High Durability Silicon Low Gate Threshold Voltage Mosfet TO-251
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                                            ...Low Gate Threshold Voltage Mosfet TO-251 Product Description: Our MOSFET is made of high-quality silicon material, ensuring its durability and reliability. It also has a lead-free status, meeting the RoHS standards for environmental protection. The MOSFET is available in three different packages: TO-251. This allows for flexibility in designing and implementing the component into various systems. With its low......                                         
                                        
                                            Guangdong Lingxun Microelectronics Co., Ltd
                                         
                                        
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SGT Stable Low Gate Threshold Voltage Mosfet For DC DC Converter
                                         
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                                            Low Threshold Voltage MOSFET with High EAS Capability for DC/DC Converter in Trench/SGT Structure Process *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } ......                                         
                                        
                                            Reasunos Semiconductor Technology Co., Ltd.
                                         
                                        
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IXTQ130N10T MOSFET High Power Low On Resistance and Low Gate Threshold Voltage for Optimal Performance
                                         
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                                            ...: TO-247 Product Description: The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for use in...                                         
                                        
                                            Shenzhen Sai Collie Technology Co., Ltd.
                                         
                                        
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MDP1932 BVDSS Gate Threshold Voltage MagnaChip Gate Leakage Current
                                         
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                                            Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V ID = 250μA, VGS = 0V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA Drain Cut-Off Current VGS(th) VDS = 72V, VGS = 0V Gate Leakage Current IGSS VGS = ±20V, VDS = 0V Drain-Source ON ......                                         
                                        
                                            HK NeoChip Technology Limited
                                         
                                        
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Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3
                                         
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                                            ... of CoolMOS™ with market entry in 2001. C3 is the "working horse" of the portfolio. Summary of Features: Low specific on-state resistance (RDS(on)*A) Very low energy storage in output capacitance (Eoss) @400V Low gate charge (Qg) Fieldproven CoolMOS™...                                         
                                        
                                            Shenzhen Hongxinwei Technology Co., Ltd
                                         
                                        
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Low Voltage Mosfet Portable Devices Use SOT-23 P Channel BC2301
                                         
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                                            ... Converter Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-Drain Diode Current IS...                                         
                                        
                                            Guangdong Huixin Electronics Technology Co., Ltd.
                                         
                                        
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
                                         
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                                            20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......                                         
                                        
                                            Shenzhen Hua Xuan Yang Electronics Co.,Ltd
                                         
                                        
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
                                         
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                                            20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS......                                         
                                        
                                            Beijing Silk Road Enterprise Management Services Co.,LTD
                                         
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SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives
                                         
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                                            ...MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low......                                         
                                        
                                            TOP Electronic Industry Co., Ltd.
                                         
                                        
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Through Hole Mosfet Power Transistor 1.1V Vgs Th - Gate Source Threshold Voltage
                                         
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                                            Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Features •OptimizedforhighperformanceSMPS,e.g.syncrec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249......                                         
                                        
                                            Shenzhen Weitaixu Capacitor Co.,Ltd
                                         
                                        
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