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High voltage switching MOSFET HUAKE SMD2N65 650V N Channel for power supply and correction circuits Manufactures
High voltage switching MOSFET HUAKE SMD2N65 650V N Channel for power supply and correction circuits
Model Number: SMD2N65 Drain to Source Voltage: 650V
Current - Continuous Drain(Id): 2A Operating Temperature -: -55℃~+150℃
RDS(on): 4.5Ω@10V,1A Gate Threshold Voltage (Vgs(th)): 2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Jilin Sino Microelectronics JCS10N65ST S AR N channel FET for high frequency switching and UPS systems Manufactures
Jilin Sino Microelectronics JCS10N65ST S AR N channel FET for high frequency switching and UPS systems
Model Number: JCS10N65ST-S-AR Drain to Source Voltage: 650V
Current - Continuous Drain(Id): 9.5A Operating Temperature -: -55℃~+150℃
RDS(on): 950mΩ@10V Gate Threshold Voltage (Vgs(th)): 4.5V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Frequency Switching Jilin Sino-Microelectronics JCS6N70BC-262 N Channel MOSFET for Power Supplies Manufactures
High Frequency Switching Jilin Sino-Microelectronics JCS6N70BC-262 N Channel MOSFET for Power Supplies
Model Number: JCS6N70BC-262 Drain to Source Voltage: 700V
Current - Continuous Drain(Id): 6A Operating Temperature -: -55℃~+150℃
RDS(on): 1.6Ω@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET Transistor ISC IPP076N15N5 Suitable for High Frequency Switching and Rectification Manufactures
N Channel MOSFET Transistor ISC IPP076N15N5 Suitable for High Frequency Switching and Rectification
Model Number: IPP076N15N5 Drain to Source Voltage: 150V
Current - Continuous Drain(Id): 112A RDS(on): 7.6mΩ@10V
Operating Temperature -: -55℃~+175℃ Gate Threshold Voltage (Vgs(th)): 4.6V@160uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High frequency switching MOSFET Jilin Sino Microelectronics JCS730C N channel enhancement mode device Manufactures
High frequency switching MOSFET Jilin Sino Microelectronics JCS730C N channel enhancement mode device
Model Number: JCS730C Drain to Source Voltage: 400V
Current - Continuous Drain(Id): 5.5A Operating Temperature -: -55℃~+150℃
RDS(on): 1Ω@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Jilin Sino Microelectronics JCS7HN65VC IPAK transistor for high frequency switching and power supply Manufactures
Jilin Sino Microelectronics JCS7HN65VC IPAK transistor for high frequency switching and power supply
Model Number: JCS7HN65VC-IPAK Configuration: -
Drain to Source Voltage: 650V Current - Continuous Drain(Id): 7A
Operating Temperature -: - RDS(on): 1.35Ω@10V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High speed switching MOSFET Jilin Sino Microelectronics JCS5N60FC 220MF with low gate charge and Rds Manufactures
High speed switching MOSFET Jilin Sino Microelectronics JCS5N60FC 220MF with low gate charge and Rds
Model Number: JCS5N60FC-220MF Drain to Source Voltage: 600V
Current - Continuous Drain(Id): 4A Operating Temperature -: -55℃~+150℃
RDS(on): 2.5Ω@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High frequency switching transistor Jilin Sino Microelectronics JCS540CT 220C with low gate charge Manufactures
High frequency switching transistor Jilin Sino Microelectronics JCS540CT 220C with low gate charge
Model Number: JCS540CT-220C Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 33A Operating Temperature -: -55℃~+150℃
RDS(on): 44mΩ@10V Gate Threshold Voltage (Vgs(th)): 4V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High speed switching diode amsem BAV70W with low leakage current and epoxy meeting UL 94 V0 standard Manufactures
High speed switching diode amsem BAV70W with low leakage current and epoxy meeting UL 94 V0 standard
Model Number: BAV70W Reverse Leakage Current (Ir): 2.5uA@75V
Non-Repetitive Peak Forward Surge Current: 2A Reverse Recovery Time (trr): 4ns
Diode Configuration: 1 Pair Common Cathode Voltage - DC Reverse (Vr) (Max): 75V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Schottky Barrier Diode KEC KDR720E-RTK/P with Low Forward Voltage and High Speed Switching Capability Manufactures
Schottky Barrier Diode KEC KDR720E-RTK/P with Low Forward Voltage and High Speed Switching Capability
Model Number: KDR720E-RTK/P Reverse Leakage Current (Ir): 30uA@10V
Non-Repetitive Peak Forward Surge Current: 1A Voltage - DC Reverse (Vr) (Max): 30V
Voltage - Forward(Vf@If): 500mV@200mA Current - Rectified: 200mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High speed switching diode KEC KDS184 RTK P with fast reverse recovery time and compact SOT 23 package Manufactures
High speed switching diode KEC KDS184 RTK P with fast reverse recovery time and compact SOT 23 package
Model Number: KDS184-RTK/P Non-Repetitive Peak Forward Surge Current: 2A
Reverse Leakage Current (Ir): 500nA@80V Reverse Recovery Time (trr): 1.6ns
Operating Junction Temperature Range: - Voltage - DC Reverse (Vr) (Max): 80V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Speed Switching Transistor BLUE ROCKET KTA1666-Y PNP Silicon Type with SOT-89 Plastic Package Manufactures
High Speed Switching Transistor BLUE ROCKET KTA1666-Y PNP Silicon Type with SOT-89 Plastic Package
Model Number: KTA1666-Y Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 1W
Transition frequency(fT): 120MHz type: PNP
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
NPN Transistor CBI 2SC2873U High Speed Switching and Power Amplification with Low Saturation Voltage Manufactures
NPN Transistor CBI 2SC2873U High Speed Switching and Power Amplification with Low Saturation Voltage
Model Number: 2SC2873U Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 500mW
Transition frequency(fT): 120MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low saturation voltage transistor Guangdong Hottech 2SC2873 with high speed switching and compact flat package design Manufactures
Low saturation voltage transistor Guangdong Hottech 2SC2873 with high speed switching and compact flat package design
Model Number: 2SC2873 Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA Pd - Power Dissipation: 500mW
Transition frequency(fT): 120MHz type: NPN
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Ultra High Speed Switching Diode CBI MMBD914 Silicon Planar Diode in Compact SOT23 Plastic Package Manufactures
Ultra High Speed Switching Diode CBI MMBD914 Silicon Planar Diode in Compact SOT23 Plastic Package
Model Number: MMBD914 Non-Repetitive Peak Forward Surge Current: 4A
Reverse Recovery Time (trr): 4ns Voltage - DC Reverse (Vr) (Max): 100V
Pd - Power Dissipation: 350mW Voltage - Forward(Vf@If): 1V@10mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Silicon Epitaxial Planar Diode CBI BAS20W High Voltage Switching Diodes for General Purpose Circuits Manufactures
Silicon Epitaxial Planar Diode CBI BAS20W High Voltage Switching Diodes for General Purpose Circuits
Model Number: BAS20W Description: SOT-323 Single Diodes RoHS
Mfr. Part #: BAS20W Package: SOT-323
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Compact SOT23 packaged diode CBI BAV23SE designed for high voltage switching electronic applications Manufactures
Compact SOT23 packaged diode CBI BAV23SE designed for high voltage switching electronic applications
Model Number: BAV23SE Non-Repetitive Peak Forward Surge Current: 9A
Reverse Leakage Current (Ir): 100nA@200V Reverse Recovery Time (trr): 50ns
Operating Junction Temperature Range: -65℃~+150℃@(Tj) Voltage - DC Reverse (Vr) (Max): 250V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High speed switching diode JSCJ UMN1N multiple matched diodes in small green molding compound package Manufactures
High speed switching diode JSCJ UMN1N multiple matched diodes in small green molding compound package
Model Number: UMN1N Non-Repetitive Peak Forward Surge Current: 250mA
Reverse Leakage Current (Ir): 100nA@70V Reverse Recovery Time (trr): 4ns
Operating Junction Temperature Range: -55℃~+150℃@(Tj) Voltage - DC Reverse (Vr) (Max): 80V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Schottky barrier diode JSCJ BAT54WS L9 with high speed switching and low forward voltage characteristics Manufactures
Schottky barrier diode JSCJ BAT54WS L9 with high speed switching and low forward voltage characteristics
Model Number: BAT54WS L9 Non-Repetitive Peak Forward Surge Current: 600mA
Reverse Leakage Current (Ir): 2uA@25V Diode Configuration: Independent
Voltage - DC Reverse (Vr) (Max): 30V Voltage - Forward(Vf@If): 1V@100mA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
2 in 1 Package IGBT Module Fuji Electric 2MBI400VB-060-50 for High Speed Switching Applications Manufactures
2 in 1 Package IGBT Module Fuji Electric 2MBI400VB-060-50 for High Speed Switching Applications
Model Number: 2MBI400VB-060-50 Pd - Power Dissipation: 1.97kW
Td(off): 100ns Td(on): 650ns
Collector-Emitter Breakdown Voltage (Vces): 600V Input Capacitance(Cies): 25.6nF
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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