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3 3v F Ram With 40 Year Retention

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3 3v f ram with 40 year retention

from 3 Products

FM24CL64B-GTR 64Kb Serial F-RAM with Unlimited Endurance 150ns No-Write-Delay 1MHz I2C Interface 10^14 Read/Write Cycles Low-Power Operation 3.3V Supply and 40-Year Data Retention

China FM24CL64B-GTR 64Kb Serial F-RAM with Unlimited Endurance 150ns No-Write-Delay 1MHz I2C Interface 10^14 Read/Write Cycles Low-Power Operation 3.3V Supply and 40-Year Data Retention on sale
...RAM with Unlimited Endurance 150ns No-Write-Delay 1MHz I2C Interface 10^14 Read/Write Cycles Low-Power Operation 3.3V Supply and 40-Year Data Retention Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data Retention......
TOP Electronic Industry Co., Ltd.

Address: RM1441,GUO LI Bldg,ZhongHang RD.,Futian Dist.Shen Zhen,China

FM25V02-G Electronic IC Chips 256Kb Serial 3V F-RAM Memory

China FM25V02-G Electronic IC Chips 256Kb Serial 3V F-RAM Memory on sale
...3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

FM25V02-G Electronic IC Chips 256Kb Serial 3V F-RAM Memory

China FM25V02-G Electronic IC Chips 256Kb Serial 3V F-RAM Memory on sale
...3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion (1014) Read/Writes 10 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 40......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

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