Efficient TO-220AB Low Vgs Mosfet Improved System Efficiency
|
... but also durable, ensuring long-lasting performance. It is also RoHS compliant, making it an eco-friendly choice for your projects. One of the key advantages of our low voltage MOSFET is its ability to provide battery protection. By reducing power loss,...
Guangdong Lingxun Microelectronics Co., Ltd
|
Industrial Durable Low Vgs Mosfet , Small RSP Low Voltage Switching Transistor
|
Low Power Loss Trench Process MOSFET with High EAS Capability and Smaller RSP *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {......
Reasunos Semiconductor Technology Co., Ltd.
|
NTMFS5C460NLT1G MOSFET Power Electronics 8-PowerTDFN High Power Efficiency Low On Resistance Switch Mode Supplies
|
...MOSFET Power Electronics 8-PowerTDFN High Power Efficiency Low On Resistance Switch Mode Supplies FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 78A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 35A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V Vgs......
Shenzhen Sai Collie Technology Co., Ltd.
|
AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet
|
... trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ......
Anterwell Technology Ltd.
|
Low Voltage Mosfet Portable Devices Use SOT-23 P Channel BC2301
|
...=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-Drain Diode Current IS...
Guangdong Huixin Electronics Technology Co., Ltd.
|
AO4449 P-Channel Enhancement Mode Field Effect Transistor switching power mosfet low power mosfet
|
... trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ......
ChongMing Group (HK) Int'l Co., Ltd
|
NPN Low Vcesat Mosfet Power Transistor PNP complement PBSS4160T
|
...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low......
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T
|
PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • ......
Shenzhen Koben Electronics Co., Ltd.
|
MIC5016BWM Micrel Semiconductor -Low-Cost Dual High- or Low-Side MOSFET Driver
|
|
...designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5016/7 can sustain an on-state output indefinitely. The MIC5016/7 operates from a 2.75V to 30V supply. In highside configurations, the...
Mega Source Elec.Limited
|
MIC5020YM-TR IC Low Side Mosfet Driver / High Speed Gate Driver SOIC-8
|
...IC DRIVER MOSF LO SIDE HS 8-SOIC Gate Driver High Speed Low Side MOSFET Driver MIC5020YM Manufacturer: Microchip Product Type: Door Drivers Product: MOSFET Gate Drivers Type: Low-Side Installation style: SMD/SMT Package/Case: SOIC-8 Driver Quantity: 1 ......
Eastern Stor International Ltd.
|
