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Low On Resistance N Channel Mosfet

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low on resistance n channel mosfet

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High Power N-channel MOSFET with High Efficiency Low On Resistance and Military Standard Production

Product Description: The High Power MOSFET is a cutting-edge device type designed to meet the demanding requirements of modern electrical and electronic applications. As a high power n channel MOSFET, this product offers exceptional performance ......

Reasunos Semiconductor Technology Co., Ltd.

Address: 405,4F, B2 Bldg, Tian'an Cyber Park, No.1 Huangjin Road,Nancheng District, Dongguan City, Guangdong Province

Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......

Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

IRLML5203TRPBF Infineon / IRUltra Low On-Resistance Low Gate Charge P-Channel MOSFET MOSFET

...MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International Rectifier utilizeadvanced processing techniques to achieve the extremely lowon-resistance......

Shenzhen Hongxinwei Technology Co., Ltd

Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China

Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

IRLML9303TRPBF MOSFET Power Electronics Low On Resistance N-Channel Package TO-236

IRLML9303TRPBF MOSFET Power Electronics Low On Resistance N-Channel Package TO-236 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) Drive Voltage (Max Rds On, Min Rds......

Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

Thermal Resistance N Channel Mosfet Switch , Medium Power Transistor

AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device......

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

Address: Room 2013,DingCheng International Building, ZhenHua Road, FuTian District, ShenZhen, GuangDong Province

N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching

... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and...

Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

JUYI N Channel Enhancement Mode Power MOSFET 70V/90A Low On Resistance Fast Switching

... the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide ......

Shanghai Juyi Electronic Technology Development Co., Ltd

Address: No. 1, lane 1199, yunping road, jiading district, Shanghai,China

Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF

...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......

Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W

...Channel MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance......

Shenzhen Res Electronics Limited

Address: B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China

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