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On Semiconductor Fairchild Single Gate

on semiconductor fairchild single gate

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N Channel MOSFET for Power Switch Circuits BORN BMF4N65 Featuring Fast Switching and Low Gate Charge Manufactures
N Channel MOSFET for Power Switch Circuits BORN BMF4N65 Featuring Fast Switching and Low Gate Charge
Model Number: BMF4N65 Drain to Source Voltage: 650V
Configuration: - Current - Continuous Drain(Id): 4A
Operating Temperature -: - RDS(on): 2.8Ω@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Gate Charge P Channel MOSFET High Diode BSS84 Designed For Portable Devices And DC DC Converters Manufactures
Low Gate Charge P Channel MOSFET High Diode BSS84 Designed For Portable Devices And DC DC Converters
Model Number: BSS84 Drain to Source Voltage: 50V
Current - Continuous Drain(Id): 130mA RDS(on): 1.9Ω@4.5V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1.4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
20V N Channel MOSFET Featuring Low Gate Charge and ESD Protection High Diode 2300 for Load Switching Manufactures
20V N Channel MOSFET Featuring Low Gate Charge and ESD Protection High Diode 2300 for Load Switching
Model Number: 2300 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 4.5A RDS(on): 28mΩ@1.8V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
650V N Channel Super Junction Power MOSFET with Low Gate Charge and Improved dvdt HUAKE HCD65R280-S2 Manufactures
650V N Channel Super Junction Power MOSFET with Low Gate Charge and Improved dvdt HUAKE HCD65R280-S2
Model Number: HCD65R280-S2 Drain to Source Voltage: 650V
Current - Continuous Drain(Id): 15A RDS(on): 240mΩ@10V
Gate Threshold Voltage (Vgs(th)): 4.5V Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Control with HUAKE SMT20N60 600V N Channel MOSFET Featuring Low Gate Charge and High Drain Current Manufactures
Power Control with HUAKE SMT20N60 600V N Channel MOSFET Featuring Low Gate Charge and High Drain Current
Model Number: SMT20N60 Drain to Source Voltage: 600V
Current - Continuous Drain(Id): 20A Operating Temperature -: -55℃~+150℃
RDS(on): 350mΩ@10V,10A Gate Threshold Voltage (Vgs(th)): 2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
100V N Channel MOSFET HUAKE HSD50N10 with Low Gate Charge and High Frequency Switching Capability Manufactures
100V N Channel MOSFET HUAKE HSD50N10 with Low Gate Charge and High Frequency Switching Capability
Model Number: HSD50N10 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 50A RDS(on): 17mΩ@10V
Gate Threshold Voltage (Vgs(th)): 2.5V@250uA Type: N-Channel
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Semiconductor HXY MOSFET IGW40N65F5-HXY with 650V Collector Emitter Voltage and 70A Collector Current Manufactures
Power Semiconductor HXY MOSFET IGW40N65F5-HXY with 650V Collector Emitter Voltage and 70A Collector Current
Model Number: IGW40N65F5-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power semiconductor device HXY MOSFET IXXH40N65B4H1-HXY suitable for UPS EV Chargers and solar inverters Manufactures
Power semiconductor device HXY MOSFET IXXH40N65B4H1-HXY suitable for UPS EV Chargers and solar inverters
Model Number: IXXH40N65B4H1-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Semiconductor HXY MOSFET IRGP4790D-EPBF-HXY 650V 75A IGBT Module Suitable for UPS EV Chargers Manufactures
Power Semiconductor HXY MOSFET IRGP4790D-EPBF-HXY 650V 75A IGBT Module Suitable for UPS EV Chargers
Model Number: IRGP4790D-EPBF-HXY Pd - Power Dissipation: 330W
Td(off): 130ns Td(on): 20ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 23pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Semiconductor Device HXY MOSFET IXYH40N65C3H1 HXY Suitable for EV Charger and Renewable Energy Systems Manufactures
Power Semiconductor Device HXY MOSFET IXYH40N65C3H1 HXY Suitable for EV Charger and Renewable Energy Systems
Model Number: IXYH40N65C3H1-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power semiconductor HXY MOSFET DGTD120T40S1PT-HXY with enhanced switching performance and durability Manufactures
Power semiconductor HXY MOSFET DGTD120T40S1PT-HXY with enhanced switching performance and durability
Model Number: DGTD120T40S1PT-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Energy Ignition IGBT onsemi ISL9V3040D3ST-F085C with Logic Level Gate Drive and Pb-Free RoHS Compliance Manufactures
High Energy Ignition IGBT onsemi ISL9V3040D3ST-F085C with Logic Level Gate Drive and Pb-Free RoHS Compliance
Model Number: ISL9V3040D3ST-F085C Td(off): 4.8us
Pd - Power Dissipation: 150W Td(on): 700ns
Collector-Emitter Breakdown Voltage (Vces): 400V Input Capacitance(Cies): -
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High speed pulsed amplifier dual N Channel MOSFET Central CMLDM7002AG TR PBFREE with low gate charge Manufactures
High speed pulsed amplifier dual N Channel MOSFET Central CMLDM7002AG TR PBFREE with low gate charge
Model Number: CMLDM7002AG TR PBFREE Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 280mA Operating Temperature -: -65℃~+150℃@(Tj)
RDS(on): 2Ω@10V,500mA Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power semiconductor device FUXINSEMI C2M0040120D with low on resistance and power handling capabilities Manufactures
Power semiconductor device FUXINSEMI C2M0040120D with low on resistance and power handling capabilities
Model Number: C2M0040120D Drain to Source Voltage: 1.2kV
Current - Continuous Drain(Id): 55A Operating Temperature -: -55℃~+150℃
RDS(on): 52mΩ Gate Threshold Voltage (Vgs(th)): 4V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds Manufactures
IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds
Brand Name: IXYS Model Number: IXFN38N100Q2
Minimum Order Quantity: 1pcs Delivery Time: 1day
Payment Terms: T/T, Western Union Place of Origin: USA
Wisdtech Technology Co.,Limited [Guangdong,China]
Verified Supplier
Power semiconductor device Infineon IKW50N65EH5 featuring TRENCHSTOP 5 technology and RAPID 1 diode Manufactures
Power semiconductor device Infineon IKW50N65EH5 featuring TRENCHSTOP 5 technology and RAPID 1 diode
Model Number: IKW50N65EH5 Td(off): 172ns
Pd - Power Dissipation: 275W Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 12pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability Manufactures
High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability
Model Number: RJH1CV7DPQ-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Semiconductor HXY MOSFET IGW40T120FKSA1-HXY with TO247 Package and 160A Pulsed Collector Current Manufactures
Power Semiconductor HXY MOSFET IGW40T120FKSA1-HXY with TO247 Package and 160A Pulsed Collector Current
Model Number: IGW40T120FKSA1-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power semiconductor device JIAENSEMI JNG20T65KS trench IGBT with 650 volt collector emitter voltage Manufactures
Power semiconductor device JIAENSEMI JNG20T65KS trench IGBT with 650 volt collector emitter voltage
Model Number: JNG20T65KS Td(off): 71ns
Pd - Power Dissipation: 139W Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 7.5pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power semiconductor JSCJ CGWT40N120F2KAD IGBT with TO-247 package and positive temperature coefficient Manufactures
Power semiconductor JSCJ CGWT40N120F2KAD IGBT with TO-247 package and positive temperature coefficient
Model Number: CGWT40N120F2KAD Td(off): 171ns
Pd - Power Dissipation: 357W Td(on): 41ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 27.5pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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