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Igbt Vs Mosfet

igbt vs mosfet

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Industrial photocoupler LITEON LTV-314NW-TA1 designed for driving power IGBTs and MOSFETs in power supply systems Manufactures
Industrial photocoupler LITEON LTV-314NW-TA1 designed for driving power IGBTs and MOSFETs in power supply systems
Model Number: LTV-314NW-TA1 Power Dissipation: 295mW
Low Level Delay Time: 500ns High Level Delay Time: 500ns
Input threshold current: 5mA Voltage - Forward(Vf): 1.8V
Beijing Silk Road Enterprise Management Services Co., Ltd. [Beijing,China]
Verified Supplier
Power IGBT HXY MOSFET IXXX200N65B4-HXY 650V 160A Low Saturation Voltage for Solar Inverters and UPS Manufactures
Power IGBT HXY MOSFET IXXX200N65B4-HXY 650V 160A Low Saturation Voltage for Solar Inverters and UPS
Model Number: IXXX200N65B4-HXY Td(off): 379ns
Pd - Power Dissipation: 1kW Td(on): 94ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 70pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Voltage IGBT HXY MOSFET IRG7PH50K10D-EPBF-HXY for Solar Inverters and Energy Storage Solutions Manufactures
High Voltage IGBT HXY MOSFET IRG7PH50K10D-EPBF-HXY for Solar Inverters and Energy Storage Solutions
Model Number: IRG7PH50K10D-EPBF-HXY Td(off): 195ns
Pd - Power Dissipation: 417W Td(on): 48ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 35pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
650V Collector Emitter Voltage IGBT HXY MOSFET IXYH75N65C3D1-HXY with TO247 Package and Halogen Free Manufactures
650V Collector Emitter Voltage IGBT HXY MOSFET IXYH75N65C3D1-HXY with TO247 Package and Halogen Free
Model Number: IXYH75N65C3D1-HXY Pd - Power Dissipation: 250W
Td(off): 124ns Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
650 Volt 70 Amp IGBT HXY MOSFET MIW40N65RA-BP-HXY TO247 Package Designed for Solar Inverters and UPS Manufactures
650 Volt 70 Amp IGBT HXY MOSFET MIW40N65RA-BP-HXY TO247 Package Designed for Solar Inverters and UPS
Model Number: MIW40N65RA-BP-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
IGBT HXY MOSFET RGS00TS65HRC11-HXY featuring low saturation voltage and low electromagnetic interference Manufactures
IGBT HXY MOSFET RGS00TS65HRC11-HXY featuring low saturation voltage and low electromagnetic interference
Model Number: RGS00TS65HRC11-HXY Pd - Power Dissipation: 250W
Td(off): 110ns Td(on): 17ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.916nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability Manufactures
High current IGBT HXY MOSFET RGS80TS65HRC11-HXY with low gate charge and easy paralleling capability
Model Number: RGS80TS65HRC11-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability Manufactures
High Current IGBT HXY MOSFET RJH1CV7DPQ-HXY Semiconductor Device With Avalanche Energy Capability
Model Number: RJH1CV7DPQ-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Robust IGBT HXY MOSFET AOK75B65H1 featuring low saturation voltage and high DC collector current for EV charger modules Manufactures
Robust IGBT HXY MOSFET AOK75B65H1 featuring low saturation voltage and high DC collector current for EV charger modules
Model Number: AOK75B65H1 Pd - Power Dissipation: 330W
Td(off): 130ns Td(on): 20ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 23pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High current IGBT HXY MOSFET STGWA40HP65FB-HXY designed for UPS and renewable energy systems applications Manufactures
High current IGBT HXY MOSFET STGWA40HP65FB-HXY designed for UPS and renewable energy systems applications
Model Number: STGWA40HP65FB-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Input Capacitance(Cies): 1.52nF@25V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trench and Field Stop Technology Based IGBT HXY MOSFET FGH40T120SMD-F155-HXY for Energy Management Manufactures
Trench and Field Stop Technology Based IGBT HXY MOSFET FGH40T120SMD-F155-HXY for Energy Management
Model Number: FGH40T120SMD-F155-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
high voltage IGBT HXY MOSFET APT35GP120BG-HXY suitable for EV chargers and solar power inverter systems Manufactures
high voltage IGBT HXY MOSFET APT35GP120BG-HXY suitable for EV chargers and solar power inverter systems
Model Number: APT35GP120BG-HXY Td(off): 195ns
Pd - Power Dissipation: 417W Td(on): 48ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 35pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Durable Industrial IGBT HXY MOSFET IKW60N60H3-HXY Featuring RoHS Compliance and TO-247 Package Design Manufactures
Durable Industrial IGBT HXY MOSFET IKW60N60H3-HXY Featuring RoHS Compliance and TO-247 Package Design
Model Number: IKW60N60H3-HXY Pd - Power Dissipation: 250W
Td(off): 124ns Td(on): 24ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
650V 75A Power IGBT HXY MOSFET IXYH100N65C3-HXY TO-247 Package Suitable for Power Electronics Manufactures
650V 75A Power IGBT HXY MOSFET IXYH100N65C3-HXY TO-247 Package Suitable for Power Electronics
Model Number: IXYH100N65C3-HXY Pd - Power Dissipation: 330W
Td(off): 130ns Td(on): 20ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 23pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance Manufactures
High temperature IGBT HXY MOSFET GWA40MS120DF4AG-HXY with 40 amp collector current and RoHS compliance
Model Number: GWA40MS120DF4AG-HXY Pd - Power Dissipation: 441W
Td(off): 262ns Td(on): 25ns
Collector-Emitter Breakdown Voltage (Vces): 1.2kV Reverse Transfer Capacitance (Cres): 93pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power IGBT HXY MOSFET NGTB40N65FL2WG-HXY with Low EMI and Maximum Junction Temperature of 175 Celsius Manufactures
Power IGBT HXY MOSFET NGTB40N65FL2WG-HXY with Low EMI and Maximum Junction Temperature of 175 Celsius
Model Number: NGTB40N65FL2WG-HXY Pd - Power Dissipation: 250W
Td(off): 136ns Td(on): 26ns
Collector-Emitter Breakdown Voltage (Vces): 650V Reverse Transfer Capacitance (Cres): 11pF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
1 Amp Output Current Gate Drive Optocoupler KTP HCPL-3150-C1H0 Suitable for IGBT and MOSFET Drivers Manufactures
1 Amp Output Current Gate Drive Optocoupler KTP HCPL-3150-C1H0 Suitable for IGBT and MOSFET Drivers
Model Number: HCPL-3150-C1H0 Power Dissipation: 250mW
Output Current: 1.5A Operating Temperature: -40℃~+100℃
Propagation Delay(tpd): 500ns;500ns Isolation voltage(Vrms): 5kV
Beijing Silk Road Enterprise Management Services Co., Ltd. [Beijing,China]
Verified Supplier
Equivalent 30f124 Transistor 30f124 GT30f124 30g124 GT30g124 IGBT Transistor MOSFET LCD Transistor TO-220F Manufactures
Equivalent 30f124 Transistor 30f124 GT30f124 30g124 GT30g124 IGBT Transistor MOSFET LCD Transistor TO-220F
Brand Name: Original Model Number: GT30f124
Minimum Order Quantity: 10 Delivery Time: 1-7 days
Payment Terms: T/T, Western Union, Paypal,Alibaba trade order Place of Origin: US
Shenzhen Quanyuantong Electronics Co., Ltd.
Verified Supplier
Automotive IGBT Modules VS-ENY050C60 600V Full Bridge MOSFET Diode Power Modules Manufactures
Automotive IGBT Modules VS-ENY050C60 600V Full Bridge MOSFET Diode Power Modules
Brand Name: Original Factory Certification: Lead free / RoHS Compliant
Model Number: VS-ENY050C60 Minimum Order Quantity: 10
Delivery Time: 3-5 work days Payment Terms: T/T
ShenZhen Mingjiada Electronics Co.,Ltd. [China]
Verified Supplier
Automotive IGBT Modules VS-FC420SA10 Single Switch Power MOSFET Modules SOT-227-4 Manufactures
Automotive IGBT Modules VS-FC420SA10 Single Switch Power MOSFET Modules SOT-227-4
Brand Name: Original Factory Certification: Lead free / RoHS Compliant
Model Number: VS-FC420SA10 Minimum Order Quantity: 10
Delivery Time: 3-5 work days Payment Terms: T/T
ShenZhen Mingjiada Electronics Co.,Ltd. [China]
Verified Supplier
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