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6h P Sic Silicon Carbide Substrate

1-10 Results for

6h p sic silicon carbide substrate

from 9 Products

2inch 4inch 6inch Sic Silicon Carbide Substrate 6H High P-doped Type Off Axis 4.0°toward Prime Grade Dummy Grade

China 2inch 4inch 6inch Sic Silicon Carbide Substrate 6H High P-doped Type Off Axis 4.0°toward Prime Grade Dummy Grade on sale
... composed of silicon (Si) and carbon (C), which has unique physical and chemical properties. 6H-SiC is a polytype of silicon carbide with hexagonal structure and a band gap width of 3.02 eV, which exhibits specific electrical and thermal properties. 6H-P...
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

6inch SiC Wafer 4H/6H-P Silicon Carbide Substrate DSP (111) Semiconductor RF Microwave LED Lasers

China 6inch SiC Wafer 4H/6H-P Silicon Carbide Substrate DSP (111) Semiconductor RF Microwave LED Lasers on sale
...SiC Wafer 4H/6H-P Silicon Carbide Substrate DSP (111) Semiconductor RF Microwave LED Lasers Description of SiC Wafer: The 6-inch P-Type Silicon Carbide (SiC) Wafer in either 4H or 6H polytype. It has similar properties as the N-type Silicon Carbide (SiC) wafer, such as high-temperature resistance, high thermal conductivity, high electrical conductivity, etc. P-type SiC substrate......
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

On-Axis 6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size

China On-Axis 6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size on sale
...6H N Type SiC(Silicon Carbide) Wafer, Production Grade,Epi Ready,2”Size PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC......
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer

China 6h 2 Inch 4 Inch 6 Inch Polished High Temperature Silicon Carbide Sic Substrate Wafer on sale
... silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices,...
Shenzhen A.N.G Technology Co., Ltd

Address: Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109

4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier

China 4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier on sale
...SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer ,silicon carbide......
Homray Material Technology

Address: 苏州吴中区苏蠡路

1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space

China 1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space on sale
... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd

Address: No.755, Xianyuehuan Rd, Tianyuan District, Zhuzhou, Hunan Province

1700V 100A Silicon Carbide Schottky Diode MSCDC100A170D1PAG Automotive IGBT Modules

China 1700V 100A Silicon Carbide Schottky Diode MSCDC100A170D1PAG Automotive IGBT Modules on sale
... recovery and zero forward recovery, Aluminum nitride (AlN) substrate for improved thermal performance. Specification Of MSCDC100A170D1PAG Part Number: MSCDC100A170D1PAG Speed: No Recovery Time > 500mA (Io Voltage - Forward (Vf) (......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

99.9% Pure SIC Ceramic Tiles / Silicon Bulletproof Ceramic Plates Boron Carbide Plates

China 99.9% Pure SIC Ceramic Tiles / Silicon Bulletproof Ceramic Plates Boron Carbide Plates on sale
...SIC ceramic tiles / silicon carbide ceramic plates/ boron carbide plates used in Bulletproof Vest Silicon carbide powders are used to manufacture hard ceramics, refractories, abrasives, and composite reinforcements. Single-crystal products are as used as compounds in semiconductor substrates for high-temperature applications. Silicon carbide......
China Hunan High Broad New Material Co.Ltd

Address: No.70 Chezhan North Road,Changsha,Hunan,China

0.3mm Thick Metalized Ceramic Substrate Zirconia ZrO2 Diamond Polished

China 0.3mm Thick Metalized Ceramic Substrate Zirconia ZrO2 Diamond Polished on sale
... 0.3mm Thick Thin Film Zirconia ZrO2 Ceramic Substrate Specification of ceramic rods: 1. Raw material: Yttria stabilized zirconia, MgO stabilized zirconia, 95~99.5% alumina, Silicon carbide (SiC) 2. Forming method: Extruding, Dry pressed, Ceramic injection......
Jinghui Industry Limited

Address: 8th Building, Futing Industrial Park, Zhu village, Guanlan, Longhua, Shenzhen, China

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Products: 0.3mm Thick Metalized Ceramic Substrate Zirconia ZrO2 Diamond Polished

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