SI4703-C19-GMR RF Power Transistor - Compact High Efficiency And Reliable Performance
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                                            ...RF Power Transistor Product Description: The SI4703-C19-GMR is an advanced RF power transistor designed using a high-voltage BiCMOS process. This device is suitable for high-power, high-efficiency, and low-noise applications in the HF and VHF bands. It features a wide bandwidth, high output power, and low noise figure. The SI4703-C19-GMR is suitable for use in a variety of RF applications including RF amplifiers, RF power...                                         
                                            Shenzhen Sai Collie Technology Co., Ltd.
                                         
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RF Power Transistors FHC40LG Super Low Noise HEMT FUJITSU RF Power Transistors RF MODULE
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                                            FHC40LG is a Super Low Noise HEMT. Part NO: FHC40LG Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in ......                                         
                                            Mega Source Elec.Limited
                                         
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BFS505 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor
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                                            ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF......                                         
                                            DELI ELECTRONICS TECHNOLOGY CO.,LTD
                                         
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Custom Made Rf Power Amplifier Module , Ultra Low Noise Rf Amplifier 40 50 60dB Gain
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                                            2GHz , S-Band , Low Noise Amplifier LNA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio......                                         
                                            VBE Technology Shenzhen Co., Ltd.
                                         
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BFS505,115 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor
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                                            ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF......                                         
                                            ChongMing Group (HK) Int'l Co., Ltd
                                         
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1800~2200MHz 120W Low Noise RF Microwave Amplifier for EMC Test, Telecommunocation
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                                            ... signals. It is primarily used in wireless communication, radar systems, satellite communication, broadcast television, medical equipment, and other fields. The amplifier can amplify low-power RF signals to sufficient levels to ensure signal integrity and...                                         
                                            Nanjing Shinewave Technology Co., Ltd.
                                         
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30dB Small Signal Gain Low Noise RF Amplifier 1-18 GHz Gain 10dBm High Linearity
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                                            ...18GHz Low Noise Amplifier (30dB Gain, 10dBm Output Power) Key Features: Ultra-Wideband (1-18GHz): Supports multi-band RF applications High Gain (30dB): Ensures superior signal amplification Low Noise Design......                                         
                                            Sichuan ZR Hi-Tech Ltd.
                                         
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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                                            ... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  ...                                         
                                            Shenzhen Koben Electronics Co., Ltd.
                                         
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Low Loss IGBT Power Transistor IKW20N60T 600V 20A 166W Trenchstop IGBT3
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                                            ...Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features Lowest VCEsat drop for lower conduction losses Low......                                         
                                            Shenzhen Retechip Electronics Co., Ltd
                                         
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NPN Low Vcesat Mosfet Power Transistor PNP complement PBSS4160T
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                                            ...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low......                                         
                                            Shenzhen Huahao Gaosheng Technology Co., Ltd
                                         
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