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low rds on silicon mosfet

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Low Rds On Silicon Low Threshold Voltage Mosfet Durable

China Low Rds On Silicon Low Threshold Voltage Mosfet Durable on sale
...263, TO-220AB, and TO-220F, which give you flexibility in choosing the best fit for your needs. In terms of lead-free status, this MOSFET is RoHS compliant, so you can be sure that it meets the highest environmental standards. One of the key benefits of...
Guangdong Lingxun Microelectronics Co., Ltd

Address: No.7,XingRong Road,ShiJie Town,Dongguan City,Guangdong Province,China

NTLJS2103PTBG MOSFET Power Electronics 6-WDFN High Current High Voltage Low RDS(on) Switching Devices

China NTLJS2103PTBG MOSFET Power Electronics 6-WDFN High Current High Voltage Low RDS(on) Switching Devices on sale
... Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 40mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 800mV @ 250µA Gate Charge (Qg) (......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

Practical Low Voltage MOSFET Multifunctional N Channel Low Rds

China Practical Low Voltage MOSFET Multifunctional N Channel Low Rds on sale
High EAS Capability Low Voltage MOSFET Trench/SGT Structure Process Low Rds(ON) *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: ......
Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications

China IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications on sale
...MOSFET 100V Ultra-Low Rds(on) 1.9mandOmega; TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications andnbsp; Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low......
TOP Electronic Industry Co., Ltd.

Address: RM1441,GUO LI Bldg,ZhongHang RD.,Futian Dist.Shen Zhen,China

Automotive IGBT Modules FTCO3V455A2 40V 150A Low Rds Automotive MOSFET Module

China Automotive IGBT Modules FTCO3V455A2 40V 150A Low Rds Automotive MOSFET Module on sale
... Guaranteed + 100% Low Price Guaranteed + Export to 108 countries, customer satisfaction rate: 99.9% !! [Company profile] Shenzhen Mingjiada Electronics Co., Ltd. is an authorized ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

Low R DS(ON) Mosfet Power Transistor Battery Protection Switch Use

China Low R DS(ON) Mosfet Power Transistor Battery Protection Switch Use on sale
...MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Battery protection switch Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3

China Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V  TO247-3 on sale
... of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™...
Shenzhen Hongxinwei Technology Co., Ltd

Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China

FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

China FDN304PZ  P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet on sale
...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

FDMS6681Z P Channel Mosfet Driver Circuit , Power Switching Transistor PowerTrench

China FDMS6681Z P Channel Mosfet Driver Circuit , Power Switching Transistor PowerTrench on sale
... combination for low rDS(on) HBM ESD Protection Level of 8kV Typical(Note 3) MSL1 Robust Package Design RoHS Compliant General Description The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and...
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

China IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET on sale
...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

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