 0.1nF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems Manufactures
1200 Volt Insulated Gate Bipolar Transistor HXY MOSFET APT40GR120B-HXY for Energy Conversion Systems
Model Number: APT40GR120B-HXY Td(off): 195ns
Pd - Power Dissipation: 417W Td(on): 48ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 35pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switching HXY MOSFET IXYH40N65B3D1-HXY IGBT Module with Low EMI and High Temperature Tolerance Manufactures
Power Switching HXY MOSFET IXYH40N65B3D1-HXY IGBT Module with Low EMI and High Temperature Tolerance
Model Number: IXYH40N65B3D1-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 11pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
650V 90A IGBT transistor HXY MOSFET APT70GR65B-HXY TO247 package for electronic applications Manufactures
650V 90A IGBT transistor HXY MOSFET APT70GR65B-HXY TO247 package for electronic applications
Model Number: APT70GR65B-HXY Pd - Power Dissipation: 330W
Td(off): 130ns Td(on): 20ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 23pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power transistor HXY MOSFET RGWS80TS65GC13-HXY with excellent thermal stability and low EMI Manufactures
Power transistor HXY MOSFET RGWS80TS65GC13-HXY with excellent thermal stability and low EMI
Model Number: RGWS80TS65GC13-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power semiconductor HXY MOSFET FGH50T65SQD-F155-HXY 650V 50A IGBT with low gate charge and low EMI Manufactures
Power semiconductor HXY MOSFET FGH50T65SQD-F155-HXY 650V 50A IGBT with low gate charge and low EMI
Model Number: FGH50T65SQD-F155-HXY Pd - Power Dissipation: 250W
Td(off): 110ns Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 13pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
switching transistor HXY MOSFET NGTB40N120IHRWG-HXY with RoHS compliance and green halogen free packaging Manufactures
switching transistor HXY MOSFET NGTB40N120IHRWG-HXY with RoHS compliance and green halogen free packaging
Model Number: NGTB40N120IHRWG-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
1200V 75A IGBT Transistor HXY MOSFET APT70GR120B2-HXY with Low EMI and Enhanced Thermal Stability Manufactures
1200V 75A IGBT Transistor HXY MOSFET APT70GR120B2-HXY with Low EMI and Enhanced Thermal Stability
Model Number: APT70GR120B2-HXY Td(off): 185ns
Pd - Power Dissipation: 930W Td(on): 46ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 61pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
AECQ101 Qualified TO247 Package HXY MOSFET SPT40N120T1B1T8TL HXY Ideal for PTC and OBC Applications Manufactures
AECQ101 Qualified TO247 Package HXY MOSFET SPT40N120T1B1T8TL HXY Ideal for PTC and OBC Applications
Model Number: SPT40N120T1B1T8TL-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability Manufactures
High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability
Model Number: RGS80TS65HRC11-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
insulated gate bipolar transistor HXY MOSFET SPT40N120F1AT8TL HXY designed for UPS and inverter Manufactures
insulated gate bipolar transistor HXY MOSFET SPT40N120F1AT8TL HXY designed for UPS and inverter
Model Number: SPT40N120F1AT8TL-HXY Td(off): 195ns
Pd - Power Dissipation: 417W Td(on): 48ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 35pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power transistor HXY MOSFET IGW50N60TP designed for UPS EV charger and solar string inverter systems Manufactures
Power transistor HXY MOSFET IGW50N60TP designed for UPS EV charger and solar string inverter systems
Model Number: IGW50N60TP-HXY Pd - Power Dissipation: 250W
Td(off): 110ns Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.916nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Semiconductor HXY MOSFET IRGP4790D-EPBF-HXY 650V 75A IGBT Module Suitable for UPS EV Chargers Manufactures
Power Semiconductor HXY MOSFET IRGP4790D-EPBF-HXY 650V 75A IGBT Module Suitable for UPS EV Chargers
Model Number: IRGP4790D-EPBF-HXY Pd - Power Dissipation: 330W
Td(off): 130ns Td(on): 20ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 23pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Insulated Gate Bipolar Transistor HXY MOSFET IXYH40N120C3-HXY with Low Saturation Voltage and EMI Manufactures
Insulated Gate Bipolar Transistor HXY MOSFET IXYH40N120C3-HXY with Low Saturation Voltage and EMI
Model Number: IXYH40N120C3-HXY Td(off): 195ns
Pd - Power Dissipation: 417W Td(on): 48ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 35pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
insulated gate bipolar transistor HXY MOSFET AOK40B65HQ2 with low EMI and high temperature tolerance Manufactures
insulated gate bipolar transistor HXY MOSFET AOK40B65HQ2 with low EMI and high temperature tolerance
Model Number: AOK40B65HQ2 Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 11pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
power conversion component HXY MOSFET AFGHL50T65SQD-HXY 650V 50A IGBT for UPS EV chargers solar inverters Manufactures
power conversion component HXY MOSFET AFGHL50T65SQD-HXY 650V 50A IGBT for UPS EV chargers solar inverters
Model Number: AFGHL50T65SQD-HXY Pd - Power Dissipation: 250W
Td(off): 110ns Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.916nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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