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Categories | Infrared Photoelectric Sensor |
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Brand Name: | HAMAMATSU |
Model Number: | S2387-33R |
Place of Origin: | Japan |
MOQ: | 1 |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 2200 |
Delivery Time: | 3 days |
Packaging Details: | canning |
Expected Operating Life: | Two years in air |
Output Signal: | 1.70 ± 0.30 μA/ppm |
Resolution: | 0.1ppm |
Temperature Range: | -40°C to +50°C |
Company Info. |
ShenzhenYijiajie Electronic Co., Ltd. |
Verified Supplier |
View Contact Details |
Product List |
Product Description:
S2387-33R Silicon Photodiode Is Suitable For General Purpose Photometers In The Visible To Infrared Band
Features:
Four pixel silicon PIN photodiode
The S2387-66R is a four-pixel silicon PIN photodiode with sensitivity in the ultraviolet to near-infrared spectrum. The four-pixel format supports position sensing, for example for laser beam alignment.
peculiarity
- Four (2 × 2) pixel format
- Low crosstalk: maximum 2%
- Wide spectral response range: 190 to 1000 nm
- High-speed response: fc = 20 MHz
-TO-5 metal package
The number of pixels is 4 segments
Encapsulation metal
Package category TO-5
Refrigeration uncooled type
Sensitivity wavelength range 190 to 1000 nm
Maximum sensitivity wavelength (typical value) 720 nm
Photosensitivity (typical value) 0.45A /W
Dark current (Max.) 200 pA
Cut-off frequency (typical value) 20 MHz
Junction capacitance (typical) 25 pF
Measurement conditions Typical value Ta = 25°C, unless otherwise stated,
For each pixel (except the light-receiving surface), sensitivity: λ = λp, dark current: VR = 5V, cut-off frequency: VR = 5V, junction capacitance: VR = 5V, f = 1MHz
Specifications:
Photosensitivity (typical value) | 0.45A/W |
Dark current (Max.) | 200 pA |
Rise time (typical value) | 2μs |
Junction capacitance (typical value) | 25 pF |
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