P Channel Enhancement Mode Mosfet Power Transistor 60P03D TO-252 30V
|
...Enhancement Mode Mosfet Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited for high current load applications. Mosfet Power Transistor GENERAL FEATURES V DS =-30V,I D =-60A R DS(ON) <15mΩ @ V GS =-10V R DS(ON) <20mΩ @ V GS =-4.5V High......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
FDC637BNZ N-Channel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications
|
FDC637BNZ N-Channel Enhancement Mode MOSFET for High Efficiency Power Electronics Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 6.2A (Ta) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
|
ZXMP10A17E6TA 100V P-CHANNEL ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet
|
...ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs......
ChongMing Group (HK) Int'l Co., Ltd
|
FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A
|
...Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low On-Resistance • High Power......
Shenzhen Hongxinwei Technology Co., Ltd
|
High Power MOSFET NTMFD1D4N02P1E MOSFET, Power, 25V Dual N-Channel Power Clip
|
High Power MOSFET NTMFD1D4N02P1E MOSFET, Power, 25V Dual N-Channel Power Clip [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......
Sunbeam Electronics (Hong Kong) Limited
|
Industrial High Power N Channel MOSFET TO-252 High Efficiency And Performance
|
...High Power MOSFET High Efficiency And Performance Applications: This product is manufactured in China by LX, a trusted name in the electronics industry. It is ISO9001, ISO14001, ROHS, and REACH certified, ensuring that it meets the highest quality standards. The High Power MOSFET product has a gate-source voltage (Vgs) of ±30V, making it ideal for use in high-frequency power applications. Its N-type category and Mosfet......
Guangdong Lingxun Microelectronics Co., Ltd
|
Durable Industrial High Power N Channel Mosfet , Heat Dissipation Mosfet Metal Oxide
|
Reliable High Power N MOSFET with Stable Process and Advantages *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {display: ......
Reasunos Semiconductor Technology Co., Ltd.
|
High Power Switch Mode Stereo Power Amplifier Class TD With 2 X 1500W 8Ω
|
... sound industry, more and more people are seeking for amplifiers with light weight, high power output, and high efficiency. Switch mode power amplifiers are a good solution. Our S-700,900,1200,1500 are one series Class TD switch mode power amplifier with...
GuangZhou Master Sound Equipment Co., Limited
|
High Power Common Mode Inductance 20mH Vertical Flat Wire
|
High-Power common-mode inductance T1515 Vertical flat wire Product performance: The common mode inductor is essentially a two-way filter: on the one hand, it needs to filter out the common mode electromagnetic interference on the signal line, and on ......
Shenzhen Zhixiangyuan Electronics Co., Ltd.
|
CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet
|
CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
|
