N-type Conductive SiC Substrate Composite Substrate 6inch For Epitaxy MBE CVD LPE
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...precision of ±0.2mm and utilizes the 4H polytype for superior electrical properties. The substrate exhibits a resistivity range of 0.015 to 0.025 ohm·cm, ensuring efficient conductivity. It includes a robust transfer layer thickness of at least 0.4μm,...
SHANGHAI FAMOUS TRADE CO.,LTD
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12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic
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12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H Type Conductive Solar Photovoltaic Product introduction 12 inch SiC substrate (12-inch SiC substrate) is a large silicon carbide (SiC) wafer, mainly used in ......
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide substrate......
Homray Material Technology
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6H Or 4H SiC Substrate, N Type Or Semi-Insulating -Powerway Wafer
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Product Description PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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