| Sign In | Join Free | My entremaqueros.com |
|
| Sign In | Join Free | My entremaqueros.com |
|
| Categories | Infrared Photoelectric Sensor |
|---|---|
| Model Number: | S1227-33BQ S1227-33BR |
| Place of Origin: | Japan |
| MOQ: | 1 |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 5000pcs |
| Delivery Time: | 3-5work days |
| Packaging Details: | Paper box |
| Light-receiving side: | 2.4 × 2.4 mm |
| encapsulation: | ceramics |
| refrigeration: | Non-cooled |
| Reverse voltage (max): | 5 V |
| Spectral response range: | 190 to 1000 nm |
| Light sensitivity (typical): | 0.36 A/W |
| Company Info. |
| ShenzhenYijiajie Electronic Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Silicon photodiodes S1227-33BQ
It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses infrared sensitivity
Features
- High UV sensitivity (quartz window type): QE = 75 % (λ = 200 nm)
- Suppressed IR sensitivity
- Low dark current
| Noise equivalent power (typical) | 2.5×10-15 W/Hz1/2 |
| Junction Capacitance (typical) | 160 pF |
| Rise Time (Typical) | 0.5 μs |
| Dark current (max) | 5 pA |
| Maximum Sensitivity Wavelength (Typical) | 720 nm |
Silicon photodiodes S1227-33BR
It is suitable for precise photometry in the ultraviolet to visible wavelength band; Suppresses infrared sensitivity
Features
- Resin potting
type - Suppression of infrared sensitivity
- Low dark current
| Light-receiving side | 2.4 × 2.4 mm |
| Reverse voltage (max) | 5 V |
| Spectral response range | 340 to 1000 nm |
| Light sensitivity (typical) | 0.43 A/W |
| Dark current (max) | 5 pA |
| Rise Time (Typical) | 0.5 μs |
|
YJJ Silicon PIN Photodiode S5821-01 S7509 S1133 S5106 S2386-44K S1223 S3071 S12742-254 High Performance High Reliability
YJJ G6854-01 InGaAs PIN Photodiode Spherical Lens Window Packaged
YJJ S1223 S1223-01 Silicon PIN Photodiode Is Used For Precise Photometric Determination In The Visible Light To Near-infrared Band
YJJ S16767-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band
YJJ S16765-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band
YJJ S16838-01MS Silicon Photodiode is Used in the Visible Light to Near-infrared Band
Visible to Infrared Band Silicon Photodiodes S16840-02MS with 0.3 A/W Photosensitive Sensitivity and 2.5 μs Rise Time
S16767-01MS Silicon Photodiode Low Dark Current For Visible Range Premolded Package
JSIR350-4-AL-R-D6 2.2 X 2.2mm2 Infrared Photoelectric Sensor With 0.65W Power Consumption And 141mA Operation Current
YJJ S4111-35Q Silicon Photodiode Array is Used in The Ultraviolet to Near-infrared Band
