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| Categories | Ceramic Substrate | 
|---|---|
| Brand Name: | ZMSH | 
| Model Number: | SiC Cantilever Paddle | 
| Certification: | rohs | 
| Place of Origin: | CHINA | 
| MOQ: | 25 | 
| Price: | by case | 
| Payment Terms: | T/T | 
| Delivery Time: | 2-4 weeks | 
| Packaging Details: | package in 100-grade cleaning room | 
| Material Purity: | SiC > 99.999% | 
| Coefficient of Thermal Expansion: | ~4.5×10⁻⁶/°C | 
| Mohs Hardness: | 9 | 
| Density: | 3.02 g/cm³ | 
| Surface Finish: | Ra < 0.1 μm | 
| Service Life: | 35 times longer than metal/quartz | 
| Company Info. | 
| SHANGHAI FAMOUS TRADE CO.,LTD | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 
SiC Cantilever Paddle with CVD Coating for Horizontal Boat Loading
A Silicon Carbide (SiC) Cantilever Paddle is a high-performance ceramic structural component manufactured using reaction-bonded silicon carbide (RBSiC) process. It is primarily designed for carrying and transporting wafers in high-temperature process environments within the semiconductor and photovoltaic industries. It operates reliably in atmospheres containing oxygen, nitrogen, and trace hydrogen chloride, withstanding temperatures of approximately 1250°C for long-term stable operation. Leveraging the exceptional material properties of silicon carbide—extremely high hardness, high flexural strength, low coefficient of thermal expansion, excellent thermal stability, and chemical inertness—the cantilever paddle ensures uniform heating, prevention of deformation, and reduction of contamination and particle generation in wafers under high temperatures. It significantly extends service life, increases load capacity and production efficiency, and reduces overall maintenance costs. Its lightweight design and high surface smoothness also support precise automated robotic handling, meeting high-precision process requirements.
The following are the core performance parameters of silicon carbide cantilever paddles, directly related to their material characteristics, functions, and applications:
| Parameter Category | Parameter Name | Typical Value/Range | 
| Material Characteristics | Material Purity | SiC > 99.999% | 
| Coefficient of Thermal Expansion | ~4.5×10⁻⁶/°C | |
| Flexural Strength | >2500 MPa | |
| Maximum Operating Temperature | 1350°C (long-term) | |
| Mohs Hardness | 9 | |
| Density | 3.02 g/cm³ | |
| Functional Characteristics | Surface Smoothness | High (specific value not provided) | 
| Corrosion Resistance | Resists acids, alkalis, and plasma erosion | |
| Application Characteristics | Working Atmosphere | Oxygen, nitrogen, hydrogen chloride, etc. | 
| Service Life | 35 times longer than metal/quartz | 
3D printing integrated forming.
Base material impurity content <300 ppm.
CVD silicon carbide coating base material impurity content <5 ppm.
High load-bearing capacity at high temperatures.
High thermal shock stability.
Photovoltaic Industry: Used in TOPCon cell production processes such as LPCVD and PECVD to carry silicon wafers for doping and passivation layer deposition. Also employed in diffusion furnaces for high-temperature oxidation and annealing of silicon wafers, enhancing cell conversion efficiency.
Q1: What is a silicon carbide cantilever paddle and what is it used for?
A1: A silicon carbide cantilever paddle is a high-performance ceramic component used primarily in semiconductor and photovoltaic manufacturing to carry and transport wafers in high-temperature processes like LPCVD and diffusion, ensuring precise handling and minimal contamination under extreme conditions (up to 1350°C).
Q2: Why choose silicon carbide for cantilever paddles over traditional materials?
A2: Silicon carbide offers exceptional thermal stability (low CTE ~4.5×10⁻⁶/℃), high hardness (Mohs 9), and mechanical strength (>2500 MPa), enabling longer service life (3-5x longer than quartz), reduced maintenance costs, and superior performance in corrosive and high-temperature environments.
Tags: #SiC Cantilever Paddle, #CVD Coating, #High-Purity,
#Customized, #SiC Ceramics, #Horizontal Boat Loading, #Wafer
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