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main power switch

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Power Switch MOSFET ElecSuper ESJL3134KW N Channel Device Featuring Low Gate Charge and Excellent RDS Manufactures
Power Switch MOSFET ElecSuper ESJL3134KW N Channel Device Featuring Low Gate Charge and Excellent RDS
Model Number: ESJL3134KW Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 880mA RDS(on): 220mΩ@4.5V,0.5A
Gate Threshold Voltage (Vgs(th)): 750mV@250uA Reverse Transfer Capacitance (Crss@Vds): 10pF@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
P Channel MOSFET ElecSuper FDC6310P ES for power switch DC DC conversion and charging circuit design Manufactures
P Channel MOSFET ElecSuper FDC6310P ES for power switch DC DC conversion and charging circuit design
Model Number: FDC6310P-ES Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 2A Operating Temperature -: -55℃~+150℃
RDS(on): 82mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 620mV@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Gate Charge N Channel MOSFET ElecSuper AO4468 ES Ideal for Charging Circuits and Power Switching Manufactures
Low Gate Charge N Channel MOSFET ElecSuper AO4468 ES Ideal for Charging Circuits and Power Switching
Model Number: AO4468-ES Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 12A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 9mΩ@10V Gate Threshold Voltage (Vgs(th)): 1.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel Enhancement Mode MOSFET ElecSuper ES2302S Low On Resistance for Power Switching Applications Manufactures
N Channel Enhancement Mode MOSFET ElecSuper ES2302S Low On Resistance for Power Switching Applications
Model Number: ES2302S Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 3.3A RDS(on): 45mΩ@4.5V;62mΩ@2.5V
Gate Threshold Voltage (Vgs(th)): 700mV@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Gate Charge N Channel MOSFET ElecSuper ESJ2312 Designed for Charging Circuit and Power Switching Manufactures
Low Gate Charge N Channel MOSFET ElecSuper ESJ2312 Designed for Charging Circuit and Power Switching
Model Number: ESJ2312 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 4A RDS(on): 25mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)): 700mV@250uA Reverse Transfer Capacitance (Crss@Vds): 50pF@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Reliability N Channel Transistor ElecSuper AON6512 ES for Power Switching and Charging Circuits Manufactures
High Reliability N Channel Transistor ElecSuper AON6512 ES for Power Switching and Charging Circuits
Model Number: AON6512-ES Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 120A RDS(on): 1.15mΩ@10V;1.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 1.5V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switching N Channel MOSFET ElecSuper SI2392ADS T1 GE3 with Low RDS ON and Halogen Free Material Manufactures
Power Switching N Channel MOSFET ElecSuper SI2392ADS T1 GE3 with Low RDS ON and Halogen Free Material
Model Number: SI2392ADS-T1-GE3 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 2.6A Operating Temperature -: -55℃~+150℃
RDS(on): 90mΩ@10V;120mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.65V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET ElecSuper ESJL2302B SuperMOS SOT 23 for DC DC Conversion Power Switch and Charging Circuits Manufactures
N Channel MOSFET ElecSuper ESJL2302B SuperMOS SOT 23 for DC DC Conversion Power Switch and Charging Circuits
Model Number: ESJL2302B Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 3.3A RDS(on): 45mΩ@4.5V,3.5A
Gate Threshold Voltage (Vgs(th)): 700mV@250uA Reverse Transfer Capacitance (Crss@Vds): 28pF@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switching MOSFET ElecSuper AO4406AL N Channel with Low Gate Leakage and High Density Cell Design Manufactures
Power Switching MOSFET ElecSuper AO4406AL N Channel with Low Gate Leakage and High Density Cell Design
Model Number: AO4406AL Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 20A Operating Temperature -: -55℃~+150℃
RDS(on): 10mΩ@10V;17mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.6V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Gate Charge N Channel MOSFET ElecSuper ES50N03D Suitable for DC DC Converters and Power Switches Manufactures
Low Gate Charge N Channel MOSFET ElecSuper ES50N03D Suitable for DC DC Converters and Power Switches
Model Number: ES50N03D Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 50A RDS(on): 13mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 2.5V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel Enhancement Mode MOSFET ElecSuper SI2306 ES Ideal for Power Switching and Charging Circuits Manufactures
N Channel Enhancement Mode MOSFET ElecSuper SI2306 ES Ideal for Power Switching and Charging Circuits
Model Number: SI2306-ES Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 4.3A RDS(on): 34mΩ@10V;50mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 1.6V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Gate Charge N Channel MOSFET ElecSuper BSS123-7-F Ideal for Power Switching and Charging Circuits Manufactures
Low Gate Charge N Channel MOSFET ElecSuper BSS123-7-F Ideal for Power Switching and Charging Circuits
Model Number: BSS123-7-F Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 290mA Operating Temperature -: -55℃~+150℃
RDS(on): 2.7Ω@10V Gate Threshold Voltage (Vgs(th)): 1.8V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET ElecSuper IRFB7440PBF ES Suitable for Power Switch and Charging Circuit Applications Manufactures
N Channel MOSFET ElecSuper IRFB7440PBF ES Suitable for Power Switch and Charging Circuit Applications
Model Number: IRFB7440PBF(ES) Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 140A RDS(on): 2mΩ@10V;3mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 2.5V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switch N Channel MOSFET ElecSuper DMP1045U 7 ES Featuring Low Gate Charge and Trench Technology Manufactures
Power Switch N Channel MOSFET ElecSuper DMP1045U 7 ES Featuring Low Gate Charge and Trench Technology
Model Number: DMP1045U-7(ES) Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 3A RDS(on): 75mΩ@10V
Gate Threshold Voltage (Vgs(th)): 1.4V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low gate charge N Channel MOSFET ElecSuper AO3402A ES ideal for power switching and charging circuits Manufactures
Low gate charge N Channel MOSFET ElecSuper AO3402A ES ideal for power switching and charging circuits
Model Number: AO3402A-ES Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 4.2A RDS(on): 40mΩ@10V
Gate Threshold Voltage (Vgs(th)): 900mV@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Gate Charge N Channel MOSFET ElecSuper 2N7002KDW Suitable for Charging Circuits and Power Switch Manufactures
Low Gate Charge N Channel MOSFET ElecSuper 2N7002KDW Suitable for Charging Circuits and Power Switch
Model Number: 2N7002KDW Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 300mA Operating Temperature -: -55℃~+150℃
RDS(on): 1.85Ω@10V;2.05Ω@4.5V Gate Threshold Voltage (Vgs(th)): 1.6V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET ElecSuper ESS8810 Suitable for DC DC Conversion Power Switch and Charging Circuits Manufactures
N Channel MOSFET ElecSuper ESS8810 Suitable for DC DC Conversion Power Switch and Charging Circuits
Model Number: ESS8810 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 9.5A Operating Temperature -: -55℃~+150℃
RDS(on): 11mΩ@4.5V;14mΩ@2.5V Gate Threshold Voltage (Vgs(th)): 700mV@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
ElecSuper ESP2301LT1G ES P Channel MOSFET Featuring Low RDS ON for DC DC Conversion and Power Switch Manufactures
ElecSuper ESP2301LT1G ES P Channel MOSFET Featuring Low RDS ON for DC DC Conversion and Power Switch
Model Number: ESP2301LT1G(ES) Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 2A RDS(on): 82mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 620mV@250uA Type: P-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
ElecSuper BSS138WH6327 ES MOSFET Featuring Low RDS ON and UL 94V 0 Certification for Power Switching Manufactures
ElecSuper BSS138WH6327 ES MOSFET Featuring Low RDS ON and UL 94V 0 Certification for Power Switching
Model Number: BSS138WH6327-ES Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 360mA Operating Temperature -: -55℃~+150℃
RDS(on): 1.5Ω@10V Gate Threshold Voltage (Vgs(th)): 1V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
ElecSuper FDS4435BZ ES P Channel Enhancement MOSFET Ideal for Charging Circuits and Power Switching Manufactures
ElecSuper FDS4435BZ ES P Channel Enhancement MOSFET Ideal for Charging Circuits and Power Switching
Model Number: FDS4435BZ-ES Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 10.5A RDS(on): 13.5mΩ@10V;18.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 1.5V@250uA Type: P-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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