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Mosfet Load Switch

mosfet load switch

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HXY MOSFET HXY3407AI P Channel MOSFET Offering Low Gate Threshold and Excellent Switching Performance Manufactures
HXY MOSFET HXY3407AI P Channel MOSFET Offering Low Gate Threshold and Excellent Switching Performance
Model Number: HXY3407AI Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 4.1A Operating Temperature -: -55℃~+150℃
RDS(on): 56mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
P channel MOSFET Bruckewell MS34P07 featuring advanced trench technology and green device compliance Manufactures
P channel MOSFET Bruckewell MS34P07 featuring advanced trench technology and green device compliance
Model Number: MS34P07 Configuration: -
Drain to Source Voltage: 30V Current - Continuous Drain(Id): 4.1A
RDS(on): 75mΩ@4.5V Operating Temperature -: -55℃~+150℃
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Complementary Enhancement MOSFET BLUE ROCKET BRCS250C03YA Designed for Switching and Power Dissipation Manufactures
Complementary Enhancement MOSFET BLUE ROCKET BRCS250C03YA Designed for Switching and Power Dissipation
Model Number: BRCS250C03YA Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 20A RDS(on): 25mΩ@10V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Switching MOSFET BLUE ROCKET BRCS4606HSC Complementary Enhancement Type for DC DC Converter Circuits Manufactures
Switching MOSFET BLUE ROCKET BRCS4606HSC Complementary Enhancement Type for DC DC Converter Circuits
Model Number: BRCS4606HSC Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 6.9A RDS(on): 70mΩ@10V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 2.4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching P channel 20V MOSFET with Low Gate Charge and Reduced Cdv dt Effect FETek FKUC2301 Manufactures
Fast Switching P channel 20V MOSFET with Low Gate Charge and Reduced Cdv dt Effect FETek FKUC2301
Model Number: FKUC2301 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 3.3A Operating Temperature -: -55℃~+150℃
RDS(on): 135mΩ@2.5V,2A Gate Threshold Voltage (Vgs(th)): 600mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
30V P channel MOSFET HUASHUO AO3401A fast switching device with trench technology and low gate charge Manufactures
30V P channel MOSFET HUASHUO AO3401A fast switching device with trench technology and low gate charge
Model Number: AO3401A Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 4.2A Operating Temperature -: -55℃~+150℃
RDS(on): 54mΩ@4.5V,3A Gate Threshold Voltage (Vgs(th)): 500mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
100V P channel MOSFET HUASHUO HSS0127 trench technology super low gate charge switching component Manufactures
100V P channel MOSFET HUASHUO HSS0127 trench technology super low gate charge switching component
Model Number: HSS0127 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 900mA Operating Temperature -: -55℃~+150℃
RDS(on): 650mΩ@10V,800mA Gate Threshold Voltage (Vgs(th)): -
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
HSL2N15 Trenched N Channel MOSFET Offering High Cell Density and Low Gate Charge for Power Switching Manufactures
HSL2N15 Trenched N Channel MOSFET Offering High Cell Density and Low Gate Charge for Power Switching
Model Number: HSL2N15 Drain to Source Voltage: 150V
Current - Continuous Drain(Id): 2A RDS(on): 210mΩ@10V
Operating Temperature -: -55℃~+150℃ Gate Threshold Voltage (Vgs(th)): 1.8V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power switching MOSFET HUASHUO AO3400A with super low gate charge and excellent dv dt effect decline Manufactures
Power switching MOSFET HUASHUO AO3400A with super low gate charge and excellent dv dt effect decline
Model Number: AO3400A Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 5.2A Operating Temperature -: -55℃~+150℃
RDS(on): 27mΩ@4.5V,5A Gate Threshold Voltage (Vgs(th)): 850mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
P channel MOSFET HUASHUO HSS3401A fast switching 30V device with trench technology and low gate charge Manufactures
P channel MOSFET HUASHUO HSS3401A fast switching 30V device with trench technology and low gate charge
Model Number: HSS3401A Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 4.3A Operating Temperature -: -55℃~+150℃
RDS(on): 53mΩ@4.5V,3A Gate Threshold Voltage (Vgs(th)): 500mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast switching MOSFET HUASHUO HSL0107 P channel 100V with high cell density trench technology and low RDS Manufactures
Fast switching MOSFET HUASHUO HSL0107 P channel 100V with high cell density trench technology and low RDS
Model Number: HSL0107 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 1.5A Operating Temperature -: -55℃~+150℃
RDS(on): 650mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
power switching P channel MOSFET HUASHUO HSS2P10 featuring trench technology and compact SOT 23 package Manufactures
power switching P channel MOSFET HUASHUO HSS2P10 featuring trench technology and compact SOT 23 package
Model Number: HSS2P10 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 2A Operating Temperature -: -55℃~+150℃
RDS(on): 320mΩ@10V,2A Gate Threshold Voltage (Vgs(th)): 3V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast switching p channel mosfet huashuo hss6107 60 volt with green device compliance and low gate charge Manufactures
Fast switching p channel mosfet huashuo hss6107 60 volt with green device compliance and low gate charge
Model Number: HSS6107 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 1.7A Operating Temperature -: -55℃~+150℃
RDS(on): 180mΩ@4.5V,1A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
200V fast switching MOSFET HUASHUO HSL3P20 P channel device with trench technology and low gate charge Manufactures
200V fast switching MOSFET HUASHUO HSL3P20 P channel device with trench technology and low gate charge
Model Number: HSL3P20 Drain to Source Voltage: 200V
Current - Continuous Drain(Id): 3A Operating Temperature -: -55℃~+150℃
RDS(on): 2.4Ω@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low gate charge P channel MOSFET HUASHUO HSS2P20 200V trench technology designed for switching circuits Manufactures
Low gate charge P channel MOSFET HUASHUO HSS2P20 200V trench technology designed for switching circuits
Model Number: HSS2P20 Drain to Source Voltage: 200V
Current - Continuous Drain(Id): 2A Operating Temperature -: -55℃~+150℃
RDS(on): 2.4Ω@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching N Channel MOSFET HUASHUO HSS0008 Featuring Advanced Trench Technology and Performance Manufactures
Fast Switching N Channel MOSFET HUASHUO HSS0008 Featuring Advanced Trench Technology and Performance
Model Number: HSS0008 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 1.2A Operating Temperature -: -55℃~+150℃
RDS(on): 310mΩ@4.5V,0.5A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
P channel MOSFET HUASHUO HSS3401 featuring 30V drain source voltage and super low gate charge for power switching Manufactures
P channel MOSFET HUASHUO HSS3401 featuring 30V drain source voltage and super low gate charge for power switching
Model Number: HSS3401 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 4.2A Operating Temperature -: -55℃~+150℃
RDS(on): 60mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.3V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast switching P channel MOSFET HUASHUO HSU4P25 featuring trench technology and green certification Manufactures
Fast switching P channel MOSFET HUASHUO HSU4P25 featuring trench technology and green certification
Model Number: HSU4P25 Drain to Source Voltage: 250V
Current - Continuous Drain(Id): 4A Operating Temperature -: -55℃~+150℃
RDS(on): 4Ω@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low Gate Charge N Channel MOSFET HUASHUO IRLML0060 Featuring Trenched Cell Technology for Switching Manufactures
Low Gate Charge N Channel MOSFET HUASHUO IRLML0060 Featuring Trenched Cell Technology for Switching
Model Number: IRLML0060 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 3A Operating Temperature -: -55℃~+150℃
RDS(on): 80mΩ@10V,2A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast Switching N Channel MOSFET HSK3400 with Excellent RDS ON and High Cell Density Trench Technology Manufactures
Fast Switching N Channel MOSFET HSK3400 with Excellent RDS ON and High Cell Density Trench Technology
Model Number: HSK3400 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 6A Operating Temperature -: -55℃~+150℃
RDS(on): 26mΩ@4.5V,5A Gate Threshold Voltage (Vgs(th)): 1.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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