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| Categories | Infrared Photoelectric Sensor | 
|---|---|
| Brand Name: | HAMAMATSU | 
| Model Number: | S1337-21 | 
| Place of Origin: | Japan | 
| MOQ: | 1 | 
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram | 
| Supply Ability: | 2200 | 
| Delivery Time: | 3 days | 
| Packaging Details: | piping | 
| Receiving surface: | 18 × 18 mm | 
| Reverse voltage (Max.): | 5 V | 
| Sensitivity (typical value): | 0.52 A/W | 
| Dark current (Max.): | 500 pA | 
| Company Info. | 
| ShenzhenYijiajie Electronic Co., Ltd. | 
| Verified Supplier | 
| View Contact Details | 
| Product List | 
Product Description:
S1337-21 Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands
Features:
Receiving surface 18 × 18 mm
Encapsulated ceramics
Package category is not sealed
Package category is not sealed
Refrigeration uncooled type
Reverse voltage (Max.) 5 V
Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.52 A/W
Dark current (Max.) 500 pA
Rise time (typical value) 8 μs
Junction capacitance (typical) 4000 pF
Noise equivalent power (typical value) 2.5×10-14 W/Hz1/2
Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
| Spectral response range | 190 to 1100 nm | 
| Maximum sensitivity wavelength (typical value) | 960 nm | 
| Photosensitivity (typical value) | 0.52A /W | 
| Dark current (Max.) | 500 pA | 

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