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Led Gallium Arsenide Substrates

led gallium arsenide substrates

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(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density Manufactures
(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
A Plane Si-Doped GaN Freestanding Hexagonal GaN Crystal Substrate Manufactures
A Plane Si-Doped GaN Freestanding Hexagonal GaN Crystal Substrate
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
10*10mm2 N-GaN Freestanding GaN Substrate, Epi-Ready With Double Side Polished Manufactures
10*10mm2 N-GaN Freestanding GaN Substrate, Epi-Ready With Double Side Polished
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
(20-21) Plane Semi-Polar N-GaN Freestanding GaN Crystal Substrate Manufactures
(20-21) Plane Semi-Polar N-GaN Freestanding GaN Crystal Substrate
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
A Plane N-GaN Freestanding GaN Substrate Manufactures
A Plane N-GaN Freestanding GaN Substrate
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
10*10mm2 Si-GaN Freestanding GaN Substrate For Iii-Nitride LDs Manufactures
10*10mm2 Si-GaN Freestanding GaN Substrate For Iii-Nitride LDs
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy Manufactures
(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
(10-11) Crystal Plane Si-GaN Freestanding GaN Substrate -Powerway Wafer Manufactures
(10-11) Crystal Plane Si-GaN Freestanding GaN Substrate -Powerway Wafer
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
10*10mm2 U-GaN Free-Standing GaN Single-Crystal Substrate Manufactures
10*10mm2 U-GaN Free-Standing GaN Single-Crystal Substrate
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate Manufactures
(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
A Plane U-GaN Freestanding Hvpe-GaN Substrate For Iii-Nitride Devices Manufactures
A Plane U-GaN Freestanding Hvpe-GaN Substrate For Iii-Nitride Devices
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
(10-11) Plane N-GaN Freestanding GaN Substrate For Nonodevices Manufactures
(10-11) Plane N-GaN Freestanding GaN Substrate For Nonodevices
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes(SBDs) Manufactures
Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes(SBDs)
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
2 Inch Free Standing U-GaN Bulk GaN Substrates,Epi-Ready Grade For GaN Laser Diode Manufactures
2 Inch Free Standing U-GaN Bulk GaN Substrates,Epi-Ready Grade For GaN Laser Diode
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
4 Inch Freestanding GaN Substrates As III-Nitride Semiconductor Materials Manufactures
4 Inch Freestanding GaN Substrates As III-Nitride Semiconductor Materials
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC Manufactures
2" Sapphire Based GaN Templates Semiconductor Substrate GaN-On-SiC
Brand Name: ZMKJ Model Number: 4inch GaN-sapphire
Minimum Order Quantity: 2pcs Delivery Time: in 20days
Payment Terms: T/T, Western Union, paypal Place of Origin: China
SHANGHAI FAMOUS TRADE CO.,LTD [Shanghai,China]
Verified Supplier
2 Inch Si-Doped GaN Epitaxial Materials On Sapphire For Gallium Nitride Devices Manufactures
2 Inch Si-Doped GaN Epitaxial Materials On Sapphire For Gallium Nitride Devices
Brand Name: PAM-XIAMEN Minimum Order Quantity: 1-10,000pcs
Delivery Time: 5-50 working days Payment Terms: T/T
Place of Origin: China Price: By Case
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. [Fujian,China]
Active Member
300mm Gallium Nitride Wafer GaN-ON-Silicon For Power Micro LED Manufactures
300mm Gallium Nitride Wafer GaN-ON-Silicon For Power Micro LED
Brand Name: ZMSH Certification: rohs
Model Number: 6/8/12INCH GaN-ON-silicon Minimum Order Quantity: 1pcs
Delivery Time: 2-4weeks Payment Terms: T/T, Western Union
SHANGHAI FAMOUS TRADE CO.,LTD [Shanghai,China]
Verified Supplier
YIG SGGG Substrates Wafer Manufactures
YIG SGGG Substrates Wafer
Brand Name: Crystro Certification: SGS/ROHS
Model Number: CR200629-02 Minimum Order Quantity: 1pc
Delivery Time: 4-5weeks Payment Terms: T/T, Western Union, MoneyGram, Paypal
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. [Anhui,China]
Verified Supplier
DIA 4 Inch SGGG Wafer YIG Film Substrates Manufactures
DIA 4 Inch SGGG Wafer YIG Film Substrates
Brand Name: Crystro Certification: SGS/ROHS/REACH
Model Number: CR251027-01 Minimum Order Quantity: 5pc
Delivery Time: 4-5weeks Payment Terms: T/T, Western Union, MoneyGram, Paypal
ANHUI CRYSTRO CRYSTAL MATERIALS Co., Ltd. [Anhui,China]
Verified Supplier
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