n type silicon wafer for power devices

...Type Silicon Wafer for IC and Power Devices Introduction of N-Type Silicon Wafer: An N-type Silicon Wafer is a high-purity, single-crystal silicon substrate doped with phosphorus, arsenic, or antimony atoms to introduce extra free electrons as the majority charge carriers.This doping process gives the wafer negative electrical conductivity (N-type), making it ideal for high-performance electronic, power...

...silicon carbide wafer 4H-P type on axis 0°Used to manufacture high power devices 4H-P type silicon carbide substrate is a semiconductor material with a hexagonal lattice structure, and P-type conductivity is obtained by a specific doping process (such as doping aluminum and other elements). Such substrates typically have high doping concentrations and low resistivity, making them ideal for manufacturing high-power devices

... generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and