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| Categories | Infrared Photoelectric Sensor |
|---|---|
| Model Number: | S1337-1010BR S1337-1010BQ |
| Place of Origin: | Japan |
| MOQ: | 1 |
| Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
| Supply Ability: | 5000pcs |
| Delivery Time: | 3-5work days |
| Packaging Details: | Paper box |
| Light-receiving side: | 10 × 10 mm |
| encapsulation: | ceramics |
| refrigeration: | Non-cooled |
| Reverse voltage (max): | 5 V |
| Spectral response range: | 190 to 1100 nm |
| Dark current (max): | 200 pA |
| Company Info. |
| ShenzhenYijiajie Electronic Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
Silicon photodiodes S1337-1010BQ
It is suitable for precise photometry in the ultraviolet to infrared band
Features
- High UV sensitivity: QE 75% (λ=200 nm)
- Low capacitance
| Maximum Sensitivity Wavelength (Typical) | 960 nm |
| Light sensitivity (typical) | 0.5 A/W |
| Rise Time (Typical) | 3 μs |
| Junction Capacitance (typical) | 1100 pF |
| Noise equivalent power (typical) | 1.8×10-14 W/Hz1/2 |
Silicon photodiodes S1337-1010BR
It is suitable for precise photometry in the ultraviolet to infrared band
Features
- Low capacitance
| Light-receiving side | 10 × 10 mm |
| encapsulation | ceramics |
| Spectral response range | 340 to 1100 nm |
| Maximum Sensitivity Wavelength (Typical) | 960 nm |
| Light sensitivity (typical) | 0.62 A/W |
| Dark current (max) | 200 pA |
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