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4h n sic substrate wafer

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2inch Dia 50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal

China 2inch Dia 50.8mm 4H-Semi SiC Substrate Research Grade Single Crystal on sale
...-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers what is SiC subatrate A SiC substrate refers to a wafer made of silicon carbide (SiC), which is a wide-bandgap semiconductor material that has...
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized

China 6 Inch 4H Silicon Carbide SiC Substrates Wafers For Device Epitaxial Growth Customized on sale
...)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also...
SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device

China 4h-N Semi Silicon Carbide Wafer Sic Substrate Wafer for MOS Device on sale
... and carbon with chemical formula SiC. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.SiC is also one of the important LED components, it is a popular substrate for growing GaN devices, and it...
Shenzhen A.N.G Technology Co., Ltd

Address: Room421, Fuquan Bldg A, Qingquan Road, Longhua District, Shenzhen,China 518109

SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory

China SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory on sale
SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide substrate......
Homray Material Technology

Address: 苏州吴中区苏蠡路

4H Semi-Insulating SiC Substrate With Si Face Cmp Polished, Research Grade,4”Size

China 4H Semi-Insulating SiC Substrate With Si Face Cmp Polished, Research Grade,4”Size on sale
...industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China

LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001

China LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001 on sale
...Substrate Application The grinding wheels for LED substrate are mainly used for back thinning of 2”, 4” and 6”LED epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC......
China Abrasives Industry Hainan Corporation

Address: Room 701-702, Dihao Building, Pearl River Plaza, Haikou City, Hainan Province, China

350um ZnO Wafer CdS CdSe CdTe ZnS ZnSe Wafer And ZnTe Wafer

China 350um ZnO Wafer CdS CdSe CdTe ZnS ZnSe Wafer And ZnTe Wafer on sale
...Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and detector applications . With an ideal crystal structure , ZnO wafer ( Zinc oxide ) has a 2% lattice mismatch to GaN , that is much less than the lattice mismatch of sapphire wafer and SiC wafer . ZnO wafer is one of the most suitable substrate......
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD

Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China

1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space

China 1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space on sale
... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd

Address: No.755, Xianyuehuan Rd, Tianyuan District, Zhuzhou, Hunan Province

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