BSP296NH6327XTSA1 N-Channel Logic Level MOSFET 60V 2.5A SOT-23 Package Ultra-Low 85mΩ Rds(on) 4V Vgs(th) Fast Switching 100% Rg Tested RoHS Compliant AEC-Q101 Qualified
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BSP296NH6327XTSA1 N-Channel Logic Level MOSFET 60V 2.5A SOT-23 Package Ultra-Low 85mΩ Rds(on) 4V Vgs(th) Fast Switching 100% Rg Tested RoHS Compliant AEC-Q101 Qualified Features • N-channel • Enhancement mode • Logic level (4.5V rated) • Avalanche......
TOP Electronic Industry Co., Ltd.
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NTD6416ANLT4G Mosfet Tube High Speed Low On Resistance SOT-23 package
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... resistance for high efficiency power management applications. Features: • 60V, N-Channel • Ultra-small, lead-free, Halogen-free SOT-23 package • Low gate charge • Low ON-state resistance • Improved gate,...
Shenzhen Sai Collie Technology Co., Ltd.
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IC Integrated Circuits TXU0101DBVR SOT-23-6 Logic ICs
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... Mounting Style: SMD/SMT Package / Case: SOT-23-6 Supply Voltage - Min: 3.3 V Supply Voltage - Max: 5 V Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C Packaging: Reel Packaging: Cut Tape Brand: Texas Instruments Data Rate:...
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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NTR1P02LT1G Power MOSFET -20 V, -1.3 A, P-Channel SOT-23 Package high voltage power mosfet
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Power MOSFET −20 V, −1.3 A, P−Channel SOT−23 Package These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power ......
ChongMing Group (HK) Int'l Co., Ltd
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BSS138K Electronic IC Chips 220mA 50V 3 Pin SOT-23 Package
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...MOSFET BSS138K, 220 mA, Vds=50 V, 3-Pin SOT-23 Package Enhancement mode field effect transistors (FETs) are produced using Fairchild's patented high cell density DMOS technology. This high-density process is designed to minimize on-state resistance, providing robust and reliable performance and fast switching. Fairchild offers a large portfolio of MOSFET...
Shenzhen Res Electronics Limited
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SQ2361AEES 60V SOT-23 Automotive P Channel MOSFET 1.7A
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...MOSFET SOT-23 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ohm) at VGS = - 10 V 0.335 RDS(on) (Ohm) at VGS = - 4.5 V 0.500 ID (A) - 1.7 Configuration Single ORDERING INFORMATION Package SOT-23......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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High Power MOSFET FQT13N06L N-Channel, Logic Level, QFET® 60V 2.8A 110mΩ, SOT-223
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High Power MOSFET FQT13N06L N-Channel, Logic Level, QFET® 60V 2.8A 110mΩ, SOT-223 [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize......
Sunbeam Electronics (Hong Kong) Limited
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8205A Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
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...SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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RoHS Dual N Channel Mosfet Power Transistor SOT-23-6L MOSFETS 6.0 A VDSS
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...SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and Current Handing Capability z Surface Mount Package......
Beijing Silk Road Enterprise Management Services Co.,LTD
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BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23
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... and cordless telephones. Features • Pb−Free Packages are Available • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space NOTES: 1. DIMENSIONING AND...
Anterwell Technology Ltd.
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