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Transistor Sd1446 Original

transistor sd1446 original

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General purpose small signal transistor ROHM 2SA2029T2LQ with complementary transistor compatibility Manufactures
General purpose small signal transistor ROHM 2SA2029T2LQ with complementary transistor compatibility
Model Number: 2SA2029T2LQ Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 150mW
Transition frequency(fT): 140MHz type: PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High voltage NPN transistor ROHM 2SD2211T100R offering 160V breakdown voltage and high transition frequency Manufactures
High voltage NPN transistor ROHM 2SD2211T100R offering 160V breakdown voltage and high transition frequency
Model Number: 2SD2211T100R Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 50uA Pd - Power Dissipation: 2W
Transition frequency(fT): 80MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High speed switching transistor ROHM 2SC5876T106Q with 80 nanoseconds turn off time and low saturation voltage Manufactures
High speed switching transistor ROHM 2SC5876T106Q with 80 nanoseconds turn off time and low saturation voltage
Model Number: 2SC5876T106Q Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 1uA Pd - Power Dissipation: 200mW
Transition frequency(fT): 300MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Small signal transistor ROHM 2SA2029T2LR featuring VCEO minus 50 volts IC minus 150 milliamps and excellent hFE linearity Manufactures
Small signal transistor ROHM 2SA2029T2LR featuring VCEO minus 50 volts IC minus 150 milliamps and excellent hFE linearity
Model Number: 2SA2029T2LR Current - Collector Cutoff: 100nA
Pd - Power Dissipation: 150mW Transition frequency(fT): 140MHz
type: PNP Current - Collector(Ic): 150mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Transistor ROHM 2SC5585TL low frequency type with 90 millivolt VCE saturation and 270 hFE typical gain Manufactures
Transistor ROHM 2SC5585TL low frequency type with 90 millivolt VCE saturation and 270 hFE typical gain
Model Number: 2SC5585TL Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 150mW
Transition frequency(fT): 320MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
General purpose amplifier transistor ROHM 2SC5658T2LR with 400 millivolt collector emitter saturation Manufactures
General purpose amplifier transistor ROHM 2SC5658T2LR with 400 millivolt collector emitter saturation
Model Number: 2SC5658T2LR Emitter-Base Voltage(Vebo): 7V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 150mW
Transition frequency(fT): 180MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Dual transistor ROHM EMT1T2R suitable for small signal amplification and automatic mounting processes Manufactures
Dual transistor ROHM EMT1T2R suitable for small signal amplification and automatic mounting processes
Model Number: EMT1T2R Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 150mW
Transition frequency(fT): 140MHz type: PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low VCEsat PNP transistor ROHM 2SAR513RTL suitable for high speed switching and driver application circuits Manufactures
Low VCEsat PNP transistor ROHM 2SAR513RTL suitable for high speed switching and driver application circuits
Model Number: 2SAR513RTL Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 1uA Pd - Power Dissipation: 1W
Transition frequency(fT): 400MHz type: PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
General purpose PNP transistor Slkor MMST2907A plastic encapsulated with complementary NPN MMST2222A type Manufactures
General purpose PNP transistor Slkor MMST2907A plastic encapsulated with complementary NPN MMST2222A type
Model Number: MMST2907A Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA DC Current Gain: 300@150mA,10V
Type: PNP Transition frequency(fT): 200MHz
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon NPN Epitaxial Transistor TOSHIBA 2SC6026MFVGR L3F for General Purpose Amplifier Applications Manufactures
Silicon NPN Epitaxial Transistor TOSHIBA 2SC6026MFVGR L3F for General Purpose Amplifier Applications
Model Number: 2SC6026MFVGR,L3F Current - Collector Cutoff: 100nA
DC Current Gain: 120@2mA,6V Transition frequency(fT): 60MHz
Vce Saturation(VCE(sat)): 150mV type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
TOSHIBA 2SC5810 T2LXG ZF Silicon NPN Epitaxial Transistor with High Gain and Low Saturation Voltage Manufactures
TOSHIBA 2SC5810 T2LXG ZF Silicon NPN Epitaxial Transistor with High Gain and Low Saturation Voltage
Model Number: 2SC5810(T2LXG,ZF) Emitter-Base Voltage(Vebo): 7V
Current - Collector Cutoff: 100nA DC Current Gain: 400@0.1A,2V
Vce Saturation(VCE(sat)): 170mV type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Current Gain NPN Darlington Transistor UTC BTC1510F3L-TN3-R Suitable for Amplifier Applications Manufactures
High Current Gain NPN Darlington Transistor UTC BTC1510F3L-TN3-R Suitable for Amplifier Applications
Model Number: BTC1510F3L-TN3-R Current - Collector Cutoff: 200uA
DC Current Gain: 20 Vce Saturation(VCE(sat)): 2V@5A,10mA
type: NPN Pd - Power Dissipation: 1.1W
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
silicon NPN transistor TOSHIBA 2SC5810 TE12L F ideal for DC DC converter and fast switching circuits Manufactures
silicon NPN transistor TOSHIBA 2SC5810 TE12L F ideal for DC DC converter and fast switching circuits
Model Number: 2SC5810(TE12L,F) Current - Collector Cutoff: 100nA
Emitter-Base Voltage(Vebo): 7V DC Current Gain: 1000@0.1A,2V
Vce Saturation(VCE(sat)): 170mV@300mA,6mA type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Medium power amplification transistor YONGYUTAI MMBT5551 200 300 milliwatt high voltage NPN switch Manufactures
Medium power amplification transistor YONGYUTAI MMBT5551 200 300 milliwatt high voltage NPN switch
Model Number: MMBT5551 200-300 Emitter-Base Voltage(Vebo): 6V
Current - Collector Cutoff: 50nA DC Current Gain: 300@10mA,5V
Transition frequency(fT): 300MHz Vce Saturation(VCE(sat)): 200mV@50mA,5mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon PNP Transistor UTC 2SB1260G-Q-AB3-R with High Current and Low Saturation Voltage Performance Manufactures
Silicon PNP Transistor UTC 2SB1260G-Q-AB3-R with High Current and Low Saturation Voltage Performance
Model Number: 2SB1260G-Q-AB3-R Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 1uA DC Current Gain: 120@100mA,3V
Transition frequency(fT): 100MHz Vce Saturation(VCE(sat)): 400mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Dual NPN transistor amsem UMH11N offering performance with independent elements and RoHS compliance Manufactures
Dual NPN transistor amsem UMH11N offering performance with independent elements and RoHS compliance
Model Number: UMH11N Output Voltage(VO(on)): 300mV
Input Resistor: 10kΩ Resistor Ratio: 1
Collector - Emitter Voltage VCEO: 50V Description: Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SOT-363
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
General purpose digital transistor amsem UMD9N with NPN PNP elements and lead free finish RoHS compliant Manufactures
General purpose digital transistor amsem UMD9N with NPN PNP elements and lead free finish RoHS compliant
Model Number: UMD9N Input Resistor: 13kΩ
Resistor Ratio: 5.7 Collector - Emitter Voltage VCEO: 50V
Description: Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 150mW Surface Mount SOT-363 Mfr. Part #: UMD9N
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Digital Transistor CBI DTC143ZE NPN Silicon Epitaxial Planar Featuring Integrated Bias Resistors for Circuit Design Manufactures
Digital Transistor CBI DTC143ZE NPN Silicon Epitaxial Planar Featuring Integrated Bias Resistors for Circuit Design
Model Number: DTC143ZE Output Voltage(VO(on)): -
Input Resistor: 4.7kΩ Resistor Ratio: 10
Collector - Emitter Voltage VCEO: 50V Description: Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-523
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Digital Transistor NPN Silicon Epitaxial Planar Model CBI DTC114YE Featuring Built-in Bias Resistors Manufactures
Digital Transistor NPN Silicon Epitaxial Planar Model CBI DTC114YE Featuring Built-in Bias Resistors
Model Number: DTC114YE Output Voltage(VO(on)): 300mV@10mA,0.5mA
Input Resistor: 10kΩ Resistor Ratio: 1
Collector - Emitter Voltage VCEO: 50V Description: 50V SOT-523 Single, Pre-Biased Bipolar Transistors RoHS
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon Epitaxial Planar Digital Transistor Huixin MMDTA114YE PNP Type with Built in Bias Resistors and RoHS Manufactures
Silicon Epitaxial Planar Digital Transistor Huixin MMDTA114YE PNP Type with Built in Bias Resistors and RoHS
Model Number: MMDTA114YE Input Resistor: 13kΩ
Resistor Ratio: 5.7 Collector - Emitter Voltage VCEO: 50V
Description: 50V SOT-523 Single, Pre-Biased Bipolar Transistors RoHS Mfr. Part #: MMDTA114YE
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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