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Single P Channel High Power Mosfet

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single p channel high power mosfet

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High Power MOSFET NVJS4151P Single P−Channel Trench Power MOSFET -20V -4.1A 67mΩ

High Power MOSFET NVJS4151P Single P−Channel Trench Power MOSFET -20V -4.1A 67mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......

Sunbeam Electronics (Hong Kong) Limited

Address: Internatinal Logistics Center A-702, No. 1 South China Road, ShenZhen, China

3A 500V 2.85Ω N-Channel High Power MOSFET For Hairdryer And Adaptor

...FEATURES • Fast Switching • Low ON Resistance • Low Gate Charge • 100% Single Pulse avalanche energy Test APPLICATIONS • Power switch circuit of adaptor and charger. Q1.Who are we? A:We are based in Guangdong, China,factory start from 2012,is a...

Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

FDN360P MOSFET Power Electronics SOT-23-3 Package Single P-Channel High Power Version of Industry Standard

FDN360P MOSFET Power Electronics SOT-23-3 Package Single P-Channel High Power Version of Industry Standard FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 2A (Ta) Drive Voltage (......

Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

N Channel High Power MOSFET Device Durable For Solar Inverter

...h as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply and Charging Pile. This MOSFET is capable of handling high current and delivering maximum performance with its low on-resistance. It is also known as...

Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

F16N65L TO-220F-3L N-CHANNEL High Power MOSFET 16A 650V Applications In Switching Power Supplies And Adaptors

... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in...

Shenzhen Hunt Electronics Co., Ltd

Address: 24/25F, Building 13, Xingfucheng, Qingquan Road, Longhua District, Shenzhen, China

SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET

SI2301CDS - T1 - E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID......

Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ......

Guangdong Huixin Electronics Technology Co., Ltd.

Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China

1200v 50a High Power Mosfet Transistors / Thyristor CLA50E1200HB

...HIGH POWER MOSFET TRANSISTORS / THYRISTOR FOR LINE FREQUENCY 1200V 50A Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Circuit Control Mounting Type: Through Hole Package: TO247 High Light: n channel mosfet transistor , n channel transistor CLA50E1200HB High......

Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no...

Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

SI2301CDS-T1-E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET

ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

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