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Transistor Bipolar Bjt Single Configuration

transistor bipolar bjt single configuration

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Low noise silicon NPN RF bipolar transistor Infineon BFR340FH6327XTSA1 designed for oscillator applications up to 35 GHz Manufactures
Low noise silicon NPN RF bipolar transistor Infineon BFR340FH6327XTSA1 designed for oscillator applications up to 35 GHz
Model Number: BFR340FH6327XTSA1 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 30nA Pd - Power Dissipation: 75mW
Transition frequency(fT): 14GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
RF Heterojunction Bipolar Transistor Infineon BFP842ESDH6327XTSA1 with ESD Protection and High Gain Manufactures
RF Heterojunction Bipolar Transistor Infineon BFP842ESDH6327XTSA1 with ESD Protection and High Gain
Model Number: BFP842ESDH6327XTSA1 Current - Collector Cutoff: 400nA
Pd - Power Dissipation: 120mW Transition frequency(fT): 57GHz
type: NPN Current - Collector(Ic): -
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits Manufactures
Silicon Germanium Bipolar RF Transistor Infineon BFP650FH6327 Suitable for High Frequency RF Circuits
Model Number: BFP650FH6327 Current - Collector Cutoff: 500nA
Pd - Power Dissipation: 200mW Transition frequency(fT): 46GHz
type: NPN Current - Collector(Ic): 50mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
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Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf Manufactures
Silicon npn rf bipolar transistor Infineon BFR360FH6327XTSA1 offering high gain and low noise for rf
Model Number: BFR360FH6327XTSA1 Emitter-Base Voltage(Vebo): 2V
Current - Collector Cutoff: 30nA Pd - Power Dissipation: 210mW
Transition frequency(fT): 14GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Linearity Bipolar RF Transistor Silicon Germanium Type Infineon BFP650H6327 with SOT343 Package Manufactures
High Linearity Bipolar RF Transistor Silicon Germanium Type Infineon BFP650H6327 with SOT343 Package
Model Number: BFP650H6327 Emitter-Base Voltage(Vebo): 1.2V
Current - Collector Cutoff: 40nA Pd - Power Dissipation: 500mW
Transition frequency(fT): 42GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740FH6327 Suitable for RF Applications Manufactures
Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740FH6327 Suitable for RF Applications
Model Number: BFP740FH6327 Emitter-Base Voltage(Vebo): 1.2V
Current - Collector Cutoff: 40nA Pd - Power Dissipation: 160mW
Transition frequency(fT): 45GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740E6327 for RF Communication Systems Manufactures
Low Noise Silicon Germanium Bipolar RF Transistor Infineon BFP740E6327 for RF Communication Systems
Model Number: BFP740E6327 Emitter-Base Voltage(Vebo): 1.2V
Current - Collector Cutoff: 40nA Pd - Power Dissipation: 160mW
Transition frequency(fT): 44GHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Electronic Component GOODWORK SS8050 NPN Bipolar Transistor with Emitter Base Breakdown Voltage 5V Manufactures
Electronic Component GOODWORK SS8050 NPN Bipolar Transistor with Emitter Base Breakdown Voltage 5V
Model Number: SS8050 Current - Collector Cutoff: 100nA
Emitter-Base Voltage(Vebo): 5V Pd - Power Dissipation: 500mW
Transition frequency(fT): 100MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
NPN Bipolar Transistor Goodwork FMMT619 Featuring Low Equivalent On Resistance for Power Performance Manufactures
NPN Bipolar Transistor Goodwork FMMT619 Featuring Low Equivalent On Resistance for Power Performance
Model Number: FMMT619 Current - Collector Cutoff: 1uA
Emitter-Base Voltage(Vebo): 5V Pd - Power Dissipation: 250mW
Transition frequency(fT): 150MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TTC004B Q for Audio Frequency Amplifier Applications Manufactures
Silicon NPN Epitaxial Bipolar Transistor TOSHIBA TTC004B Q for Audio Frequency Amplifier Applications
Model Number: TTC004B,Q Current - Collector Cutoff: 100nA
DC Current Gain: 140@100mA,5V Transition frequency(fT): 100MHz
Number: 1 NPN Vce Saturation(VCE(sat)): 500mV@0.5A,50mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
TOSHIBA TTA006B Q PNP Bipolar Transistor Featuring Low Output Capacitance for Amplifier Applications Manufactures
TOSHIBA TTA006B Q PNP Bipolar Transistor Featuring Low Output Capacitance for Amplifier Applications
Model Number: TTA006B,Q Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 200nA DC Current Gain: 320@100mA,5V
Transition frequency(fT): 70MHz type: PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
NPN Silicon AF Transistor Array Infineon BC817UPNE6327HTSA1 with Two Internally Isolated Transistors Manufactures
NPN Silicon AF Transistor Array Infineon BC817UPNE6327HTSA1 with Two Internally Isolated Transistors
Model Number: BC817UPNE6327HTSA1 Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 330mW
Transition frequency(fT): 170MHz type: NPN+PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Dual transistor PNP PNP XZT BC856S in SOT 363 package suitable for integrated electronic circuits Manufactures
Dual transistor PNP PNP XZT BC856S in SOT 363 package suitable for integrated electronic circuits
Model Number: BC856S Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 15nA DC Current Gain: 110@2mA,5V
Transition frequency(fT): 100MHz Vce Saturation(VCE(sat)): 300mV@100mA,5mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Switching Circuit Transistor Array Infineon BCR08PNH6327XTSA1 with NPN PNP Silicon Digital Transistors Manufactures
Switching Circuit Transistor Array Infineon BCR08PNH6327XTSA1 with NPN PNP Silicon Digital Transistors
Model Number: BCR08PNH6327XTSA1 Input Resistor: 2.2kΩ
Resistor Ratio: 0.047 Collector - Emitter Voltage VCEO: 50V
Description: Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 250mW Surface Mount SOT-363-6 Mfr. Part #: BCR08PNH6327XTSA1
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High reliability transistor array Infineon BCR22PNH6433 with dual NPN PNP transistors and RoHS compliance Manufactures
High reliability transistor array Infineon BCR22PNH6433 with dual NPN PNP transistors and RoHS compliance
Model Number: BCR22PNH6433 Input Resistor: 22kΩ
Resistor Ratio: 1 Collector - Emitter Voltage VCEO: 50V
Description: Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount SOT-363 Mfr. Part #: BCR22PNH6433
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power switch dual digital transistors with integrated resistors JSCJ UMC3N series package type SOT353 Manufactures
Power switch dual digital transistors with integrated resistors JSCJ UMC3N series package type SOT353
Model Number: UMC3N Output Voltage(VO(on)): 300mV
Input Resistor: 13kΩ Resistor Ratio: 1
Collector - Emitter Voltage VCEO: 50V Description: Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-353-5
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Digital Transistor Featuring Integrated Base Resistors LRC LMUN2134LT1G Suitable for Applications Manufactures
Digital Transistor Featuring Integrated Base Resistors LRC LMUN2134LT1G Suitable for Applications
Model Number: LMUN2134LT1G Output Voltage(VO(on)): -
Input Resistor: 28.6kΩ Resistor Ratio: -
Collector - Emitter Voltage VCEO: 50V Description: Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 246mW Surface Mount SOT-23
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Digital transistor onsemi SMUN5335DW1T1G with monolithic bias network designed to reduce component count Manufactures
Digital transistor onsemi SMUN5335DW1T1G with monolithic bias network designed to reduce component count
Model Number: SMUN5335DW1T1G Output Voltage(VO(on)): 200mV
Input Resistor: 2.2kΩ Resistor Ratio: 0.047
Collector - Emitter Voltage VCEO: 50V Description: 50V SC-88 Single, Pre-Biased Bipolar Transistors RoHS
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Compact bias resistor transistor onsemi MUN5237DW1T1G for circuit design and reduced assembly time Manufactures
Compact bias resistor transistor onsemi MUN5237DW1T1G for circuit design and reduced assembly time
Model Number: MUN5237DW1T1G Output Voltage(VO(on)): 200mV
Input Resistor: 47kΩ Resistor Ratio: 2.1
Collector - Emitter Voltage VCEO: 50V Description: Pre-Biased Bipolar Transistor (BJT) 50V 100mA 187mW Surface Mount SOT-363
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Monolithic bias network transistor onsemi NSBC144EDXV6T1G offering Pb free and RoHS compliant solution Manufactures
Monolithic bias network transistor onsemi NSBC144EDXV6T1G offering Pb free and RoHS compliant solution
Model Number: NSBC144EDXV6T1G Output Voltage(VO(on)): 200mV
Input Resistor: 47kΩ Resistor Ratio: 1
Collector - Emitter Voltage VCEO: 50V Description: Pre-Biased Bipolar Transistor (BJT) 50V 100mA 500mW Surface Mount SOT-563
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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