IRFR220NTRPBF Mosfet In Power Electronics High Performance Reliable Switching
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...Mosfet In Power Electronics High Performance Reliable Switching IRFR220NTRPBF MOSFET N-Channel Power MOSFET Product Parameters: • Drain-Source Voltage (Vdss): 100V • Continuous Drain Current (Id): 20A • On-Resistance Rds(on): 0.07Ω • Gate-Source Voltage (Vgs): ±20V • Power......
Shenzhen Sai Collie Technology Co., Ltd.
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Clean High Power IGBT Fast Switching Speed For Automotive Electronics
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...Power IGBT With Fast Switching Speed For Automotive Electronics Product Description: Our High Power IGBT product is a combination of the best qualities of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and bipolar junction transistors (BJTs), resulting in a device that is highly efficient and reliable. The product also features faster switching speed, allowing for more efficient power......
Guangdong Lingxun Microelectronics Co., Ltd
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ZXMP10A17E6TA 100V P-CHANNEL ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet
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ZXMP10A17E6TA 100V P-CHANNEL ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions......
ChongMing Group (HK) Int'l Co., Ltd
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Surface Mount High Frequency Switching Mosfet Multiscene Military Standard
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Product Description: High Power MOSFET High Power MOSFET is a type of N-type metal-oxide-semiconductor field-effect transistor (MOSFET) that offers low on-resistance, high frequency operation, high voltage capability and high power dissipation. It is based......
Reasunos Semiconductor Technology Co., Ltd.
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KUG75H12W4L1 IGBT Module Insulated Gate Bipolar Transistor Module For Power Electronics
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...speed switching capability of a power transistor with the efficiency of a MOSFET. This module features an Insulated Gate Bipolar Transistor (IGBT) element, which allows for efficient power control and management in a wide range of applications. Designed to...
Krunter Future Tech (Dongguan) Co., Ltd.
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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
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IRF7311 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ......
Anterwell Technology Ltd.
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JUYI N Channel High Voltage BLDC Motor Driver MOSFET 210W Power Switching Application
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...Power MOSFET GENERAL DESCRIPTION The JY11M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching......
Shanghai Juyi Electronic Technology Development Co., Ltd
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Trans MOSFET 60V 70A Electronic Integrated Circuits IRFP064PBF
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IRFP064PBF Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-247AC Descriptions : Third generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The......
Shenzhen Weitaixu Capacitor Co.,Ltd
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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor
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10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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MP4569GN-Z Switching Regulator Monolithic Power Systems
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MP4569GN-Z Switching Regulator 75V 0.3A Sync Step Down Converter DESCRIPTION The MP4569 is a step-down switching regulator with integrated high-side/low-side, high-voltage power MOSFETs. It provides a highly efficient output of up to 0.3A. The wide 4.5V......
Shenzhen Hongxinwei Technology Co., Ltd
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