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YJJ G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm

Categories Infrared Photoelectric Sensor
Brand Name: HAMAMATSU
Model Number: G12180-003A
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200
Delivery Time: 3 days
Packaging Details: piping
Dark current (Max.): 0.5 nA
Cut-off frequency (typical value): 600 MHz
Junction capacitance (typical): 5 pF
Number of pixels: 1
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YJJ G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm

Product Description:

G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm


Features:

Receiving surface: φ0.3mm

peculiarity

- Low noise, low dark current

- Low junction capacitance

- Receiving surface: φ0.3mm

- Low noise

Receiving surface φ0.3mm

Number of pixels 1

Encapsulation metal

Package category TO-18

Heat dissipation uncooled type

Sensitivity wavelength range 0.9 to 1.7 μm

Maximum sensitivity wavelength (typical value) 1.55 μm

Photosensitivity (typical value) 1.1 A/W

Dark current (Max.) 0.5 nA

Cut-off frequency (typical value) 600 MHz

Junction capacitance (typical) 5 pF

Noise equivalent power (typical value) 4.2×10-15 W/Hz1/2

Typical value of measurement conditions Tc = 25°C, unless otherwise stated, sensitivity: λ = λp, dark current: VR = 5V, cutoff frequency: VR = 5V, RL = 50Ω, -3 dB, junction capacitance: VR = 5V, f = 1MHz


Specifications:

Package categoryTO18
Sensitivity wavelength range0.9 to 1.7 μm
Maximum sensitivity wavelength (typical value)1.55 μm
Photosensitivity (typical value)1.1 A/W

Quality YJJ G12180-003A InGaAs PIN Photodiode Receiving Surface: φ0.3mm for sale
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