Comprehensive Overview of 10×10mm Silicon Carbide (SiC) Substrate Chips

The 10×10mm Silicon Carbide (SiC) substrate chip is an advanced single-crystal semiconductor base material, engineered to support the demanding requirements of modern power electronics and optoelectronic devices. Known for its exceptional heat dissipation capability, wide electronic bandgap, and outstanding chemical robustness, the SiC substrate enables reliable operation of components in extreme conditions such as high temperature, high voltage, and high switching frequency environments. These square SiC chips, precisely cut to 10×10mm, are widely used in R&D labs, prototype development, and specialized device manufacturing.

Manufacturing Process of Silicon Carbide (SiC) Substrate Chips

Production of Silicon Carbide (SiC) substrates typically utilizes Physical Vapor Transport (PVT) or sublimation crystal growth technologies:

1. Raw Material Preparation: Ultra-pure SiC powders are placed inside a high-density graphite crucible.

2. Crystal Growth: Under a tightly controlled atmosphere and temperatures surpassing 2,000°C, the material sublimates and recondenses onto a seed crystal, producing a large single-crystal SiC boule with minimized defects.

3. Ingot Slicing: Diamond wire saws cut the bulk ingot into thin wafers or small chips.

4. Lapping & Grinding: Surface planarization eliminates slicing marks and ensures uniform thickness.

5. Chemical Mechanical Polishing (CMP): Produces a mirror-smooth surface suitable for epitaxial layer deposition.

6. Optional Doping: Introduction of nitrogen (n-type) or aluminum/boron (p-type) to adjust electrical characteristics.

7. Quality Assurance: Rigorous flatness, defect density, and thickness uniformity checks guarantee compliance with semiconductor standards.

Material Properties of Silicon Carbide (SiC)

Silicon Carbide substrates are primarily fabricated in 4H-SiC and 6H-SiC crystal structures:

• 4H-SiC: Exhibits higher electron mobility and superior performance for high-voltage power electronics such as MOSFETs and Schottky barrier diodes.

• 6H-SiC: Offers properties tailored for RF and microwave applications.

Key physical advantages include:

• Wide bandgap: ~3.2–3.3 eV, ensuring high breakdown voltage and efficiency in power switching devices.

• Thermal conductivity: 3.0–4.9 W/cm·K, delivering excellent heat dissipation.

• Mechanical strength: Hardness of ~9.2 Mohs, providing resistance to mechanical wear during processing.

Applications of 10×10mm Silicon Carbide Substrate Chips

• Power Electronics: Core material for high-efficiency MOSFETs, IGBTs, and Schottky diodes in EV powertrains, energy storage, and renewable energy converters.

• High-Frequency & RF Devices: Essential for radar systems, satellite communications, and 5G base stations.

• Optoelectronics: Suitable for ultraviolet LEDs, laser diodes, and photodetectors due to superior UV transparency.

• Aerospace & Defense: Enables operation of electronics in radiation-intensive and high-temperature conditions.

• Academic & Industrial Research: Perfect for new material characterization, prototype devices, and process development.

Technical Specifications

FAQ – Silicon Carbide (SiC) Substrate Chips

Q1: Why choose SiC substrates over traditional silicon?
SiC offers higher breakdown strength, superior thermal performance, and significantly lower switching losses, enabling devices to achieve greater efficiency and reliability than those built on silicon.

Q2: Can these substrates be provided with epitaxial layers?
Yes, epi-ready and custom epitaxy options are available for high-power, RF, or optoelectronic device requirements.

Q3: Do you offer customized dimensions or doping?
Absolutely. Custom sizes, doping profiles, and surface treatments are available to meet specific application needs.

Q4: How do SiC substrates perform under extreme operating conditions?
They maintain structural integrity and electrical stability at temperatures exceeding 600°C and in radiation-prone environments, making them indispensable in aerospace, defense, and high-power industrial sectors.