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Buck Converter Design

buck converter design

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switching P channel mosfet HUASHUO HSCE1218 with low gate charge and high cell density trench design Manufactures
switching P channel mosfet HUASHUO HSCE1218 with low gate charge and high cell density trench design
Model Number: HSCE1218 Configuration: -
Drain to Source Voltage: 12V Current - Continuous Drain(Id): 60A
RDS(on): 5.6mΩ@2.5V Operating Temperature -: -55℃~+150℃
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
dual N channel MOSFET HUASHUO HSM3206 featuring fast switching and RoHS compliance for power electronics design Manufactures
dual N channel MOSFET HUASHUO HSM3206 featuring fast switching and RoHS compliance for power electronics design
Model Number: HSM3206 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 13A Operating Temperature -: -55℃~+150℃
RDS(on): 6mΩ@4.5V,10A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density Trenched N Channel MOSFET HUASHUO HSU3018B Designed for Fast Switching Applications Manufactures
High Cell Density Trenched N Channel MOSFET HUASHUO HSU3018B Designed for Fast Switching Applications
Model Number: HSU3018B Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 110A Operating Temperature -: -55℃~+150℃
RDS(on): 2.4mΩ@10V,30A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trench technology P channel MOSFET HUASHUO HSBB2627 designed for power conversion Manufactures
High cell density trench technology P channel MOSFET HUASHUO HSBB2627 designed for power conversion
Model Number: HSBB2627 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 48A Operating Temperature -: -55℃~+150℃
RDS(on): 9mΩ@4.5V,10A Gate Threshold Voltage (Vgs(th)): -
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Fast switching N channel MOSFET HUASHUO HSM20N02 designed for battery protection and power management Manufactures
Fast switching N channel MOSFET HUASHUO HSM20N02 designed for battery protection and power management
Model Number: HSM20N02 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 20A Operating Temperature -: -55℃~+150℃
RDS(on): 5.5mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.2V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
fast switching P channel MOSFET HUASHUO HSU6115 with low RDS ON and high cell density trench design Manufactures
fast switching P channel MOSFET HUASHUO HSU6115 with low RDS ON and high cell density trench design
Model Number: HSU6115 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 35A Operating Temperature -: -55℃~+150℃
RDS(on): 25mΩ@10V Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Power Switching N Channel MOSFET HSP6048 Featuring Trench Design and High Cell Density for Operation Manufactures
Power Switching N Channel MOSFET HSP6048 Featuring Trench Design and High Cell Density for Operation
Model Number: HSP6048 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 150A Operating Temperature -: -55℃~+150℃
RDS(on): 3.6mΩ@10V,20A Gate Threshold Voltage (Vgs(th)): 2.3V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N channel MOSFET HUASHUO HSBA6016 featuring 100 percent EAS guaranteed reliability and trench design Manufactures
N channel MOSFET HUASHUO HSBA6016 featuring 100 percent EAS guaranteed reliability and trench design
Model Number: HSBA6016 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 52A Operating Temperature -: -55℃~+150℃
RDS(on): 12mΩ@10V,30A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density P channel MOSFET HUASHUO HSU60P02 designed for fast switching and power conversion Manufactures
High cell density P channel MOSFET HUASHUO HSU60P02 designed for fast switching and power conversion
Model Number: HSU60P02 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 60A Operating Temperature -: -55℃~+150℃
RDS(on): 8.5mΩ@4.5V,15A Gate Threshold Voltage (Vgs(th)): 650mV
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
40V P channel MOSFET HUASHUO HSM4103 with advanced trench technology and super low gate charge design Manufactures
40V P channel MOSFET HUASHUO HSM4103 with advanced trench technology and super low gate charge design
Model Number: HSM4103 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 8.6A Operating Temperature -: -55℃~+150℃
RDS(on): 32mΩ@10V,5A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density Trench N Channel MOSFET HUASHUO HSD6016 Designed for Industrial Switching Solutions Manufactures
High Cell Density Trench N Channel MOSFET HUASHUO HSD6016 Designed for Industrial Switching Solutions
Model Number: HSD6016 Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 47A Operating Temperature -: -55℃~+150℃
RDS(on): 12mΩ@10V,47A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
fast switching N channel MOSFET HUASHUO HSU90N02 with super low gate charge and high cell density design Manufactures
fast switching N channel MOSFET HUASHUO HSU90N02 with super low gate charge and high cell density design
Model Number: HSU90N02 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 90A Operating Temperature -: -55℃~+175℃
RDS(on): 2.7mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 1.1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Switching P Channel MOSFET HUASHUO HSU4115 with Low Gate Charge and High Cell Density Trench Design Manufactures
Switching P Channel MOSFET HUASHUO HSU4115 with Low Gate Charge and High Cell Density Trench Design
Model Number: HSU4115 Drain to Source Voltage: 40V
Current - Continuous Drain(Id): 52A Operating Temperature -: -55℃~+150℃
RDS(on): 13mΩ@10V,18A Gate Threshold Voltage (Vgs(th)): -
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Low gate charge P channel MOSFET HUASHUO HSCB2307 designed for fast switching and power conversion Manufactures
Low gate charge P channel MOSFET HUASHUO HSCB2307 designed for fast switching and power conversion
Model Number: HSCB2307 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 8A Operating Temperature -: -55℃~+150℃
RDS(on): 18mΩ@4.5V,8A Gate Threshold Voltage (Vgs(th)): 1.2V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High Cell Density N Channel MOSFET HUASHUO HSU30N02 Designed for Power Management and Fast Switching Manufactures
High Cell Density N Channel MOSFET HUASHUO HSU30N02 Designed for Power Management and Fast Switching
Model Number: HSU30N02 Drain to Source Voltage: 20V
Current - Continuous Drain(Id): 30A Operating Temperature -: -55℃~+150℃@(Tj)
RDS(on): 8mΩ@4.5V,30A Gate Threshold Voltage (Vgs(th)): 1V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
HUASHUO HSU3103 30V P channel MOSFET offering low RDS ON and high reliability for advanced power supply designs Manufactures
HUASHUO HSU3103 30V P channel MOSFET offering low RDS ON and high reliability for advanced power supply designs
Model Number: HSU3103 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 35A Operating Temperature -: -55℃~+150℃
RDS(on): - Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density trenched MOSFET HUASHUO HSP6032A designed for fast switching and power conversion Manufactures
High cell density trenched MOSFET HUASHUO HSP6032A designed for fast switching and power conversion
Model Number: HSP6032A Drain to Source Voltage: 60V
Current - Continuous Drain(Id): 75A Operating Temperature -: -55℃~+150℃
RDS(on): 8.5mΩ@10V,20A Gate Threshold Voltage (Vgs(th)): 4.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
Trench technology based 80V P channel MOSFET HUASHUO HSH8129 designed for fast switching and power conversion Manufactures
Trench technology based 80V P channel MOSFET HUASHUO HSH8129 designed for fast switching and power conversion
Model Number: HSH8129 Configuration: -
Drain to Source Voltage: 80V Current - Continuous Drain(Id): 120A
Operating Temperature -: -55℃~+150℃ RDS(on): 9mΩ@4.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
N Channel MOSFET HUAYI HYG080N10LS1C2 with PDFN5 by 6 package and halogen free RoHS compliant design Manufactures
N Channel MOSFET HUAYI HYG080N10LS1C2 with PDFN5 by 6 package and halogen free RoHS compliant design
Model Number: HYG080N10LS1C2 Drain to Source Voltage: 100V
Current - Continuous Drain(Id): 65A Operating Temperature -: -55℃~+175℃
RDS(on): 13mΩ@4.5V Gate Threshold Voltage (Vgs(th)): 3V@250uA
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
High cell density complementary MOSFETs HUASHUO HSU3903 designed for power switching and reliability Manufactures
High cell density complementary MOSFETs HUASHUO HSU3903 designed for power switching and reliability
Model Number: HSU3903 Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 30A;24A Operating Temperature -: -55℃~+150℃
RDS(on): 55mΩ@4.5V,6A Gate Threshold Voltage (Vgs(th)): 2.5V
Hefei Purple Horn E-Commerce Co., Ltd. [Anhui,China]
Verified Supplier
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