AOD407 Low Voltage P Channel Mosfet Voltage 60V 50W Surface Mount
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AOD407 MOSFET Power Electronics Transistors 60V 50W Surface Mount P-Channel Package TO-252 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min......
Shenzhen Sai Collie Technology Co., Ltd.
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NTMFS4C024NT1G Integrated Circuit Chip 2.8mOhm Low Power N Channel Mosfet
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...Channel Transistors 30V 5-DFN package Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Product Attributes Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
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...Channel Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Low Voltage Mosfet Portable Devices Use SOT-23 P Channel BC2301
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SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ......
Guangdong Huixin Electronics Technology Co., Ltd.
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IPD80R1K4P7 N Channel Mosfet Transistor TO-252
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...resistance and high switching speed, making it very suitable for use in low voltage applications. Conclusion: IPD80R1K4P7 has the following characteristics: Very low switching and conduction losses; High voltage limit, capable of operating at high voltage;...
HK LIANYIXIN INDUSTRIAL CO., LIMITED
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150V 20A 100W N Channel Mosfet , Integrated Circuit IC Surface Mount TO-252 AOD4454 D4454
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... low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current -...
Shenzhen Koben Electronics Co., Ltd.
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500V 5A N-Channel MOSFET advanced high voltage MOSFET process AOD5N50
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...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. ......
ChongMing Group (HK) Int'l Co., Ltd
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STB80PF55T4 Transistor IC Chip P Channel MOSFET High Power and Efficiency
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...Channel MOSFET for Power Applications The STMicroelectronics STB80PF55T4 is a high-performance P-Channel MOSFET designed for power applications that require efficient switching and high current handling capabilities. With a breakdown voltage of 55V and a continuous drain current rating of 80A, this MOSFET delivers robust performance in demanding environments. The STB80PF55T4 features a low......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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IRFB260NPBF N-Channel MOSFET 200V 46A Ultra-Low 19mΩ Rds(on) TO-220 Package Logic Level Fast Switching High Robustness Avalanche Rated for Motor and Power Conversion
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... 1:High Voltage Capability: A drain-source voltage (Vds) of 200V, making it suitable for high-voltage applications such as switch-mode power supplies (after AC rectification, e.g., 85-265VAC), motor drives, and control systems. 2:High Current Handling: A...
TOP Electronic Industry Co., Ltd.
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N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power Supplies
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...channel mosfet field effect transistors for switched mode power supplies Datasheet:CY-10N60F.pdf Field effect transistor features: Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC) Fast switching 100% avalanche tested to make sure quality before ship This 10N60 improved rate of change of voltage over time Mosfet General Description: The10N60H N Channel...
Shenzhen Canyi Technology Co., Ltd.
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