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main power switch

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High Reliability N Channel MOSFET ElecSuper AO3404 for DC DC Conversion and Power Switching Applications Manufactures
High Reliability N Channel MOSFET ElecSuper AO3404 for DC DC Conversion and Power Switching Applications
Model Number: AO3404 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 6.2A Operating Temperature -: -
RDS(on): 17mΩ@10V;26mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Durable P Channel MOSFET ElecSuper SI2305CDS ES for Charging Circuit and Power Switch Applications Manufactures
Durable P Channel MOSFET ElecSuper SI2305CDS ES for Charging Circuit and Power Switch Applications
Model Number: SI2305CDS(ES) Drain to Source Voltage: 12V
Current - Continuous Drain(Id): 3.8A RDS(on): 40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 1V@250uA Type: P-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switching Device ElecSuper DMG2302UK-7-ES N Channel MOSFET with Low RDS ON and ESD Protection Manufactures
Power Switching Device ElecSuper DMG2302UK-7-ES N Channel MOSFET with Low RDS ON and ESD Protection
Model Number: DMG2302UK-7-ES Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 3.3A Operating Temperature -: -55℃~+150℃
RDS(on): 45mΩ@4.5V;62mΩ@2.5V Gate Threshold Voltage (Vgs(th)): 700mV@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switch and DC DC Conversion Solutions with ElecSuper ESN7410 N Channel Enhancement Mode MOSFET Manufactures
Power Switch and DC DC Conversion Solutions with ElecSuper ESN7410 N Channel Enhancement Mode MOSFET
Model Number: ESN7410 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 25A RDS(on): 14mΩ@10V;23mΩ@4.5V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Gate Charge ElecSuper SI2302 N Channel MOSFET Designed for Power Switching and Charging Circuits Manufactures
Low Gate Charge ElecSuper SI2302 N Channel MOSFET Designed for Power Switching and Charging Circuits
Model Number: SI2302 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 3.3A Operating Temperature -: -55℃~+150℃
RDS(on): 45mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 700mV@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel Enhancement MOSFET ElecSuper 2N7002W Suitable for DC DC Conversion Power Switch Applications Manufactures
N Channel Enhancement MOSFET ElecSuper 2N7002W Suitable for DC DC Conversion Power Switch Applications
Model Number: 2N7002W Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 300mA Operating Temperature -: -55℃~+150℃
RDS(on): 1.85Ω@10V;2.05Ω@4.5V Gate Threshold Voltage (Vgs(th)): 1.6V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N channel MOSFET ElecSuper 2SK3018T106 ES for DC DC conversion power switching and charging circuits Manufactures
N channel MOSFET ElecSuper 2SK3018T106 ES for DC DC conversion power switching and charging circuits
Model Number: 2SK3018T106(ES) Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 300mA RDS(on): 1.8Ω@10V
Gate Threshold Voltage (Vgs(th)): 1.1V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
ElecSuper BSS138LT3G ES N Channel Enhancement Mode MOSFET Suitable for Power Switching Applications Manufactures
ElecSuper BSS138LT3G ES N Channel Enhancement Mode MOSFET Suitable for Power Switching Applications
Model Number: BSS138LT3G-ES Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 400mA Operating Temperature -: -55℃~+150℃
RDS(on): 1.5Ω@10V Gate Threshold Voltage (Vgs(th)): 1V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low RDS ON N Channel MOSFET ElecSuper BVSS138LT1G ES Designed for Power Switch and Charging Circuits Manufactures
Low RDS ON N Channel MOSFET ElecSuper BVSS138LT1G ES Designed for Power Switch and Charging Circuits
Model Number: BVSS138LT1G-ES Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 400mA Operating Temperature -: -
RDS(on): 1.5Ω@10V Gate Threshold Voltage (Vgs(th)): 1V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET ElecSuper ESE6080K Featuring Trench Technology for Charging Circuit and Power Switch Manufactures
N Channel MOSFET ElecSuper ESE6080K Featuring Trench Technology for Charging Circuit and Power Switch
Model Number: ESE6080K Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 80A RDS(on): 6mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)): 2.8V@250uA Reverse Transfer Capacitance (Crss@Vds): 240pF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET ElecSuper ES3134KL suitable for power switch charging circuits and DC DC conversion Manufactures
N Channel MOSFET ElecSuper ES3134KL suitable for power switch charging circuits and DC DC conversion
Model Number: ES3134KL Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 880mA Operating Temperature -: -55℃~+150℃
RDS(on): 220mΩ@4.5V,0.5A Gate Threshold Voltage (Vgs(th)): 1.1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET ElecSuper ES2102EI Featuring Low Gate Charge and Excellent RDS ON for Power Switch Manufactures
N Channel MOSFET ElecSuper ES2102EI Featuring Low Gate Charge and Excellent RDS ON for Power Switch
Model Number: ES2102EI Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 4.5A Operating Temperature -: -55℃~+150℃
RDS(on): 37mΩ@4.5V;47mΩ@2.5V Gate Threshold Voltage (Vgs(th)): 700mV@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
ElecSuper ES3N06G AB3 R N channel MOSFET designed for power switch and charging circuit applications Manufactures
ElecSuper ES3N06G AB3 R N channel MOSFET designed for power switch and charging circuit applications
Model Number: ES3N06G-AB3-R Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 5A RDS(on): 95mΩ@10V;125mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 1.65V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
ElecSuper WPM2015-3TR ES P Channel MOSFET Featuring Trench Technology for Power Switching Solutions Manufactures
ElecSuper WPM2015-3TR ES P Channel MOSFET Featuring Trench Technology for Power Switching Solutions
Model Number: WPM2015-3/TR-ES Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 2.3A RDS(on): 90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 700mV@250uA Type: P-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power switch N Channel MOSFET ElecSuper ESN4486 offering trench technology and halogen free material Manufactures
Power switch N Channel MOSFET ElecSuper ESN4486 offering trench technology and halogen free material
Model Number: ESN4486 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 10A Operating Temperature -: -55℃~+150℃
RDS(on): 82mΩ@10V;90mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.8V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Gate Charge ElecSuper FDV301N ES N Channel MOSFET Suitable for DC DC Conversion and Power Switch Manufactures
Low Gate Charge ElecSuper FDV301N ES N Channel MOSFET Suitable for DC DC Conversion and Power Switch
Model Number: FDV301N-ES Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 1.25A RDS(on): 220mΩ@4.5V
Gate Threshold Voltage (Vgs(th)): 750mV@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switching MOSFET ElecSuper ES138KW N Channel Device with Trench Technology and Low Gate Charge Manufactures
Power Switching MOSFET ElecSuper ES138KW N Channel Device with Trench Technology and Low Gate Charge
Model Number: ES138KW Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 300mA Operating Temperature -: -55℃~+150℃
RDS(on): 1.8Ω@10V,0.3A Gate Threshold Voltage (Vgs(th)): 700mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power switch N Channel MOSFET ElecSuper ESJL3400A featuring trench technology and low gate charge design Manufactures
Power switch N Channel MOSFET ElecSuper ESJL3400A featuring trench technology and low gate charge design
Model Number: ESJL3400A Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 5.8A RDS(on): 21mΩ@10V,5.8A
Gate Threshold Voltage (Vgs(th)): 1V@250uA Reverse Transfer Capacitance (Crss@Vds): 48pF@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
power switching ElecSuper RUM001L02T2CL ES N Channel MOSFET featuring low gate charge and resistance Manufactures
power switching ElecSuper RUM001L02T2CL ES N Channel MOSFET featuring low gate charge and resistance
Model Number: RUM001L02T2CL(ES) Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 900mA RDS(on): 150mΩ@4.5V;200mΩ@2.5V
Gate Threshold Voltage (Vgs(th)): 650mV@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
power switching ElecSuper IRLML0030TRPBF ES MOSFET with trench technology and low RDS ON resistance Manufactures
power switching ElecSuper IRLML0030TRPBF ES MOSFET with trench technology and low RDS ON resistance
Model Number: IRLML0030TRPBF-ES Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 5.8A RDS(on): 21mΩ@10V
Gate Threshold Voltage (Vgs(th)): 1V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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