FS2A THRU FS2M Dual Channel Mosfet Forward Current -2.0 Ampere
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FS2A THRU FS2M SURFACEMOUNTFASTRECOVERYRECTIFIER ReverseVoltage-50to1000VoltsForwardCurrent-2.0Ampere FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Fast Recovery Dual Channel Mosfet 250 C/10 Seconds At Terminals
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RS3A THRU RS3M SURFACE MOUNT FASTRE COVERY RECTIFIER FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Low reverse leakage Built-in strain relief,ideal for automated placement ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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FDMC6679AZ Dual-Channel N-Channel Enhancement Mode MOSFET Power Electronics for High Efficiency Applications
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FDMC6679AZ Dual-Channel N-Channel Enhancement Mode MOSFET Power Electronics for High Efficiency Applications Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 11.5A (Ta), 20A (Tc) Drive Voltage (Max ......
Shenzhen Sai Collie Technology Co., Ltd.
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High Power MOSFET FDS3890 80V N-Channel Dual PowerTrench® MOSFET 4.7A, 44mΩ
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High Power MOSFET FDS3890 80V N-Channel Dual PowerTrench® MOSFET 4.7A, 44mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......
Sunbeam Electronics (Hong Kong) Limited
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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
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...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Anterwell Technology Ltd.
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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET
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...MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
ChongMing Group (HK) Int'l Co., Ltd
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Dual Channel TPS22976DPUR 6A Load Drivers Chip 14WSON Integrated Circuit Chip
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... contains two N-channel MOSFETs that can operate over an input voltage range of 0.6 V to 5.7 V, and can support a maximum continuous current of 6 A per channel. Specification Of TPS22976DPUR Part Number TPS22976DPUR Switch Type General Purpose Number of...
ShenZhen Mingjiada Electronics Co.,Ltd.
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Integrated Circuit Chip ISL89411IBZ---High Speed, Dual Channel Power MOSFET Drivers
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Quick Detail: High Speed, Dual Channel Power MOSFET Drivers Specifications: Datasheets ISL89410-12 Product Photos 8-SOIC Standard Package 97 Category Integrated Circuits (ICs) Family PMIC - MOSFET, Bridge Drivers - External Switch Series - Packaging Tube ......
Mega Source Elec.Limited
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IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V
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...Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET......
Walton Electronics Co., Ltd.
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CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet
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CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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