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NVD5117PLT4G-VF01

Categories Semiconductor IC
Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature: -
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Rds On (Max) @ Id, Vgs: 16mOhm @ 29A, 10V
FET Type: P-Channel
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Product Status: Active
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Mounting Type: Surface Mount
Series: Automotive, AEC-Q101
Supplier Device Package: DPAK
Mfr: onsemi
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 61A (Tc)
Power Dissipation (Max): 4.1W (Ta), 118W (Tc)
Technology: MOSFET (Metal Oxide)
Base Product Number: NVD5117
Description: MOSFET P-CH 60V 11A/61A DPAK
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NVD5117PLT4G-VF01

P-Channel 60 V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK
Quality NVD5117PLT4G-VF01 for sale
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