IRF7726TRPBF MOSFET Power Electronics MOSFET N-Channel Power Switching Device
|
...Ω. 3. It provides low input and gate capacitance, making it suitable for high-frequency switching applications. 4. It offers low gate charge and fast switching times, making it suitable for high-speed switching applications. 5. It is RoHS compliant and is...
Shenzhen Sai Collie Technology Co., Ltd.
|
Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet
|
... • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for...
ChongMing Group (HK) Int'l Co., Ltd
|
4A700V TO-220F CS4N70A2 Fast Switching High Voltage MOSFET For Switch Mode Power Supply
|
...Fast Switching High Voltage MOSFET For Switch Mode Power Supply Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ CS4N70A2 TO-220F N 4 700 ±30 2 4 2550 2800 - - Product Description: One of the standout features of our MOSFET is its low on-resistance, which ensures high efficiency and low power......
Guangdong Lingxun Microelectronics Co., Ltd
|
Dynamic dV/dt Rating IRFP240PBF Power Mosfet Transistor Fast switching power mosfet
|
... • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for...
Anterwell Technology Ltd.
|
N Channel Mosfet Power Transistor IRF540NS 100V 33A 130W D2PAK MOSFET Fast Switching
|
... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and...
Shenzhen Koben Electronics Co., Ltd.
|
D7N65 TO-252W N-CHANNEL POWER MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors
|
...POWER MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • RDS(ON) ≤ 1.3 Ω @ VGS=10V, ID=3.5A • Fast switching...
Shenzhen Hunt Electronics Co., Ltd
|
Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized
|
Fast Switching Mosfet Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power MOSFETs......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
N And P Channel ±40V MOSFET With Fast Switching Speed For DC Motor Control
|
... RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance ● Fast Switching Speed APPLICATIONS ● Power Management ● DC/DC Converter ● DC Motor Control ●...
Shanghai Juyi Electronic Technology Development Co., Ltd
|
IRF9540NPBF P Channel Mosfet Transistor , 100V 23A Fast Switching Transistor
|
...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in...
Shenzhen ATFU Electronics Technology ltd
|
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
|
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V ......
Beijing Silk Road Enterprise Management Services Co.,LTD
|
