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| Categories | Infrared Photoelectric Sensor |
|---|---|
| Brand Name: | HAMAMATSU |
| Model Number: | S12053-10 |
| Place of Origin: | Japan |
| MOQ: | 1 |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 2200 |
| Delivery Time: | 3 days |
| Packaging Details: | piping |
| Dark current (Max.): | 5 nA |
| Cut-off frequency (typical value): | 900 MHz |
| Junction capacitance (typical): | 2 pF |
| Breakdown voltage (typical value): | 150V |
| Company Info. |
| ShenzhenYijiajie Electronic Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Product Description:
S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD
Features:
peculiarity
- High sensitivity and low noise in the UV to visible range
Type Short wavelength type
(Low bias operation)
Receiving surface φ0.2mm
Encapsulation metal
Package category TO-18
Maximum sensitivity wavelength (typical value) 620 nm
Sensitivity wavelength range 200 to 1000 nm
Photosensitivity (typical value) 0.42 A/W
Dark current (Max.) 5 nA
Cut-off frequency (typical value) 900 MHz
Junction capacitance (typical) 2 pF
Breakdown voltage (typical value) 150 V
Breakdown voltage temperature coefficient (typical value) 0.14 V/°C
Gain rate (typical value) 50
Measurement conditions Typical value Ta = 25°C, unless otherwise stated,
Sensitivity: λ = 620 nm, M = 1
Specifications:
| Reverse voltage (Max.) | 5 nA |
| Spectral response range | 200 to 1000 nm |
| Maximum sensitivity wavelength (typical value) | 620 nm |
| Gain rate (typical value) | 50 |

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