4N-Channel Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W
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...Mosfet Array MSCSM170HM23CT3AG Full Bridge SiC MOSFET Power Module 602W Product Description Of MSCSM170HM23CT3AG MSCSM170HM23CT3AG is Full Bridge SiC MOSFET Power Module, 1700 V, 124 A silicon carbide (SiC) Mosfet Array module. Specification Of MSCSM170HM23CT3AG Part Number MSCSM170HM23CT3AG Technology Silicon Carbide (SiC......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Ultra Low Resistance SiC Mosfet High Efficiencys For Renewable Energy Systems
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Ultra Low Resistance SiC Mosfet High Efficiencys For Renewable Energy Systems *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ......
Guangdong Lingxun Microelectronics Co., Ltd
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750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
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... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ......
SHAREWAY TECHNOLOGY CO., LTD.
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Heatproof High Voltage SiC Mosfet , Multipurpose N Channel Fet Transistor
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Product Description: High Voltage MOS-Gate Transistor, commonly known as High Voltage FET, is a type of semiconductor device designed for use in high voltage applications. This device has been gaining popularity due to its strong performance and wide range......
Reasunos Semiconductor Technology Co., Ltd.
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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET
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Description Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small ......
Zhuhai Cersol Technology Co, Ltd
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SiC Seed Wafer 4H N Type Dia 153 155 2inch-12inch Customized For Manufacturing MOSFETs
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...SiC seed wafers SiC seed wafer 4H N type Dia 153 155 2inch-12inch customized Used for manufacturing MOSFETs Silicon Carbide (SiC) seed crystal wafers serve as fundamental materials in the semiconductor industry. Manufactured from high-purity silicon carbide (SiC) raw materials through Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD) processes, our company specializes in supplying 2-12 inch SiC......
SHANGHAI FAMOUS TRADE CO.,LTD
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6H-N Semi-insulating SiC Substarte / Wafer For MOSFETs、JFETs BJTs High Resistivity Wide Bandgap
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6H-N Semi-insulating SiC substarte/wafer for MOSFETs,JFETs BJTs,high resistivity wide bandgap Semi-insulating SiC substarte/wafer's abstract Semi-insulating silicon carbide (SiC) substrates/wafers have emerged as crucial materials in the realm of advanced ......
SHANGHAI FAMOUS TRADE CO.,LTD
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Black Silicon Carbide As Refractory In Ceramic Production Sic
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...Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC......
Zhenan Metallurgy Co., Ltd
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Single Digit LED Seven Segment Display 0.4 Inch Multipurpose
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Single digit, 0.4 inch digit, 7-segment diplay, common anode or common cathode. Single digits 7 segment led display selection guide Part No. Chip Electro-optical Data (At 10mA) Common Anode Common Cathode Material/Emitted Color Wave Length λd(nm) VF (V) Iv......
Interled Optoelectronics Technology Ltd.
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MC33GD3100EK Gate Drivers EV Inverter Control; IGBT & SiC GDIC
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Gate Drivers EV Inverter Control; IGBT & SiC GDIC Product Attribute Attribute Value Select Attribute Manufacturer: NXP Product Category: Gate Drivers RoHS: Details Product: IGBT, MOSFET Gate Drivers Type: Half-Bridge Mounting Style: SMD/SMT Package / Case......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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