SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
|
SQ201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Manufacturer: POLYFET Product Category: MOSFETs RoHS: Details Technology:- Mounting Style: SMD/SMT Package / Case:- - Transistor Polarity:- - Number of Channels:- - Vds - Drain-Source Breakdown ......
Wisdtech Technology Co.,Limited
|
Enhancement Mode Mosfet Power Transistor / N Channel Mosfet Transistor
|
Enhancement Mode Mosfet Power Transistor / N Channel Mosfet Transistor Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of efficiency to be attained. There is a number of different varieties of power MOSFET available from different manufacturers, each with its own characteristics and abilities. Many power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
Electronic Components Rf Power Mosfet Transistors STPS15L30C-TR STS1DNC45 STV6419AG
|
Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate ......
Shenzhen Weitaixu Capacitor Co.,Ltd
|
MRF6VP3450HR5 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs FSL RF Power Transistors RF
|
MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview ......
Mega Source Elec.Limited
|
NDS356AP Power Transistor P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
...Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power...
Anterwell Technology Ltd.
|
MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral
|
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of 50 VDD Operation • ......
Shenzhen Koben Electronics Co., Ltd.
|
RF Power Transistor EPM7256AEQC208-10 - High Performance Low Power Consumption
|
...Listing: Product Name: EPM7256AEQC208-10 RF Power Transistor Product Features: - N-Channel Enhancement Mode - Self-Aligned Silicon Gate - High Performance - Low On-Resistance Technical Specifications: - Maximum Power Dissipation: 2.8W - Maximum Drain ......
Shenzhen Sai Collie Technology Co., Ltd.
|
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
|
...-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode......
Angel Technology Electronics Co
|
GaN IC IGLR60R340D1XUMA1 600V CoolGaN Enhancement Mode Power Transistor
|
...Enhancement Mode Power Transistor Product Description Of IGLR60R340D1XUMA1 IGLR60R340D1XUMA1 is 600V CoolGaN Enhancement Mode Power Transistor. Specification Of IGLR60R340D1XUMA1 Vgs(th) (Max) @ Id 1.6V @ 530µA Vgs (Max) -10V Input Capacitance (Ciss) (Max) @ Vds 87.7 pF @ 400 V Power......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
NDT452AP Power Mosfet Transistor P Channel Enhancement Mode Field Effect Transistor
|
NDT452AP P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density ......
ChongMing Group (HK) Int'l Co., Ltd
|
