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N Channel Mosfet Module

n channel mosfet module

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P channel MOSFET HUASHUO HSM05P15 offering 150V drain source voltage and low gate charge for control Manufactures
P channel MOSFET HUASHUO HSM05P15 offering 150V drain source voltage and low gate charge for control
Model Number: HSM05P15 Drain to Source Voltage: 150V
Current - Continuous Drain(Id): 5A Operating Temperature -: -55℃~+150℃
RDS(on): 345mΩ@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trenched N Channel MOSFET HUASHUO HSS6014 with High Cell Density and Excellent CdV dt Effect Decline Manufactures
Trenched N Channel MOSFET HUASHUO HSS6014 with High Cell Density and Excellent CdV dt Effect Decline
Model Number: HSS6014 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 6A Operating Temperature -: -55℃~+150℃
RDS(on): 40mΩ@10V,6A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density N Channel MOSFET HUASHUO HSU30N02 Designed for Power Management and Fast Switching Manufactures
High Cell Density N Channel MOSFET HUASHUO HSU30N02 Designed for Power Management and Fast Switching
Model Number: HSU30N02 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 30A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 8mΩ@4.5V,30A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trenched N channel MOSFET HUASHUO HSH0026 for synchronous buck converter applications Manufactures
High cell density trenched N channel MOSFET HUASHUO HSH0026 for synchronous buck converter applications
Model Number: HSH0026 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 50A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 16mΩ@10V,9A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching N Channel MOSFET HUASHUO HSU6008 Featuring High Cell Density Trench and Excellent RDS Manufactures
Fast Switching N Channel MOSFET HUASHUO HSU6008 Featuring High Cell Density Trench and Excellent RDS
Model Number: HSU6008 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 10A Operating Temperature -: -55℃~+150℃
RDS(on): 90mΩ@10V,10A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET HUASHUO HSL03N20 Trenched Technology Low Gate Charge Fast Switching Device Manufactures
N Channel MOSFET HUASHUO HSL03N20 Trenched Technology Low Gate Charge Fast Switching Device
Model Number: HSL03N20 Drain to Source Voltage: 200V
Current - Continuous Drain(Id): 1.5A Operating Temperature -: -55℃~+150℃
RDS(on): 600mΩ@4.5V,1A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power management N Channel MOSFET HUASHUO HSBA90N02 featuring super low gate charge and performance Manufactures
Power management N Channel MOSFET HUASHUO HSBA90N02 featuring super low gate charge and performance
Model Number: HSBA90N02 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 90A RDS(on): 4.5mΩ@2.5V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET HUASHUO HSP0016 with High Cell Density Trench Technology and Full Functional Approval Manufactures
N Channel MOSFET HUASHUO HSP0016 with High Cell Density Trench Technology and Full Functional Approval
Model Number: HSP0016 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 27A Operating Temperature -: -55℃~+150℃
RDS(on): 47mΩ@10V,20A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N channel MOSFET HUASHUO HSH30N15A featuring trench technology and low gate charge for power supply designs Manufactures
N channel MOSFET HUASHUO HSH30N15A featuring trench technology and low gate charge for power supply designs
Model Number: HSH30N15A Drain to Source Voltage: 150V
Current - Continuous Drain(Id): 30A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 40mΩ@10V,10A Gate Threshold Voltage (Vgs(th)): 4V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density N Channel MOSFET HUASHUO HSU16N25 with 250V Drain Source Voltage and Excellent RDS Manufactures
High Cell Density N Channel MOSFET HUASHUO HSU16N25 with 250V Drain Source Voltage and Excellent RDS
Model Number: HSU16N25 Drain to Source Voltage: 250V
Current - Continuous Drain(Id): 16A Operating Temperature -: -55℃~+150℃
RDS(on): 250mΩ@10V,8A Gate Threshold Voltage (Vgs(th)): 4V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
RoHS compliant N channel MOSFET HUASHUO HSSN3134 with fast switching speed and super low gate charge Manufactures
RoHS compliant N channel MOSFET HUASHUO HSSN3134 with fast switching speed and super low gate charge
Model Number: HSSN3134 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 1A Operating Temperature -: -55℃~+150℃
RDS(on): 200mΩ@4.5V,1A Gate Threshold Voltage (Vgs(th)): 1.1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density Trench N Channel MOSFET HUASHUO HSU50N06 Suitable for Fast Switching Applications Manufactures
High Cell Density Trench N Channel MOSFET HUASHUO HSU50N06 Suitable for Fast Switching Applications
Model Number: HSU50N06 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 55A Operating Temperature -: -55℃~+150℃
RDS(on): 16mΩ@10V,20A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density N channel MOSFET HSK10N06 suitable for demanding industrial switching applications Manufactures
High cell density N channel MOSFET HSK10N06 suitable for demanding industrial switching applications
Model Number: HSK10N06 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 10A RDS(on): 40mΩ@10V,10A
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 3V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trench Technology N Channel MOSFET HUASHUO HSBA90N15 with 150V Drain Source Voltage and Green Device Manufactures
Trench Technology N Channel MOSFET HUASHUO HSBA90N15 with 150V Drain Source Voltage and Green Device
Model Number: HSBA90N15 Drain to Source Voltage: 150V
Current - Continuous Drain(Id): 75A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 9.8mΩ@10V,18A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N channel MOSFET HUASHUO HSH3018B designed for synchronous buck converter circuits and fast switching Manufactures
N channel MOSFET HUASHUO HSH3018B designed for synchronous buck converter circuits and fast switching
Model Number: HSH3018B Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 205A Operating Temperature -: -55℃~+150℃
RDS(on): 2.4mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N channel MOSFET HUASHUO HSCE2530 featuring high cell density trench technology and low RDSON for power conversion Manufactures
N channel MOSFET HUASHUO HSCE2530 featuring high cell density trench technology and low RDSON for power conversion
Model Number: HSCE2530 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 50A Operating Temperature -: -55℃~+150℃
RDS(on): 2mΩ@4.5V,20A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast switching N channel MOSFET HUASHUO HSS3N06 with advanced trench technology and low gate charge Manufactures
Fast switching N channel MOSFET HUASHUO HSS3N06 with advanced trench technology and low gate charge
Model Number: HSS3N06 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 3.2A Operating Temperature -: -55℃~+150℃
RDS(on): 95mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
40V 100A N Channel MOSFET HUASHUO HSBA4048 Ideal for Synchronous Rectification and Power Conversion Manufactures
40V 100A N Channel MOSFET HUASHUO HSBA4048 Ideal for Synchronous Rectification and Power Conversion
Model Number: HSBA4048 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 100A Operating Temperature -: -55℃~+150℃
RDS(on): 1.8mΩ@10V,20A Gate Threshold Voltage (Vgs(th)): 1.6V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N channel mosfet huashuo hsu4006 featuring trench technology and low gate charge for power conversion Manufactures
N channel mosfet huashuo hsu4006 featuring trench technology and low gate charge for power conversion
Model Number: HSU4006 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 60A Operating Temperature -: -55℃~+150℃
RDS(on): 7.5mΩ@10V,12A Gate Threshold Voltage (Vgs(th)): -
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Durable Huixin H10N65F 650V N Channel MOSFET designed for power conversion in SMPS and charger units Manufactures
Durable Huixin H10N65F 650V N Channel MOSFET designed for power conversion in SMPS and charger units
Model Number: H10N65F Drain to Source Voltage: 650V
Current - Continuous Drain(Id): 10A RDS(on): 800mΩ@10V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 4V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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