HMC199MS8ETR Cellular RF Power Transistors For High Gain And Efficiency
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HMC199MS8ETR RF Power Transistor For High Gain And Efficiency HMC199MS8ETR RF Power Transistors Product Description: The HMC199MS8ETR is a GaN-based RF power transistor that uses the latest Gallium Nitride (GaN) technology. It is designed for use in high ......
Shenzhen Sai Collie Technology Co., Ltd.
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IRFS4227TRLPBF NPN PNP Transistors 200V 62A 70nC Qg N Channel Mosfet
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...Transistors IRFS4227TRLPBF 200V 62A 26mOhm 70nC Qg N Channel Mosfet Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest......
Shenzhen Retechip Electronics Co., Ltd
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Transistor Socket 3 Pin LM79L12ACZ 3 Terminal Voltage Regulator
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...−5V, −12V, and −15V with output current capabilities in excess of 100mA. These devices were designed using the latest computer techniques for optimizing the packaged IC thermal/electrical performance. The LM79LXXAC series, even when combined with a...
Anterwell Technology Ltd.
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Original Mosfet Power Transistor For DC/DC Converters In Computing
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AOD508/AOI508 30V N-Channel AlphaMOS General Description • Latest Trench Power MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing • ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Integrated Circuit Chip IPBE65R230CFD7AATMA1 Surface Mount Transistors
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... fast body diode featuring ultra low Qr. Specification Of IPBE65R230CFD7AATMA1 Part Number IPBE65R230CFD7AATMA1 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 650 V Id - Continuous Drain Current: ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
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...transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest......
Angel Technology Electronics Co
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Graphite Composite Thermal Pad for Superior Thermal Conductivity Between Transistors and Heat Sinks
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... Transistors And Heat Sinks Company profile Ziitek company is a high-tech enterprise which dedicated to the R&D, manufacture and sales of the thermal interface materials (TIMs). We have rich experiences in this field which can support you the latest, most......
Dongguan Ziitek Electronical Material and Technology Ltd.
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STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET
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... ■ 100% avalanche tested Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged...
ChongMing Group (HK) Int'l Co., Ltd
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GE IC200UEO116 Micro Expansion Unit with 16 Sink-Type DC Transistor Outputs
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AMIKON holds a strong position in providing spare parts and components. We maintain a large inventory of control system parts and surplus items, including essential control system hardware. Additionally, we regularly release new hardware and products to ......
AMIKON LIMITED
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Stable High Voltage Power Mosfet , Heat Dissipation Transistor N Channel Mosfet
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Product Description: Introducing the High Voltage MOSFET, a high voltage FET designed to handle high voltages while still providing low leakage and great heat dissipation. This MOSFET provides the latest in technology for those looking for a reliable and ......
Reasunos Semiconductor Technology Co., Ltd.
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