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190a Power Mosfet 100v

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190a power mosfet 100v

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IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications

China IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications on sale
IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mandOmega; TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications andnbsp; Features Integrated Half-Bridge Package Reduces the Part......
TOP Electronic Industry Co., Ltd.

Address: RM1441,GUO LI Bldg,ZhongHang RD.,Futian Dist.Shen Zhen,China

High Power MOSFET RFP12N10L N-Channel Logic Level Power MOSFET 100V 12A 200mΩ

China High Power MOSFET RFP12N10L
 N-Channel Logic Level Power MOSFET 100V 12A 200mΩ
 on sale
High Power MOSFET RFP12N10L N-Channel Logic Level Power MOSFET 100V 12A 200mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......
Sunbeam Electronics (Hong Kong) Limited

Address: Internatinal Logistics Center A-702, No. 1 South China Road, ShenZhen, China

IC STP45N10F7 Chip N Channel Power Mosfets 100v 45A 0.013 OHM TYP

China IC STP45N10F7 Chip N Channel Power Mosfets 100v 45A 0.013 OHM TYP on sale
... Contact Us High Light: STP45N10F7 Integrated IC Chip , N Channel Power MOSFETs , 100V N channel Power MOSFETs STP45N10F7 MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for...
Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

IRFB7546PBF Power Mosfet 100V 50A N-Channel Low RDS(On) Through Hole

China IRFB7546PBF Power Mosfet 100V 50A N-Channel Low RDS(On) Through Hole on sale
...: 75V • Maximum Gate Source Voltage: 20V • Maximum Drain Current: 57A • Maximum Drain Source Resistance: 0.100ohm • Power Dissipation: 115W • Operating Temperature Range: -55°C to 175°C •...
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System

China JY11M N Channel Enhancement Mode Power MOSFET 100V/110A For Inverter System on sale
...Power MOSFET By incorporating advanced trench processing techniques, the JY11M accomplishes a remarkable cell density, concurrently minimizing on-resistance and boasting a high repetitive avalanche rating. The convergence of these attributes renders this design exceptionally efficient and dependable for power......
Changzhou Bextreme Shell Motor Technology Co.,Ltd

Address: No.8 Tianshan road, Xinbei district,Changzhou,Jiangsu,China.

STP45N10F7 Integrated IC Chip N Channel Power MOSFETs 100V 0.013 Ohm Typ 45A

China STP45N10F7 Integrated IC Chip N Channel Power MOSFETs 100V 0.013 Ohm Typ 45A on sale
...MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for high-voltage, high-current, high-speed switching and high-efficiency power conversion applications. The following are some application scenarios of the STP45N10F7 chip: Power management: The STP45N10F7 chip can be used in power management applications such as power switches, DC-DC converters, and power...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

China 100V 80A, 9mз  Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632 on sale
... and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82784 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures and VRMs • Primary Switch for 24V and 48V Systems •...
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

China P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free on sale
...100V 40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

FDMC86139P 4.4A 15A P Channel MOSFET 100V Moc Field Effect Tube

China FDMC86139P 4.4A 15A P Channel MOSFET 100V Moc Field Effect Tube on sale
...: Si Mounting Style: SMD/SMT Package / Case: Power-33-8 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Address: FLAT/RM D52 3/F WONG KING INDUSTRIAL BUILDING NO 2TAU=I YAU STREET

Transistor IPD068N10N3GATMA1 N-Channel Power MOSFET Surface Mount Type 100V 90A

China Transistor IPD068N10N3GATMA1 N-Channel Power MOSFET Surface Mount Type 100V 90A on sale
...Power MOSFET Surface Mount Type 100V 90A Product Description Of IPD068N10N3GATMA1 IPD068N10N3GATMA1 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Product Attributes Of IPD068N10N3GATMA1 Part Number IPD068N10N3GATMA1 FET Type N-Channel Technology MOSFET......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

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